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    DIOD C11 Search Results

    DIOD C11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIOD C11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    motorola analog ICs vol.1

    Abstract: 45fs 500MSPS JTS8308500 TS81102G0 TS8308500 TSEV8308500G atmel 0825 G
    Text: MAIN FEATURES ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! 8-bit resolution. 500 Msps min sampling rate. 1.3 GHz full power input bandwidth. Band Flatness: TBD Input VSWR (packaged device): TBD SINAD = 45 dB (7.2 Effective Bits), SFDR = 54 dBc @ FS = 500 Msps, FIN = 20 MHz :


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    TS8308500 motorola analog ICs vol.1 45fs 500MSPS JTS8308500 TS81102G0 TS8308500 TSEV8308500G atmel 0825 G PDF

    CQFP68

    Abstract: No abstract text available
    Text: TS8388B ADC 8-bit 1 Gsps Datasheet 1. Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth –3 dB 1 Gsps (min.) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 Gsps, FIN = 20 MHz


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    TS8388B Compati5148 F-91572 0860E CQFP68 PDF

    NPN Two monolithic transistors

    Abstract: d5 diod CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG DIOD B4 85116
    Text: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz


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    2144D NPN Two monolithic transistors d5 diod CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG DIOD B4 85116 PDF

    atmel 0825 G

    Abstract: 2-CQFP CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG atmel Reflow soldering
    Text: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz


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    2144D atmel 0825 G 2-CQFP CQFP68 JTS8388B TS81102G0 TS8388B TS8388BG atmel Reflow soldering PDF

    DIOD MARKING CODE f2

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz


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    2144B DIOD MARKING CODE f2 PDF

    CQFP68

    Abstract: d5 diod FR4 epoxy dielectric constant 4.4 RO4003 MC100EL16 TS8388B TS8388BGL FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric constant 3.2
    Text: ADC 8-bit 1 Gsps TSEV8388B Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1


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    TSEV8388B TSEV8388B 2162C CQFP68 d5 diod FR4 epoxy dielectric constant 4.4 RO4003 MC100EL16 TS8388B TS8388BGL FR4 epoxy dielectric constant 4.2 FR4 epoxy dielectric constant 3.2 PDF

    2144C

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 GSPS, FIN = 20 MHz


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    2144C PDF

    Untitled

    Abstract: No abstract text available
    Text: TS8388B ADC 8-bit 1 Gsps Datasheet 1. Features • • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.5 GHz Full Power Input Bandwidth –3 dB 1 Gsps (min.) Sampling Rate SINAD = 44.3 dB (7.2 Effective Bits), SFDR = 58 dBc, at FS = 1 Gsps, FIN = 20 MHz


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    TS8388B CBGA68 0860F PDF

    E21V

    Abstract: E01V
    Text: Main Features • • • • • • • • • • • • 8-bit Resolution 500 Msps min Sampling Rate Power Consumption: 3.8W Typ 500 mVpp Differential or Single-ended Analog Inputs Differential or Single-ended 50Ω ECL Compatible Clock Inputs ECL or LVDS/HSTL Output Compatibility


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    TSEV8308500GL TS81102G0: TS8308500 E21V E01V PDF

    BDC 47 transistor

    Abstract: JTS8388B RO4003 TS81102G0 TS8388BGL TSEV8388BGL
    Text: Features • • • • • • • • • • • • • • • • • • • • 8-bit Resolution ADC Gain Adjust 1.8 GHz Full Power Input Bandwidth -3 dB 1 GSPS (min) Sampling Rate SFDR = 58 dBc, SINAD = 44.3 dB (7.2 Effective Bits), at FS = 1 GSPS, FIN = 20 MHz


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    data circuit schematics satellite connector

    Abstract: atmel 0825 G JTS8388B TS81102G0 TS8388BG TSEV8388BG Motorola L6 phone schematic diagram
    Text: MAIN FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 8-bit resolution. ADC gain adjust. 1.8 GHz full power input bandwidth. 1 Gsps min sampling rate. SINAD = 44.3 dB (7.2 Effective Bits) SFDR = 58 dBc @ FS = 1 Gsps, FIN = 20 MHz : SINAD = 42.9 dB (7.0 Effective Bits) SFDR = 52 dBc


