16F100
Abstract: 16F120 16F20 16F40 16F60 16F80 16FR120 16FR20 16FR40 16FR80
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-147-15 16F100 diod 1000V 16A 70-147-23 16F120 diod 1200V 16A 70-147-56 16F20 diod 200V 16A 70-147-64 16F80 diod 800V 16A
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16F100
16F120
16F20
16F80
16FR120
16FR20
16FR40
16F40
16F60
16FR80
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25F80
Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V
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25F10
25F100
25F120
25F20
25F40
25F60
25F80
25FR10
25FR100
25FR120
P 1000V diod
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40HFR100
Abstract: 40HF120 Diode 40HF120 40HF10 40HF100 40HF160 40HF40 40HF60 40HF80 40HFR10
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-363-95 40HF10 diod 100V 40A 70-364-03 40HF100 diod 1000V 40A 70-364-11 40HF120 diod 1200V 40A 70-364-29 40HF160 diod 1600V 40A
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40HF10
40HF100
40HF120
40HF160
40HF40
40HF60
40HF80
40HFR10
40HFR100
40HFR120
Diode 40HF120
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12F10
Abstract: 12F100 12F120 12F20 12F40 12F60 12F80 12FR100 12FR120 12FR60
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-145-58 12F10 diod 100V 12A 70-145-66 12F100 diod 1000V 12A 70-145-74 12F120 diod 1200V 12A 70-145-82 12F20 diod 200V 12A
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12F10
12F100
12F120
12F20
12F60
12F80
12FR100
12F40
12FR120
12FR60
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p j 85 diod
Abstract: 85HF120 85HF160 85HF20 85HF40 85HF60 85HF80 85HFR120 85HFR20 85HFR40
Text: 2002-07-05 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-366-92 85HF120 diod 1200V 85A 70-367-00 85HF160 diod 1600V 85A 70-367-18 85HF20 diod 200V 85A 70-367-26 85HF40 diod 400V 85A
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85HF120
85HF160
85HF20
85HF40
85HF60
85HF80
85HFR120
85HFR20
85HFR40
85HFR60
p j 85 diod
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70HF100
Abstract: 70HF120 70HF140 70HF160 70HF20 70HF40 70HF80 70HFR10 70HFR100 70HFR140
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-365-36 70HF100 diod 1000V 70A 70-365-44 70HF120 diod 1200V 70A 70-365-50 70HF140 diod 1400V 70A 70-365-69 70HF160 diod 1600V 70A
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70HF100
70HF120
70HF140
70HF160
70HF20
70HF40
70HF80
70HFR10
70HFR100
70HFR140
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Untitled
Abstract: No abstract text available
Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode
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CAS100H12AM1
CAS100H12AM1
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ROHM BP5053-12 circuit diagrams
Abstract: BP5053-12 CMF01 311VDC
Text: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C
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BP5053-12
25MAX.
55MAX.
250mA
ROHM BP5053-12 circuit diagrams
BP5053-12
CMF01
311VDC
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BP5053-12
Abstract: ROHM BP5053-12 circuit diagrams TOSHIBA DIODE CATALOG TOP MARKING C1 ROHM ZNR 20 CMF01 diod 20a 600v rectifier diod 250 A ZNR Power
Text: BP5053-12 Non-isolated AC/DC converter Dimensions Unit : mm Absolute Maximum Ratings Conditions DC Refer to derating curve Ambient temperature + the module self-heating Tcmax PEAK value of current C mA 10.1MAX. 28.2MAX. Marking Side Marking Side Unit V C
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BP5053-12
25MAX.
55MAX.
250mA
BP5053-12
ROHM BP5053-12 circuit diagrams
TOSHIBA DIODE CATALOG
TOP MARKING C1 ROHM
ZNR 20
CMF01
diod 20a 600v
rectifier diod 250 A
ZNR Power
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Triac 12F
Abstract: irkt 40 thyristor silicon WAFER chips 31017 triac 1200V 21PT 36MB-A 40HF 70HF 85HF
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0 h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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T-63-65"
TRIAC210-.
TRIAC350-.
FD150-.
FD210-.
FD280-.
FD350-.
IRCI210-.
IRCI230-.
IRCI350-.
Triac 12F
irkt 40
thyristor silicon WAFER chips
31017
triac 1200V
21PT
36MB-A
40HF
70HF
85HF
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Untitled
Abstract: No abstract text available
Text: MICRO QUALITY / DIB SEM IC O N D U C TO R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes Standard .1 0 "— 2,54M M Dip Lead Spacing
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Untitled
Abstract: No abstract text available
Text: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current
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Untitled
Abstract: No abstract text available
Text: SSH8N80A A d vanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA Max @ VM = 800V Low Rq^ oh) : 1,000 £2 (Typ.)
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SSH8N80A
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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se 617
Abstract: No abstract text available
Text: UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE Features • • • • Voltage ratings to 1000V UM7000 W ide variety of packag e sty le s Rated average pow er d issip a tio n to 10W C o st effe ctive in volum e a p p lic a tio n s Description The UM 7000 and UM7100 se rie s o ffe r m od
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UM7000
UM7100
UM7200
UM7000)
l00voUs|
se 617
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BYT261
Abstract: bty261 BYT260PI DDLQ337
Text: 7 S C S -T H O M S O N MO^s IL[i ï[iMQ gS BYT260PI(V)-800 BYT261 PI(V)-800 FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TU RN -O FF SW ITCHING INSULATED P A C K A G E : Insulating voltage = 2500 V r m s
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BYT260PI
BYT261
BTY261
BTY260PI
100oC]
DDLQ337
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UM7108
Abstract: M7002 UM1000 UM7108 digit um7000 UM7006 UM7001 UM7100 UM7101 UM7102
Text: UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE Features • • • • Voltage ratings to 1000V UM7000 W ide variety of packag e sty le s Rated average pow er d issip a tio n to 10W C o st effe ctive in volum e a p p lic a tio n s Description The UM 7000 and UM7100 se rie s o ffe r m od
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UM7000
UM7100
UM7200
UM7000)
UM7100
UMl70tpilcl
UM7108
M7002
UM1000
UM7108 digit
UM7006
UM7001
UM7101
UM7102
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diode bridge LT 402
Abstract: Mitsubishi Electric IGBT MODULES
Text: MITSUBISHI IGBT MODULES CM100TF-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of six IGBTs in a three phase bridge configuration, w ith each tran sistor
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CM100TF-28H
diode bridge LT 402
Mitsubishi Electric IGBT MODULES
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ration w ith each tra n s is to r having
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CM50DY-28H
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Untitled
Abstract: No abstract text available
Text: m CM100DY-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD H-Series Module 100 Amperes/1400 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists
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CM100DY-28H
Amperes/1400
135ns)
20-25kHz)
Basep01
peres/1400
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diod m4
Abstract: diode LT 42
Text: MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a pp lica tions. Each m odule consists of one IGBT in a single configuration with a reverse-connected su pe r-fa st re
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CM400HA-28H
-800A
diod m4
diode LT 42
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tra 103
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ration w ith each tra n s is to r having a
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CM200DY-28H
tra 103
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE I Description: M itsubishi IGBT M odules are de signed fo r use in sw itching a p p li cations. Each m odule consists of tw o IGBTs in a half-bridge co nfig u ration w ith each tra n s is to r having
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CM75DY-28H
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