BUSBAR calculation
Abstract: DHR-C10
Text: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output.
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DHR-C10
24VDC
BUSBAR calculation
DHR-C10
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11 kv vfd
Abstract: DHR-C10 lem module 50 DHR200C10 transducer 61326 single phase ac vfd lem 50 p DHR 100 C10 DHR300 DHR500
Text: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.
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DHR-C10
24VDC
11 kv vfd
DHR-C10
lem module 50
DHR200C10
transducer 61326
single phase ac vfd
lem 50 p
DHR 100 C10
DHR300
DHR500
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Untitled
Abstract: No abstract text available
Text: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 400 A
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DHR-C10
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Untitled
Abstract: No abstract text available
Text: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 1000 A
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DHR-C10
24VDC
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LEM L
Abstract: SCR single phase ac voltage controller IC DHR-C10 DHR500 lem module 50 scr phase angle controller k 4070
Text: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.
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DHR-C10
24VDC
LEM L
SCR single phase ac voltage controller IC
DHR-C10
DHR500
lem module 50
scr phase angle controller
k 4070
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BUSBAR calculation
Abstract: DHR-C10 lem module mm320
Text: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 1000 A
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DHR-C10
BUSBAR calculation
DHR-C10
lem module
mm320
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DHR-C10
Abstract: 11 kv vfd VFD WITH AC AND DC POWER
Text: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.
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DHR-C10
10anufacturer
24VDC
DHR-C10
11 kv vfd
VFD WITH AC AND DC POWER
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CH-1228
Abstract: capteur effet hall capteur hall ac current hall sensor signal conditioner lem ch-1228 DHR-C420 CAPTEUR A EFFET DE HALL C420 variable frequency drive precision 4-20ma current source
Text: Diagrams Diagram 1 Specifications DHR-C5/10 DHR-C420 Output Signal DHR DHR Output Connector 1 + 2(none) 3(out) 4(GND) 24 VDC Power Output Connector 1(+) 2(out) 3(none) 4(GND) Output Limit C10 and C420 (+) (-) (-) 10k (-) (+) (-) (+) Load Load (Controller, meter etc)
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DHR-C5/10
DHR-C420
0-10VDC
4-20mA
14VDC
150ms
20-50VDC
4-20mA
CH-1228
capteur effet hall
capteur hall
ac current hall sensor signal conditioner
lem ch-1228
DHR-C420
CAPTEUR A EFFET DE HALL
C420
variable frequency drive
precision 4-20ma current source
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Lem MODULE 1000A
Abstract: DHR-C420 ac current hall sensor signal conditioner C420 LEM sensor CURRENT travers motor lem courant series
Text: Diagrams Diagram 1 Specifications DHR-C420 DHR-C5/10 Output Signal DHR DHR Output Connector 1 Vcc 2(NC) 3(Vout) 4(GND) 24 VDC Power Output Connector 1(Vcc) 2(Iout) 3(NC) 4(GND) Output Limit C5 C10 C420 (-) 10k (-) (+) Load (Controller, meter etc) 7VDC 14VDC
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DHR-C420
DHR-C5/10
0-10VDC
4-20mA
14VDC
150ms
20-50VDC
4-20mA,
4-20mA
Lem MODULE 1000A
DHR-C420
ac current hall sensor signal conditioner
C420
LEM sensor CURRENT
travers motor
lem courant series
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HT 1200-4
Abstract: OZ 9972 B41DHR B65DHR B69DHR
Text: 8 7 5 6 4 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 1072 INITIAL RELEASE 06/23/2006 HT B 1479 CLARIFY TERMINATION TOLERANCE, TABULATED MATERIAL CALL-OUT & ADDED ALL POSITIONS 8/23/2007 VJ F F FIRST POSITION INDICATOR E D B A E E 2X .125 3.18 .050±.005 1.27±0.13
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C10764
Drawings\C10764,
HT 1200-4
OZ 9972
B41DHR
B65DHR
B69DHR
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Untitled
Abstract: No abstract text available
Text: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4
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TC514400J/Z
TC514400J/Zâ
l7240
T-46-23-18
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D41256
Abstract: 41256 ram 41256
Text: Y * ryÆ L W NEC Electronics Inc. PPD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The iiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256 ram
41256
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Untitled
Abstract: No abstract text available