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    -52dBc data circuit schematics satellite connector atmel 0825 G JTS8388B TS81102G0 TS8388BG TSEV8388BG Motorola L6 phone schematic diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: TS8388BG 1 GSPS 8-BIT A/D CONVERTER DESCRIPTION The TS8388BG is a monolithic 8-bit analog-to-digital converter, designed for digitizing wide bandwidth analog signals at very high sampling rates of up to 1 GSPS. The TS8388BG is using an innovative architecture,


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    TS8388BG TS8388BG PDF

    diagram radar circuit

    Abstract: JTS8388B TS81102G0 TS8388BF TS8388BG TSEV8388BF TSEV8388BG 8388B
    Text: MAIN FEATURES § § § § § § § § § § § § § § § § § 8-bit resolution. ADC gain adjust. 1.8 GHz full power input bandwidth. 1 Gsps min sampling rate. SINAD = 44.3 dB (7.2 Effective Bits) SFDR = 58 dBc @ FS = 1 Gsps, FIN = 20 MHz SINAD = 42.9 dB (7.0 Effective Bits) SFDR = 52 dBc


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    -52dBc TS8388BG diagram radar circuit JTS8388B TS81102G0 TS8388BF TS8388BG TSEV8388BF TSEV8388BG 8388B PDF

    MAGNETICA TRANSFORMER

    Abstract: NTC-10 ohm VARISTOR NTC 10 NTC-10 diode SMD t01 transistor TL431 to92 TL431 SMD optocoupler PC817b Diode smd code f2 D417-4
    Text: PROJECT NAME: STEVAL-ISA033V1 BILL OF MATERIALS Item Quantity Reference AC/DC CONVERTER 1 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 1 1 1 2 1 1 1 3 1 1 1 1 1 1 1 2 18 4 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 1 2 1 1 1 1 1 1 2 1 1 1 33 34 1 J22 J8 RT1


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    STEVAL-ISA033V1 300Vac 220uF-450V 100pF 330uF-35V 68Electronics TL431 HCF4011B TS912 VN750PT MAGNETICA TRANSFORMER NTC-10 ohm VARISTOR NTC 10 NTC-10 diode SMD t01 transistor TL431 to92 TL431 SMD optocoupler PC817b Diode smd code f2 D417-4 PDF

    FR4 substrate epoxy dielectric constant 4.4

    Abstract: FR4 epoxy dielectric constant 4.4 FR4 substrate epoxy dielectric constant 4.6 MC100EL16 RO4003 TS8308500 TS8308500GL TSX8308500GL meander line PCB
    Text: ADC 8-bit 500 Msps TSEV8308500 Evaluation Board . User Guide Table of Contents Section 1 Overview . 1-1


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    TSEV8308500 TSEV8308500 2165C FR4 substrate epoxy dielectric constant 4.4 FR4 epoxy dielectric constant 4.4 FR4 substrate epoxy dielectric constant 4.6 MC100EL16 RO4003 TS8308500 TS8308500GL TSX8308500GL meander line PCB PDF

    FR4 epoxy dielectric constant 4.4

    Abstract: HP16500C MC100EL16 RO4003 TS8308500 TSEV8308500G HP8665 HP8663 BGA72
    Text: DESCRIPTION The TSEV8308500G Evaluation Board EB is a prototype board which has been designed in order to facilitate the evaluation and the characterization of the TS8308500 device (in CBGA72) up to its 1.3 GHz full power bandwidth at up to 500 Msps in the extended temperature range.


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    TSEV8308500G TS8308500 CBGA72) TSEV8308500G FR4 epoxy dielectric constant 4.4 HP16500C MC100EL16 RO4003 HP8665 HP8663 BGA72 PDF

    DIOD M7

    Abstract: M7 DIOD TP30 TP34 DIOD 47 C26
    Text: 34 .807IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of STMicroelectronics have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - STMicroelectronics NV is replaced with ST-NXP Wireless.


