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    DIODA SS 14 Search Results

    DIODA SS 14 Result Highlights (1)

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    ARD-AUDIO-DA7212 Renesas Electronics Corporation Ultra-Low Power Stereo Codec Arduino Evaluation Board Visit Renesas Electronics Corporation

    DIODA SS 14 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AAP152

    Abstract: cemi
    Text: DIODA UNIWERSALNA AÄP152 2 - 74/1 SWW 1156-121 Dioda germanowa ostrzowa AAP152 charakteryzuje siç maiym napiçciem przewodzenia. Jest ona przeznaczona glównie do stosowania w ukladach zabezpieczaj^cych, pomiarowych i automatyki. HI» '' 2,71 SS h 5,85 r w


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    AAP152 cemi PDF

    CNV17F-4

    Abstract: CNV17 CNY 42 optocoupler dioda CNV17F
    Text: SIEMENS FEATURES • H igh C urrent T ran sfer R atio C N Y 1 7F -1,40-80% C N Y 1 7F -2,63-125% C N Y 1 7 F -3 ,100-200% C N Y 1 7 F -4 ,160-320% 17 CNY F S E R IE S PHOTOTRAÑSÍSTOR NO BASE CONNECTION OPTOCOUPLER Package Dimensions in Inches mm t fa i fg] f t l


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    SE52744 -X001 CNY17F-2 CNY17F-3 CNY17F CNV17F-4 CNV17 CNY 42 optocoupler dioda CNV17F PDF

    dioda

    Abstract: BPYP21 CQYP17
    Text: 5-74/3 DIODA ELEKTROLUMINESCENCYJNA CQYP17 SWW 1156-6 Dioda elektrolum inescencyjna w ykonana z arsen k u galu stanow i zrodio prom ieniow ania podczerwonego o stru m ieniu ciqglym lub m odulow anym . Z najduje ona zastosow anie p rzy w spölpracy z fo to tra n zystorem BPYP21 jako w skaznik konca tasm y w czytnikach tasm perforow anych oraz w u kladach lokacji optycznej, w ukladach au to m aty k i i k o n troli oraz w tech nice pom iarow ej.


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    CQYP17 BPYP21 dioda CQYP17 PDF

    4804C

    Abstract: NA-06 SFH480403
    Text: SIEM EN S G a A I A s - L a s e r D io d e 1 0 0 0 m W S F H 4 Ö0 4 0 2 SFH 480403 Features * Monochromatic coherent radiafcon source for pulse and cw-Qpeiation • M Q CV D querifurii-well structure * Dieleotrc asymmetric coated laser mirrors * Emissionwi-dth: 20C u.m


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    E50403 Q627Q2-F355 QaS702-Pieifi 4804C3 4804C NA-06 SFH480403 PDF

    dioda BY 235

    Abstract: DIODA SS 14
    Text: IR FR /U 420A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ By* = 500V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ Vos = 500V


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    IRFR/U420A dioda BY 235 DIODA SS 14 PDF

    2N6767

    Abstract: No abstract text available
    Text: 2N6767 2N6768 23 H a r r is N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistors A u g u s t 1991 Features Package T O -2 0 4 A A • 12A a n d 14A, 3 5 0 V - 4 0 0V B O T T O M V IE W • ro s o n = 0.4Î1 an d 0.3ÎÎ • S O A is P o w e r-D is sip a tio n Lim ited


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    2N6767 2N6768 PDF

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


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    0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 PDF

    NX DIODE SM

    Abstract: 2N6164 2N6764 q2N6764 MOSF6
    Text: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


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    2N6764 2N6764 NX DIODE SM 2N6164 q2N6764 MOSF6 PDF

    APT5012JNU2

    Abstract: tl3060 rrmk 1
    Text: A dvanced P o w er Te c h n o l o g y APT5012JNU2 500V 43A 0.12Í2 ISOTOP® PO W ER MOS IV N -C H A N N E L ENHANCEM ENT M ODE HIGH VOLTAGE POW ER M OSFETS MAXIMUM RATINGS Symbol V D SS All Ratings: T c = 25°C unless otherwise specified. Parameter UNIT


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    APT5012JNU2 5012JWU2 OT-227 APT5012JNU2 tl3060 rrmk 1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


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    DS4313 ITE35X12 ITE35X12 37bfl522 002b44H 1TE35X12 37bfl5E Q02b4M5 PDF

    OA7 diode

    Abstract: AL 1450 DV
    Text: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.


