Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIOD BRIDGE Search Results

    DIOD BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIOD BRIDGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diod Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode


    Original
    CAS100H12AM1 CAS100H12AM1 PDF

    SWITCHING TRANSISTOR C144

    Abstract: transistor c144 C144 TRANSISTOR RESISTOR C144 TRANSISTOR SWITCHING TRANSISTOR C145 LDO PCB Layout Guidelines C144 ESR c144 fet AN1989 Meggitt CGS
    Text: Freescale Semiconductor, Inc. Application Note AN1989 Rev 0, 03/2004 Freescale Semiconductor, Inc. MC3371 and MC33702 Components Selection Guidelines by: Monirat Ung, System Engineer Transportation and Standard Products Group Toulouse, France Abstract MC33701and MC33702 devices are 2 cost effective DC/DC converter solutions


    Original
    AN1989 MC3371 MC33702 MC33701and MC33702 SWITCHING TRANSISTOR C144 transistor c144 C144 TRANSISTOR RESISTOR C144 TRANSISTOR SWITCHING TRANSISTOR C145 LDO PCB Layout Guidelines C144 ESR c144 fet AN1989 Meggitt CGS PDF

    VD42

    Abstract: No abstract text available
    Text: CD42_ _90 _ CD47 90_ / owerex, Inc., 200 Hillls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diodß POW-R-BLOK Module 90 Amperes/1600 Volts TO CD42_ _90, CD47_ _90 SCR/Diode POW-R-BLOK™ Module


    OCR Scan
    Amperes/1600 VD42 PDF

    500mA H-bridge

    Abstract: CS-3710M15
    Text: CS-3710 0.5A Fully Protected Dual H-Bridge Driver D escription The CS-3710 is a smart dual 0.5A Hbridge driver u sed in microprocessor controlled stepper motor system s. The CS-3710 provides bidirectional current using tw o independent 0.5A H -bridge drivers. On chip com m utation diod es


    OCR Scan
    CS-3710 00Q35TD CS-3710M15 50b755b 500mA H-bridge PDF

    dioda bridge

    Abstract: No abstract text available
    Text: CM4208A2 Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diodß POW-R-BLOK Modules 25 Amperes/800 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and


    OCR Scan
    CM4208A2 Amperes/800 MAX/10 dioda bridge PDF

    HA 2800

    Abstract: No abstract text available
    Text: S IE M E N S BSM 150 GB 100 D IGBT Module Preliminary Data VCE = 1000 V /c =2x150 A • • • • • Power m odule H alf-bridge Inclu ding fast free-w heel diod es Package with insulated metal base plate C icruit diagram : Fig. 5 a ' Type Ordering code


    OCR Scan
    2x150 7076-A 102-A HA 2800 PDF

    BSM50GB100D

    Abstract: BSM50GB100 50GB100D 50GB 100D
    Text: SIEMENS BSM 50 GB 100 D IGBT Module Preliminary Data VCE = 1000 V /c =2x50 A • • • • • Power m odule H alf-bridge Including fast free-w heel diod es Package with insulated m etal base plate C ircuit diagram : Fig . 2 b 1 Type Ordering code BSM 5 0 G B 100D


    OCR Scan
    7076-A 100-A BSM50GB100D BSM50GB100 50GB100D 50GB 100D PDF

    Untitled

    Abstract: No abstract text available
    Text: S I E ME NS IG B T M o d u le BSM 2 5 G B 100 D Preliminary Data VCB = 1000 V /c =2x25 A • • • • • Power m odule H alf-bridge Including fast free-w heel diod es Package with insulated metal base plate C ircuit diagram : Fig. 2 b ' Type Ordering code


    OCR Scan
    7076-A PDF

    D3SBA60

    Abstract: No abstract text available
    Text: -7u?ÿ*r*-K 5 W- f Bridge Diod& •' - S in g le In -lin e P a c k a g e ^ O U T L IN E D IM E N S IO N S D3SBAD fife • 7 7 X g ^ W Type No., Class p-y ^ 6 ±w ' Date code t*^*| .6I0J~ 25±OJ 600V 4A C3 y 03SBA 60 es : + - 9 - ~ 2.7t0-* <B © QJtoi


    OCR Scan
    03SBA 50HziE D3SBA60 D3SBA20 D3SBA60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Property http://semicon.sanyo. com/en/search/property.php?clcd=149&prod=DBA250G SANYO Semiconductor Co., Ltd. S A \Y O Rectifying Diodes—Single-Phase Bridge Rectifying Diodes □ sp lay a list Discret e Devices Prod uct Information Type No. DBA250G Category


    OCR Scan
    DBA250G DBA250G 9/23/2010ttp PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRO QUALITY / DIB SEM IC O N D U C TO R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery VM-X Series For Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current Glass Passivated Diodes Standard .1 0 "— 2,54M M Dip Lead Spacing


