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    DIFFERENCE BETWEEN CMOS A AND B SERIES Search Results

    DIFFERENCE BETWEEN CMOS A AND B SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIFFERENCE BETWEEN CMOS A AND B SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: S-5470 Series www.sii-ic.com ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.1_00 Seiko Instruments Inc., 2012 The S-5470 Series, developed by CMOS technology, is a photocurrent detection IC with an ultra-low current consumption. It detects 0.7 nA typ. photocurrent generated by an external photodiode PD or LED. It also has a function to detect the


    Original     		S-5470 PDF

    S-5470A21I

    Abstract: S5470 D1R100 s5470c21
    Text: S-5470 Series www.sii-ic.com ULTRA-LOW CURRENT CONSUMPTION PHOTOCURRENT DETECTION IC Rev.1.2_00 Seiko Instruments Inc., 2012 The S-5470 Series, developed by CMOS technology, is a photocurrent detection IC with an ultra-low current consumption. It detects 0.7 nA typ. photocurrent generated by an external photodiode PD or LED. It also has a function to detect the


    Original     		S-5470 S-5470A21I S5470 D1R100 s5470c21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-spectrometer TG series C9406GC, C9913GC, C9914GB For near IR, integrating optical system, image sensor and circuit HAMAMATSU TG series mini-spectrometers are polychromators integrated with optical elements and an image sensor. Light to be measured is guided into the entrance port of TG series through an optical fiber and the spectrum measured with the builtin image sensor is output from the USB port to a PC for data acquisition. Non-cooled type and cooled type are provided. Noncooled type is a palmtop-size unit and operates on USB bus power. Cooled type allows accurate measurement with low noise


    Original     		C9406GC, C9913GC, C9914GB C9913GC KACC1141E08 PDF

    Linear Image sensor IC

    Abstract: G9212-512S C7557 C8061-01 C8062-01 G9205 G9211 G9211-256S VREF256
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS


    Original     		G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E06 Linear Image sensor IC G9212-512S C7557 C8061-01 C8062-01 G9211-256S VREF256 PDF

    UB261

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UB261 Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC  DESCRIPTION The UTC UB261 is a series of lithium-ion/lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.


    Original     		UB261 UB261 OT-26 QW-R502-A27 PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		G9211 G9214 G9205 G9208 G9214/G9205 B1201, KMIR1011E11 PDF

    unbuffered cmos logic application note

    Abstract: cmos ic and gates datasheet cmos ic cd4001 BE Harris an6558 SCHA004 cmos ic cd4001 data sheet ic cd4001 datasheet 4011UB RCA CD4069UB applications 4046b
    Text: Application Report SCHA004 - October 2002 Understanding Buffered and Unbuffered CD4xxxB Series Device Characteristics R. E. Funk Standard Linear & Logic ABSTRACT Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from TI. Each product classification has application advantages in appropriate


    Original     		SCHA004 unbuffered cmos logic application note cmos ic and gates datasheet cmos ic cd4001 BE Harris an6558 cmos ic cd4001 data sheet ic cd4001 datasheet 4011UB RCA CD4069UB applications 4046b PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.


    Original     		G9201 G9204 SE-171 KMIR1012E07 PDF

    InGaAs photodiode array chip

    Abstract: InP Photonics G9201
    Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.


    Original     		G9201 G9204 SE-171 KMIR1012E06 InGaAs photodiode array chip InP Photonics PDF

    NPSF T1

    Abstract: NPSF T1 source 14 pin cmos IMAGE SENSOR G9204 C7557-01 C8061-01 G9201 G9201-256S G9202-512S G9203-256D
    Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register and a timing generator, along with an InGaAs photodiode array, and deliver high sensitivity and stable operation in the near infrared range.


    Original     		G9201 G9204 SE-171 KMIR1012E07 NPSF T1 NPSF T1 source 14 pin cmos IMAGE SENSOR C7557-01 C8061-01 G9201-256S G9202-512S G9203-256D PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9201 to G9204 series Image sensor for DWDM wavelength monitor The G9201 to G9204 series are InGaAs linear image sensors designed for WDM monitor detectors in optical communications. These linear image sensors contain a CMOS charge amplifier array, a CDS circuit, an offset compensation circuit, a shift register


    Original     		G9201 G9204 B1201, KMIR1012E08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-spectrometer TG series C11713CA C11714CA High resolution type spectral resolution: 0.3 nm The C11713CA and C11714CA are polychromators integrated with optical elements, an image sensor and a driver circuit. Light to be measured is guided into the entrance port of TG series through an optical fiber and the spectrum measured with


