fe 1.1s
Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low
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GM76C256B
55/70/E
GM76C256BL/BLL
450mil)
55/70/85ns
CS250
fe 1.1s
GM76C512
a 683 transister
GM76
GM76C5
cs25-02
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GM76C256
Abstract: GM76C256C
Text: GM76C256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6um advanced CMOS technology and operated a single 5.0V supply.
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GM76C256CL/LL
GM76C256C
GM76C256
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GM76C256B
Abstract: GM76C256BLL 22-VCS lg power supply diagram
Text: @ LG Semicon. Co. LTD Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/85ns. The device is placed in a low
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GM76C256B
55/70/85ns.
GM76C256BL/BLL
28-pin
600mil)
450mil)
55/70/85ns
55mWMax.
GM76C256BLL
22-VCS
lg power supply diagram
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GM76C256cll
Abstract: No abstract text available
Text: @ LG Semicon. Co., LTD Pin Configuration Description The GM76C256C is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. U sing a 0.8am advanced CMOS technology, it provides high speed operation with minimum cycle time o f 55/70/85ns. The device is placed in a low
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GM76C256C
55/70/85ns.
GM76C256CL/CLL
28-pin
600mil)
450mil)
55/70/85ns
55mWMax.
050ri
GDDLD30
GM76C256cll
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WRITE100
Abstract: No abstract text available
Text: m LG Semicon Co,Ltd, GM76C256CL/CLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256CL/CLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8wm advanced CMOS technology and operated from a single 2.7V to 5.5V supply.
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GM76C256CL/CLL-W
GM76C256CL/
28-pin
55/70ns
120ly
WRITE100
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2585Q
Abstract: No abstract text available
Text: GM76V256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76V256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech nology and operated a single 3.3V supply.
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GM76V256CL/LL
GM76V256C
2585Q
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7322130BMS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 2M x 8bit DRAMs in 28 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322130BMS/SG is
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GMM7322130BMS/SG
GMM7322130BMS/SG
GMM7322130BMS
GMM7322130BMSG
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Fin Configuration 32 DIP The GM23C8001B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation. It is designed to be suitable
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GM23C8001B
120ns.
120ns
402A7S7
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GM76C256C
Abstract: No abstract text available
Text: LG Semicon Co.,Ltd. GM76C256CL/LL 32,768 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech nology and operated a single 5.0V supply.
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GM76C256CL/LL
GM76C256C
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ci 740
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Fin Configuration 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000A
120/150ns.
ci 740
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PDF
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010DS/SG is
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GMM7321010DS/SG
7321010DS/SG
GMM7321010DS/SG
GMM7321010DS
GMM7321010DSG
111in
11111n
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7324200ANS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7324200ANS/SG is
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GMM7324200ANS/SG
GMM7324200ANS/SG
GMM7324200ANS
GMM7324200ANSG
1111111111111111111111l
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
D0Qb212
GMM7321000AN
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VM43217805B
Abstract: No abstract text available
Text: V M 23217805B ,V M 43217805B 2M ,4M x 32-B it Dynamic RAM Module_ VIS H D escription The VM23217805B and VM43217805B are 2M X 32-bit and 4M X 32-bit dynamic RAM modules. It is mounted with 4/8 pieces of 2M x 8 DRAM VG2617805B ,and each in a standard
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23217805B
43217805B
VM23217805B
VM43217805B
32-bit
VG2617805B)
VM23217800B
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23C4000
Abstract: ci 0804
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar
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GM23C4000A
120/150ns.
070-A18
402B757
0DD4775
23C4000
ci 0804
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C8000B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. The GM23C8000B offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000B
120ns.
120ns
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DNR2
Abstract: GE SG80 S1
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010ES/SG is an lM x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The G M M 7321010ES/SG is
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GMM7321010ES/SG
7321010ES/SG
GMM7321010ES/SG
GMM7321010ES
GMM732101OESG
40BB757
DNR2
GE SG80 S1
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GMM7324
Abstract: GMM73241 GMM7324100BNS
Text: @ LG Semicon. Co. LTD. Description Features The GMM7324100BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7324100BNS/SG is
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GMM7324100BNS/SG
GMM7324100BNS/SG
GMM7324100BNS
GMM73241OOBNSG
GMM7324
GMM73241
GMM7324100BNS
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321000CS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g
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GMM7321000CS/SG
7321000CS/SG
GMM7321000CS/SG
GMM7321000CS
-GMM7321000CSG
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GMM7322000B
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7322000BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322000BS/SG is optimized for
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GMM7322000BS/SG
GMM7322000BS/SG
GMM7322000BS
GMM7322000BSG
111111111111111111111111il
111111il
1111il
GMM7322000B
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TRF 840
Abstract: GMM7321100BSG
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321100BS/SG is an lM x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321100BS/SG is
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GMM7321100BS/SG
GMM7321100BS/SG
GMM7321100BS
GMM7321100BSG
QQQb34
TRF 840
GMM7321100BSG
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Untitled
Abstract: No abstract text available
Text: GM76U256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76U256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech nology and operated a single 3.0V supply.
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GM76U256C
GM76U256CL/LL
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GMM7322100B
Abstract: GMM7322100BSG
Text: @ LG Semicon. Co. LTD Description Features The GMM7322100BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322100BS/SG is optimized for
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GMM7322100BS/SG
GMM7322100BS/SG
GMM7322100BS
GMM7322100BSG
111II111111111111111111111111111111
11111111111111111111111111111111III
GMM7322100B
GMM7322100BSG
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
GMM7321000AN
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