    OCR Scan
    PDF

    1N5829

    Abstract: No abstract text available
    Text: 1N5829,1N5830 1N5831 MBR5831H, HI gl MOTOROLA l t ‘w i{ ïin « r s D a t a S h e e t H O T C A R R IE R P O W E R R E C T IF IE R S S C H O T T K Y B A R R IE R R E C T IF IE R S . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e area m e ta lto -s ih c o n p o w e r diod e. S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l


    OCR Scan
    BR5831 1N5829 PDF

    36-16n08

    Abstract: No abstract text available
    Text: □ IX Y S VBO 36 Single Phase Rectifier Bridge V RSM V 1200 1400 1600 1800 V RRM 1200 1400 1600 1800 VBO VBO VBO VBO 36-12N08 36-14N08 36-16N08 36-18N08 ^dAVM Tc = 85°C , m odule Tc = 62°C , m odule Maximum Ratings 550 600 A A T"vj = Tvjm V R= 0 t = 10 ms 50 Hz , sine


    OCR Scan
    36-12N08 36-14N08 36-16N08 36-18N08 36-16n08 PDF

    Untitled

    Abstract: No abstract text available
    Text: M ICRO Q U A L IT Y / 1 /lD S E M IC O N D U C T O R , INC. .8 Amp Dual In-Line Bridge, Fast Recovery, Surface Mount T \T T l For Surface Mount, Fast Recovery Applications 50V, 100V, 200V, 400V, 600V and 800V V RRM Ratings 25 Amps Peak One Half Cycle Surge Current


    OCR Scan
    PDF

    APPLICATION NOTES IGBT

    Abstract: 4101 transistor 25CC
    Text: 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID T k J g ^ f a a f\ 4 4 1 U I M.S. KENNEDY CORP. 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • 600V, 50 Amp Capability • Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W


    OCR Scan
    S134300 4101B Mil-H-38534 APPLICATION NOTES IGBT 4101 transistor 25CC PDF

    jantx diodes

    Abstract: 4833
    Text: RECTIFIER ASSEMBLIES JANTX 483-1 JANTX 483-2 JANTX 483-3 Three Phase Bridges, 25 Amp, Military Approved FEATURES D E S C R IPT IO N • • • • • • • This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type


    OCR Scan
    MIL-S-19500/483 jantx diodes 4833 PDF

    Untitled

    Abstract: No abstract text available
    Text: Three Phase Rectifier Bridge IdAV - 85 A VRRM =800-1600 V Preliminary data V RSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 VUO VUO VUO VUO 85-08N07 85-12N07 85-14N07 85-16N07 Symbol Test Conditions *d A V Tc U sM l2t -o A Types = Maximum Ratings 1 0 0 °C , m odule


    OCR Scan
    85-08N07 85-12N07 85-14N07 85-16N07 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products T HDTMOS Single N-Channel Field Effect Transistor u T SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m fl TMOS W aveFET™ de vice s are an ad van ced se rie s of po w e r M O SFETs w h ich utilize M o to ro la ’s


    OCR Scan
    MMSF3300/D MMSF3300 PDF

    RBV1000

    Abstract: RBV1010 1001RBV
    Text: 5YNSEMI SEMICONDUCTOR RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 10 Amperes 3.9 ± 0.2C3 , 30 ± 0.3 4.9 ± 0.2 - P= K-H FE A TU R E S : * * * * * * * * 0 3.2 ± 0.1 High current capability High surge current capability


    OCR Scan
    RBV1000 RBV1010 UL94V-0 MIL-STD-202, 1001RBV PDF

    Diod UG

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMSF3205/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3205 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS RDS on = 0.015 OHM


    OCR Scan
    MMSF3205/D MMSF3205 Diod UG PDF

    33153

    Abstract: No abstract text available
    Text: O rder this docum ent by M C33153/D MOTOROLA M C33153 Single IGBT G ate Driver T he M C 3 31 53 is spe cifica lly d e sig ned as an IG BT d rive r for high po w e r a p plicatio ns tha t in clud e ac indu ction m otor control, bru shless d c m otor con tro l and un in te rru p ta b le po w e r supplies. A ltho ug h d e sig ned for driving


    OCR Scan
    C33153/D C33153 MC33153/D 33153 PDF

    Untitled

    Abstract: No abstract text available
    Text: CA3140, CA3140A h a r ® J S E M I C O N D U C T O R • M M ■ 4 .5 MHz, BiMOS Operational Amplifier November 1996 with M OSFET Input/Bipolar Output Features Description • MOSFET Input Stage The CA3140A and CA3140 are integrated circuit operational ampli­


    OCR Scan
    CA3140, CA3140A CA3140A CA3140 -10pA PDF

    ITRON DC 205

    Abstract: SF3305
    Text: MOTOROLA Order this document by MMSF3305/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMSF3305 Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8 AMPERES 30 VOLTS W aveFET devices are an advanced series of pow er M O SFETs


    OCR Scan
    MMSF3305/D MMSF3305 ITRON DC 205 SF3305 PDF

    Untitled

    Abstract: No abstract text available
    Text: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1


    OCR Scan
    G0Dlb77 MCC132 MCD132 132-06io1 132-12io1 132-14io1 132-16io1 MCD132-06Â MCD132-06Ã PDF