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    IRFV064 1RFV064D IRFV064U O-258 MIL-S-19500 I-454 OA7 diode AL 1450 DV PDF

    rj dioda

    Abstract: No abstract text available
    Text: - I N T E R N A T I O N A L RECTIFIER IO R in t e r n a t io n a l 73 2.5 -/? DE~| 4ÖSS4SB OOObTM? 0 | ~ Data Sheet No. PD-3.149 r e c t if ie r S30DF S E R IE S 1600-1400 VOLTS RANGE STANDARD TURN-OFF TIME 30 fjs 290 AMP RMS, RING AM PLIFYING GATE INVERTER TY P E STUD MOUNTED S C R s


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    S30DF T0-209AD S3QOF16AO. O-209AE O-118) rj dioda PDF

    MDA980-1

    Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
    Text: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer


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    MDA980-1 MDA980-6 MDA990-1 MDA990-6 MDA990 MDA990-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier PDF

    Katalog CEMI

    Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
    Text: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby


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    PDF

    sn 1699

    Abstract: No abstract text available
    Text: What H E W L E T T * miltm PACKARD 2 - 26.5 GHz GaAs MMIC Traveling Wave Amplifier Technical Data HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHZ) HMMC-5026 (2-26.5 GHz) Features • Wide-Frequency Range: 2-26.5 GHz • High Gain: 9.5 dB • Gain Flatness: 0.75 dB


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    HMMC-5021 HMMC-5022 HMMC-5026 2980x HP83040 sn 1699 PDF

    74188

    Abstract: 74181 ALU SN54181J AM9341 SN74181N ALU pin specification 74181 circuit ALU 74-181 74181 alu active high 74181 pin diagram 74181 pin configuration
    Text: 0/^-5 I I Am9341-Am54/74181 Four Bit Arithmetic Logic Unit/Function Generator Distinctive Characteristics: Full look-ahead for high-speed arithm etic operation on long words. 100% reliability assurance testing in compliance with M IL STD 883. Mixing privileges for obtaining price discounts. Refer


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    Am9341 Am54/74181 74188 74181 ALU SN54181J SN74181N ALU pin specification 74181 circuit ALU 74-181 74181 alu active high 74181 pin diagram 74181 pin configuration PDF

    VHF FRONT END

    Abstract: U4062B u4062 dioda MV 5 U 4062-B Linear Technology ltage e3 IR 4062 telefunken hi-fi
    Text: 44E D a öiSQQ'ifci DGlü^SO 4 E3 ALÊG U 4062 B •U 4062 B-FP TELEFUNKEN ELECTRONIC _ VHF FRONT END FOR CAR RADIOS AND HiFi RECEIVERS Technology: Bipolar ‘ . . / T " ”7 7 - 0 5 ^ 0 5 Fe atures: • Com pletely integrated F M front end


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    P-39mar Q15l9x VHF FRONT END U4062B u4062 dioda MV 5 U 4062-B Linear Technology ltage e3 IR 4062 telefunken hi-fi PDF

    ot31

    Abstract: 0P-50 pmi op50 0p50
    Text: ANALOG DEVICES High-Output-Current Operational Amplifier /W > 5 0P-50 □ FEATURES • • a « • • • • a • • ORDERING INFORMATION! Open-Loop Qatn. . 10,000,000v/v Min Low Input Offset Voltage . .25iN Max


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    0P-50 000v/v 14-PIN 200mV. ot31 0P-50 pmi op50 0p50 PDF

    HV400CP

    Abstract: HV400IP hv4001 HY400 scr gate driver ic HV400 SCR TRIGGER PULSE TRANSFORMER EFJ142 sKA-2 DIODE 86CM
    Text: Hl/400 HARRIS S E M I C O N D U C T O R Ë È W h V i-fC C C P ay 1992 High Current M O S F E T Driver Features Description • Fast Fail T im e s . 16ns at 10,QQ0pF The HV400 is a single monolithic, non-inverting high current


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    HV400 000pp 300kHz HV400 HV400CP HV400IP hv4001 HY400 scr gate driver ic SCR TRIGGER PULSE TRANSFORMER EFJ142 sKA-2 DIODE 86CM PDF

    Untitled

    Abstract: No abstract text available
    Text: TYPES SN74LS670, SN54LS670 4-BY-REGISTER FILES WITH 3-STATE OUTPUTS BULLETIN NO. DL-S 7612122, MARCH 1974 - REVISED DECEMBER 1983 • Separate Read/Write Addressing Permits Simultaneous Reading and Writing • Fast A cce ss Tim es . . . Typically 20 ns • Organized as 4 Words of 4 Bits


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    SN74LS670, SN54LS670 SN54LS670. SN74LS670 SN54LS170 SN74LS170 PDF

    BTP-128-400

    Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
    Text: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW


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    NS113 B31/C4 O-116 MP-117 CB-79 MP-186 CB-68 CB-109 CE75A CB-108 BTP-128-400 blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129 PDF

    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


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    PDF

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


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    AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915 PDF

    HD46508PA

    Abstract: HD46508P HD46508 HD46508P-1 HD46508-1 HD46508A HD46508A-1 HMCS6800 HD46508P1 Hitachi Scans-001
    Text: HD46508, HD46508-1, -HD46508A, HD46508A-1 ADU Analog Data Acquisition Unit The HD46508 is a monolithic NMOS device with a 10-bit analog-to-digjtal converter, a programmable voltage comparator, a 16-channel analog multiplexer and HMCS6800 microprocessor


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    HD46508, HD46508-1 HD46508A, HD46508A-1 HD46508 10-bit 16-channel HMCS6800 FS73/8 HD46508PA HD46508P HD46508P-1 HD46508A HD46508A-1 HD46508P1 Hitachi Scans-001 PDF