    Original     		C11713CA C11714CA C11713CA C11714CA SE-171 KACC1186E02 PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-spectrometer C11007MA C11009MA RC series C11008MA C11010MA Compact and low cost C11009MA, C11010MA: for installation into measurement equipment HAMAMATSU mini-spectrometer RC series is a family of compact polychromators integrated with a reflection grating and a


    Original     		C11007MA C11009MA C11008MA C11010MA C11009MA, C11010MA: C11007MA, C11008MA) C11010MA) PDF

    Untitled

    Abstract: No abstract text available
    Text: Mini-spectrometers MS series C10988MA-01 C11708MA Ultra-compact mini-spectrometer integrating MEMS and image sensor technologies The MS series are thumb-sized 27.6 x 16.8 × 13 mm spectrometer heads developed for installation into mobile measurement equipment by merging our MEMS and image sensor technologies.


    Original     		C10988MA-01 C11708MA KACC1169E07 PDF

    Untitled

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an


    Original     		G9211 G9214 G9205 G9208 G9214/G9205 KMIR1011E08 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UB211C Preliminary CMOS IC 1 -CELL LI T H I U M -I ON /POLY M ER BAT T ERY PROT ECT I ON I C ̈ DESCRI PT I ON UTC UB211C is a series of lithium-ion / lithium-polymer rechargeable battery protection ICs incorporating high accuracy


    Original     		UB211C UB211C QW-R502-482 PDF

    G9205

    Abstract: No abstract text available
    Text: InGaAs linear image sensors G9211 to G9214 series G9205 to G9208 series Near infrared image sensors 0.9 to 1.67 m / 2.55 μm The G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS


    Original     		G9211 G9214 G9205 G9208 G9214/G9205 SE-171 KMIR1011E07 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UB211C Preliminary CMOS IC 1-CELL LITHIUM-ION/POLYMER BATTERY PROTECTION IC „ DESCRIPTION UTC UB211C is a series of lithium-ion / lithium-polymer rechargeable battery protection ICs incorporating high accuracy voltage detection circuits and delay circuits.


    Original     		UB211C UB211C QW-R502-482 PDF

    S-5816A

    Abstract: S-5815A S-5815A-H4T1 S-5816A-H4T1
    Text: Rev.1.1_01 S-5815A/5816A Series CMOS TEMPERATURE SENSOR IC The S-5815A/5816A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current


    Original     		S-5815A/5816A S-5816A S-5815A S-5815A-H4T1 S-5816A-H4T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev.1.1_00 S-5815A/5816A Series CMOS TEMPERATURE SENSOR IC The S-5815A/5816A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current


    Original     		S-5815A/5816A PDF

    5814A

    Abstract: S-5813A S-5813A-I4T1G S-5814A S-5814A-I4T1G S581
    Text: Rev.1.2_00 S-5813A/5814A Series CMOS TEMPERATURE SENSOR IC The S-5813A/5814A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current


    Original     		S-5813A/5814A 5814A S-5813A S-5813A-I4T1G S-5814A S-5814A-I4T1G S581 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev.1.1_00 S-5813A/5814A Series CMOS TEMPERATURE SENSOR IC The S-5813A/5814A Series is a family of high-precision temperature sensor ICs on a single chip with a linear output voltage for temperature changes. Each chip is composed of a temperature sensor, a constant current


    Original     		S-5813A/5814A PDF

    Difference between LS, HC, HCT devices

    Abstract: TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04
    Text: C2MOS Logic TC74HC/HCT Series 9. Precautions in Designing Circuits 9-1 Input Processing 1 Processing of unused gate Inputs of CMOS IC have such a high impedance that the logic level becomes undefined under open conditions. If the input is at an intermediate level, the P-channel and Nchannel transistors both turn on, and excessive supply


    OCR Scan     		TC74HC/HCT TC74HC08 TC7S32F TC74HC32 TC7S02F TC7SU04F TC74HCU04 TC7S00F TC7S04F TC74HC00 Difference between LS, HC, HCT devices TC4S69F Small Signal Zener Diod difference between 74ls and 74hc ic TC74HC04 PDF

    applications 4046b

    Abstract: unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB
    Text: ICAN-6558 Understanding Buffered and Unbuffered CMOS Characteristics by R. E. Funk INTRODUCTION Both buffered and unbuffered CMOS B-series gates, inverters, and high-current IC products are available from RCA; each pro­ duct classification has application advantages


    OCR Scan     		ICAN-6558 CD4000B CD400IB CD4002B CD4010B CD401IB CD4012B CD4023B CD4025B CD4050B applications 4046b unbuffered cmos logic application note 4001UB UNBUFFERED-CD400IUB RCA CD4069UB CD4001* using NAND gates 4011UB CD4007 ICAN-6558 CD4002UB PDF