Q62702-U112
Abstract: BUY35 Q62901-B50 35F0
Text: BUY 35 NPN Silicon power transistor P re lim in a ry data BUY 35 is a single-diffused NPN silicon power transistor in a case 3 A 2 DIN 41872 TO-3 . The transistor is particularly suitable for use as switch at higher voltages. Type BUY 35 Mica disc Insulating
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Q62702-U
Q62901
Q62901-B50
BUY35
Q62702-U112
BUY35
Q62901-B50
35F0
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u269
Abstract: U265 BUW74 ic 74 76 u267 BUW75 BUW76 BUW77 Q62901-B11-A 5X-120
Text: NPIM-Silizium-Leistungstransistoren BUW 74 BU W 75 - BUW 77 Vorläufige Daten B U W 74, B U W 75, B U W 76 und B U W 77 sind NPN-Silizium-Leistungstransistoren in Dreifachdiffusions-Technikim Gehäuse 3 A2 DIN 41872 T O -3 . Der Kollektor ist mit dem Gehäuse
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BUW75
BUW74,
BUW75,
BUW76
BUW77
Q62702-U265
Q62702-U266
Q62702-U267
Q62702-U269
Q62901-B11-A
u269
U265
BUW74
ic 74 76
u267
BUW75
5X-120
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3055 transistor
Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
B--01
fl23Sb05
A23SbDS
B--03
3055 transistor
2N3055
M 3055 power transistor
transistor 3055
e 3055 t
3055 npn
power transistor 3055
on 3055
j 3055
power transistor IN 3055
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5B05
Abstract: 62901-B11-A buw70
Text: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 SIEMENS AKTIEN6ESELLSCHAF BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high
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235b05
BUW71
62702-U
62901-B11-A
62901-B50
5B05
buw70
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U296
Abstract: BUW71 Q62702-U297 BUW72 BUW70 D-12 Q62702-U295 Q62901-B11-A Q62901-B50 fl23SbQS
Text: 2SC D • Û235b05 G0D4Ö52 â BiSIEû NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF BUW 70 BUW71 BUW 72 P T ~ 3 3 -/3 BUW 71, BUW 72, and BUW 73 are triple diffused silicon NPN power switching transistors in TO 3 case 3 A 2 DIN 41872 . They are outstanding for short switching times and high
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BUW71
Q62702-U295
62702-U296
Q62702-U297
Q62901-B11-A
Q62901-B50
U296
Q62702-U297
BUW72
BUW70
D-12
Q62702-U295
Q62901-B11-A
Q62901-B50
fl23SbQS
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bu 515
Abstract: BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208
Text: . 2SC D • Ö235b05 QQQMÖ4Q ! ■ ISIEG BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF V84Ö v ~ r - 3 3 - < n BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high
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0235bQS
Q68000-A494
Q68000-A5163
bu 515
BU208A
Q68000-A494
Q68000-A5163
T-25
PICTURE TUBE
BU 110
BU208
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3055 transistor
Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
005ms
aa35b05
3055 transistor
transistor 3055
3055
2N3055
2SC 2276
M 3055 power transistor
n3055
2N3066
power transistor 3055
33S3
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BDY39
Abstract: TRANSISTOR L 287 A TCA 290 BDY39-4 BDY39-6 Q62901-B11-A Q62901-B50
Text: BDY39 NPN Transistor for high-power AF output stages The BD Y 39 is a single diffused NPN silicon transistor in a case 3 A 2 DIN 41872 sim. TO -3 . The collector is electrically connected to the case. The transistor is especially designed for use in high-power A F output stages and in stabilized power
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BDY39
BDY39
2602-D
62702-D
TRANSISTOR L 287 A
TCA 290
BDY39-4
BDY39-6
Q62901-B11-A
Q62901-B50
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BU 103 t transistor
Abstract: DIN 41872 BU 103 A transistor 2U25
Text: 55C D fl535b05 0004ÔSM 1 « S I E G , • T-33-29 NPN Silicon Darlington Power Transistor BU X 28 Not for new design - SIEMENS AKTIEN6ESELLSCHAF -BU X 28 is a triple diffused monolithic NPN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between
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fl535b05
T-33-29
a23SbOS
00Q4fl5b
BUX28
H--01
BU 103 t transistor
DIN 41872
BU 103 A transistor
2U25
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AUY 10
Abstract: AUY19 legiert Q62901-B11-A pnptransistor W130 AUY20V PNP-Germanium
Text: PNP-Transistoren für Schalteranw endungen bis 3 A A U Y 19 A U Y 20 A U Y 19, A U Y 20 sind legierte PNP-Germanium-Transistoren im Gehäuse 3 A 2 DIN 41872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die Transistoren sind besonders für den Einsatz als NF-Leistungsschalter geeignet.