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    PDF

    TRANSISTOR BC147

    Abstract: BC148 transistor npn transistor bc148 TRANSISTOR BC149 BC158 transistor transistor BC118 TRANSISTOR BC135 transistor Bc117 transistor BC148 bc117 Transistor
    Text: 53 IkeìuX T ran sisto rs Continued Notes <Y> <2> <4> 5 M inim um value Average value Max. unitateralized power gain Max. frequency o f oscillation W ith heat sink ^tot: Max. total dissipation in free air at 25°C ambient temp. Max. collector-to-base voltage, em itter


    OCR Scan
    ASZ20 100mc121 ASZ21 120mW 300mcn BC107 300mW 300mc121 330mW 50mcnl TRANSISTOR BC147 BC148 transistor npn transistor bc148 TRANSISTOR BC149 BC158 transistor transistor BC118 TRANSISTOR BC135 transistor Bc117 transistor BC148 bc117 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PMÏ RPT-82/RPT-83 PCM REPEATERS P r e c i s io n M o n o lit h ic s In c. FEATURES • • • • drive if the incom ing signal is below the level w here accurate re construction is possible. T h is prevents noise o r cross-talk from appearing as a valid signal that w ould be retransm itted.


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    RPT-82/RPT-83 RPT-83) 100mW) XR-C277 RPT-82/83 100kHz RPT-82/RPT-83 PDF

    zener diode bzy88

    Abstract: bzy88 diod c22 zener diode BZ 320 BZY88 diode c4v3 zener diode diod c16 zener diod diod c33 nec zener diode
    Text: SEC ELECTRON DEVICE 500mw ZENER DIODE B Z Y 8 8 -C 2 V 7 -B Z Y 8 8 -C 3 3 NEC Type BZY88- Series are DHD Double Heatsink Diode construction planar type zener diodes possessing an allowable O U TLIN E DRAWING (Unit : mm) power dissipation o f 500m watt.


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    500mw BZY88- zener diode bzy88 bzy88 diod c22 zener diode BZ 320 BZY88 diode c4v3 zener diode diod c16 zener diod diod c33 nec zener diode PDF

    BTP 10/400

    Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
    Text: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT


    OCR Scan
    T0220 BACE95, BAE795 BACE95R, BAE795R BADE95, BAE995 BABE95, BAE895 BAV70 BTP 10/400 C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109 PDF

    Untitled

    Abstract: No abstract text available
    Text: HC5517 HARRIS S E M I C O N D U C T O R Ringing SLIC Subscriber Line Interface Circuit J a n u a ry 1997 Features Description • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS> 3 REN Capability at 44V rms The HC 5517 is a ringing SLIC designed to accom m odate a


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    HC5517 77VPEAK/54VRMS> 1N4007 1N914 1N4744 1N5255 2N2907 RFP2N10 R25-27 CA741C PDF

    Untitled

    Abstract: No abstract text available
    Text: HC5517 Semiconductor 3 REN Ringing SLIC For ISDN Modem/TA and WLL Ju ly 1998 Features Description • Thru-SLIC Open Circuit Ringing Voltage up to 7 7 V PEAK/5 4 V RMS> 3 REN Capability at 44Vrms The HC 5517 is a ringing SLIC designed to accom m odate a w ide variety of local loop applications. The various applications


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    HC5517 44Vrms applicatio50 PDF

    Untitled

    Abstract: No abstract text available
    Text: HC5517 HARRIS S E M I C O N D U C T O R 3 REN Ringing SLIC For ISDN Modem/TA and WLL Ju ly 1998 Features Description • T hru-S L IC Open Circuit Ringing Voltage up to The HC 5517 is a ringing SLIC designed to accom m odate a w ide variety of local loop applications. The various applications


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    HC5517 1-800-4-HARRIS PDF