Text: MOSEL VÊTEUC V53C665 64K x 16 BIT FAST PAGE MODE WRITE-PER-BIT CMOS DYNAMIC RAM V53C665 80 ns 100 ns Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c ) 55 ns 65 ns Min. Read/Write Cycle Time, (tRC)
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V53C665
V53C664
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Untitled
Abstract: No abstract text available
Text: nue 2 « SEC NEC Electronics Inc. JJPD424256 262,144 X 4-Bit Dynamic CMOS RAM July 1992 Description The¿/PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide
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JJPD424256
/PD424256
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PD41256
Abstract: JA-11
Text: ¡J PD41256 262,144 X 1-Bit Dynamic NMOS RAM rm W NEC Electronics Inc. Description The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel, silicon-gate process for high density, high performance,
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uPD41256
jiPD41256
144-word
JHPD412S6
PD41256
JA-11
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Untitled
Abstract: No abstract text available
Text: fiPD421002 1,048,576 X 1-Bit Dynamic CMOS RAM V NEC Electronics Inc. Description Pin Configurations The nPD421002 is a static-colum n dynamic RAM orga nized as 1,048,576 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced
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uPD421002
nPD421002
PPD421002
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d41464c
Abstract: NEC 41464c ud41464 41464c RAM
Text: NEC JUPD41464 65,536 X 4-Bit Dynamic NMOS RAM NEC Electronics Inc. Description Pin Configurations The /UPD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup ply and fabricated with a double polylayer, N-channel
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uPD41464
/UPD41464
536-word
PPD41464
JJPD41464
d41464c
NEC 41464c
ud41464
41464c RAM
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AS4C256K16F0-60JC
Abstract: 1j30 AS4C256K16F0 AS4C256K16F0-60 1J3000
Text: H ig h P e rfo rm a n c e 256K.X 16 CMOS DRAM H A S4C256K 16F0 A H ia h Speed 2 5 6 K X 1 6 CMOS DRAM F a st p a g e m ode Prelim inary information features • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I/O • JEDEC sta n d a rd packages
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AS4C256K16F0
4C256K16F0-50)
40-pin
40/44-pin
40-pin
AS4C256K16F0-S0JC
AS4C256K16F0-60JC
40/44-pin
AS4C256K16F0-50TC
l-30002-a.
AS4C256K16F0-60JC
1j30
AS4C256K16F0
AS4C256K16F0-60
1J3000
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Untitled
Abstract: No abstract text available
Text: H C R O N SEM ICONDUCTOR INC b7E D • blllS4'i ODOTÖMT T47 ■ URN PRELIMINARY M T4LC 4007J S " JM E Gx4 D R A M MICRON I s e » .c o m > u !:to i« c DRAM 1 MEG x 4 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • •
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4007J(
024-cycle
128ms
150jS
MT4LC4007J
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TM124EAD9C
Abstract: TM124EAD9B-6
Text: TM124EAD9B, TM124EAD9C 1 048 576-WORD BY 9-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULES SMMS191 — JANUARY 1991 This Data Sheet is Applicable to A ll TM124EAD9BS and TM124EAD9CS Symbolized with Revision "B" and Subsequent Revisions as Described on Page 6-44.
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TM124EAD9B,
TM124EAD9C
576-WORD
SMMS191
TM124EAD9BS
TM124EAD9CS
30-Pin
TM124EAD9B
TM124EAD9C
124EAD9B/C-6
TM124EAD9B-6
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23441 -xxBS10/DS10 IPirgílóMÍlrDsirf 4,194,304>Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory M odule composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with
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MSC23441
-xxBS10/DS10
40-Bit
MSC23441-xxBS10/DS10
304-word
16-Mb
MSM5116400)
72-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23136C/CL-xxBS10/PS10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE D E S C R IP T IO N The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in SOJ
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MSC23136C/CL-XXBS10/PS10
576-Word
36-Bit
MSC23136C/CL-xxBS10/DS10
72-pin
MSC23136C/CL-xxBS10:
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)
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36-Bit
18-Bit
361110/20S-60/-70/-80
18-bit)
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NEC D41464
Abstract: D41464 IPD41464 L-12
Text: JIPD41464 65,536 X 4-Bit Dynamic NMOS RAM F IH l NEC Electronics Inc. Description Pin Configurations The f i PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup ply and fabricated with a double polylayer, IM-channel
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uPD41464
PD41464
536-word
JUPD41464
ffPD41464
NEC D41464
D41464
IPD41464
L-12
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