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Q62901-B11-A
Q62901-B13-B
Q60120-Y19-C
Q62901-B13-B
Q60120-Y19-D
Q62901-B11-A
AUY19
Q60120-Y19-E
Q60120-Y20-C
Q60120-Y20-D
AUY 10
legiert
pnptransistor
W130
AUY20V
PNP-Germanium
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aim 65
Abstract: Q68000-A4984
Text: 2SC D • 0235bGS GDOMflHi A WÊSI EG NPN Silicon Power Transistor SIEMENS AKTIEN GE SE LL SC HA F BU 626 A - Q 'T '- 3 3 - / 3 BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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0235bGS
Q68000-A4984
fi235bOS
BU626A
D--10
aim 65
Q68000-A4984
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BUX81
Abstract: CER500 BUX80 Q62901-B50 Q68000-A4634 Q68000-A4675 siemens afe circuit diagram t335
Text: 2SC D Bi 023SbOS OOGMÖS? 7 » S I E G T- 1 1 - /3 NPN Silicon Power Transistors BUX 80 BUX 81 -SIEMENS AKTIENGESELLSCHAF- BUX 80 and BUX 81 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors
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S23SbOS
Q68000-A4634
Q68000-A4675
Q62901-B11
Q62901-B50
BUX81
23SfeiQ5
BUX80
trs30ns
CER500
siemens afe circuit diagram
t335
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BUY57
Abstract: BUY58 Q62702 U110
Text: BUY 57, BUY 58, BUY 73 NPN Triple-diffused silicon power transistors Preliminary data BUY 57, BUY 58 and BUY 73 are triple-diffused NF’ N silicon power transistors in a case sim. to 3 A 2 DIN 41872 TO-3 . The collector is electrically connected to the case. The transistors are particularly suitable for use as power switches for high
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Q62702-
Q62702
Q62901
Q62901-
Dimensio20V
BUY57,
BUY58
100mA
BUY57
BUY58
U110
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bu 2225
Abstract: BU208A BU 102
Text: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high
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023SbQS
8000-A
fl23Sb05
bu 2225
BU208A
BU 102
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Untitled
Abstract: No abstract text available
Text: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors
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023SbG5
05-KO
BUX83
23SbOS
BUX82
023Sb
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bux diode
Abstract: BUX28 Q62702-U258 Q62901-B11-A Q62901-B50 siemens power transistor bux c T3329 22-16 diode
Text: ESC D • 0235bOS QQQ4ÔS4 1 ■ S I E 6 , T-33-29 NPN Silicon Darlington Power Transistor BUX28 Not for new d e sign - SIEMENS AKTIEN6ESELLSCHAF B U X 2 8 is a triple diffused monolithic N PN dariington power transistor in TO 3 case 3 A 2 DIN 41872 . The collector is electrically connected to the case. The resistor between
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fl235bOS
0004fiSM
T-33-29
BUX28
Q62702-U258
Q62901-B11-A
Q62901-B50
fl235b05
D004fi5b
T-33-29
bux diode
BUX28
Q62702-U258
Q62901-B11-A
Q62901-B50
siemens power transistor
bux c
T3329
22-16 diode
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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transistor tt 2206
Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Text: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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Q62702-U268
0t304
transistor tt 2206
TT 2206 transistor
transistor BU 102
t 326 Transistor
transistor npn 326
BU326
W2206
326 Transistor
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A751
Abstract: DIN 41872 BU205
Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is
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fl23SbOS
68000-A751
C--12
A751
DIN 41872
BU205
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transistor 626
Abstract: BU626A transistor d 2213 Q68000-A4984
Text: 2SC D • 02 35b G S GDOMflHi S IE Û & BU 626 A NPN Silicon Power Transistor '-3 3 -/ 3 SIEM EN S A K T IE N G E S E L L S C H A F BU 626 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is
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0235bGS
Q68000-A4984
fi235bOS
transistor 626
BU626A
transistor d 2213
Q68000-A4984
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Q68000-A751
Abstract: TO115 BU205
Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor SIEMENS BU 205 A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is
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fl23SbOS
AKTIENGESELLSCHAFD4838
Q68000-A751
Q68000-A751
TO115
BU205
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to-220 weight
Abstract: "high voltage linear regulator" bu508a bu508 BU908 s630t DIN 41872 JEDEC TO-220
Text: TELEFUNKEN ELECTRONIC_61C D • 6 3 5 0 0 ^ 0005bMM 3 M A L 6 G J - £ 2 - O J Horizontal Deflection Transistors T EL E F U N K E N electronic provides horizontal deflection transistors in both the high voltage T O 3 large eyelet hermetic package and in the high voltage epoxy package. Our basic
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0005bMM
to-220 weight
"high voltage linear regulator"
bu508a
bu508
BU908
s630t
DIN 41872
JEDEC TO-220
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BF872S
Abstract: transistors bf 423
Text: TELEFUNKEN ELECTRONIC T> Ö1C X ' 2 3~&l ò 'ìaotn b DDQSbMS 5 H A L 6 6 Video and Auto Ignition Transistors Video Transistors and Auto Ignition Transistors fill in the application gaps between the high voltage, high speed, low gain switches and the more conventional low voltage, high
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BUV93
Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated
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OOOSb43
-Wt--214-
BUV93
TU F 13003
BUV95
to-220 weight
X 13003
13002 TO-92
13003 TO-92
13007
TE13002
13003
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