IXDR30N120
Abstract: 30N120 5027A R30N120 30n120d1 MJ10
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol
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30N120
30N120
247TM
E153432
IXDR30N120
IXDR30N120
5027A
R30N120
30n120d1
MJ10
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Untitled
Abstract: No abstract text available
Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol
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30N120
30N120
247TM
E153432
IXDR30N120
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DIODE 0644
Abstract: 35N120D1
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
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DIODE 0644
Abstract: 35N120D1 IXER 35N120D1 diode RG 39
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C
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35N120D1
ISOPLUS247TM
247TM
E153432
DIODE 0644
35N120D1
IXER 35N120D1
diode RG 39
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35N60
Abstract: 35N60BD1
Text: IXDR 35N60 BD1 VCES = 600 V = 38 A IC25 VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ
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35N60
247TM
IXDR30N60BD1
35N60BD1
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Untitled
Abstract: No abstract text available
Text: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A VCES =1200V VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
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35N120D1
ISOPLUS247TM
247TM
E153432
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Phase-leg Rectifier Diode
Abstract: DIODE 0644 25-12A DSP25
Text: DSP 25 VRRM = 1200/1600 V IF RMS = 2x43 A IF(AV)M = 2x28 A Phase-leg Rectifier Diode VRSM V VRRM V TO-247 AD Type TO-268 AA ISOPLUS247TM 1300 1200 DSP 25-12A DSP 25-12AT 1700 1600 DSP 25-16A DSP 25-16AT DSP 25-16AR 1 2 TO-247 AD TO-268 AA Version A Version AT
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O-247
O-268
5-12A
25-12AT
5-16A
25-16AT
25-16AR
ISOPLUS247TM
Phase-leg Rectifier Diode
DIODE 0644
25-12A
DSP25
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Untitled
Abstract: No abstract text available
Text: IXDR 35N60 BD1 VCES = 600 V IC25 = 38 A VCE sat typ = 2.2 V IGBT with optional Diode High Speed, Low Saturation Voltage ISOPLUS 247TM C G G C E E G = Gate, C = Collector , Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V Features ● ● VCGR TJ = 25°C to 150°C; RGE = 20 kΩ
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35N60
247TM
IXDR30N60BD1
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washing machine circuit diagram universal motor y
Abstract: slip ring induction motor universal washing machine motor scalar control of induction motor m 9583 transistor axial speed control of 1 phase induction motor by using scr pwm 600w inverter diagram speed control of induction motor by using scr 12v dc motor speed controller using igbt pwm USING TRIAC IN STARTING SINGLE PHASE induction mo
Text: A Reference Guide for Motor Control S T M P 1 U T T I N G I C R O E L E C T R O N I C S Y O I O U F Y N O U R C O N T R O L M O T O R 2 Contents Introduction 4 Product Family Highlights 5 The Universal Motor 6 The Brush DC Motor 8 The Single-Phase Induction Motor
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CH-1215
26B/10
SL71Y
BRMOTOR/1000
washing machine circuit diagram universal motor y
slip ring induction motor
universal washing machine motor
scalar control of induction motor
m 9583 transistor axial
speed control of 1 phase induction motor by using scr
pwm 600w inverter diagram
speed control of induction motor by using scr
12v dc motor speed controller using igbt pwm
USING TRIAC IN STARTING SINGLE PHASE induction mo
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BZW 10 diode
Abstract: DO-204AC diode 0613 06-5V8 06342
Text: BZW 06-5V8 . BZW 06-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Maximum stand-off voltage Maximale Sperrspannung
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06-5V8
06-376B
DO-15
DO-204AC)
UL94V-0
06-171B
BZW 10 diode
DO-204AC
diode 0613
06-5V8
06342
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diode bzw 06 26
Abstract: diode 0613 diode bzw 0611 06342
Text: BZW 06-5V8 . BZW 06-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Maximum stand-off voltage Maximale Sperrspannung
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06-5V8
06-376B
DO-15
DO-204AC)
UL94V-0
06-154B
diode bzw 06 26
diode 0613
diode bzw 0611
06342
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diode bzw 27
Abstract: diode bzw 0611 BZW 06-44 diode 06-342 diode bzw 06-33 DO-204AC diode bzw 06111 06-5V8 06342 BZW+20
Text: BZW 06-5V8 . BZW 06-376B Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Maximum stand-off voltage Maximale Sperrspannung
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06-5V8
06-376B
DO-15
DO-204AC)
UL94V-0
06-154B
diode bzw 27
diode bzw 0611
BZW 06-44 diode
06-342
diode bzw 06-33
DO-204AC
diode bzw 06111
06-5V8
06342
BZW+20
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HHM290
Abstract: No abstract text available
Text: omega.com OMEGAnet OnLine Service www.omega.com Benelux: Internet e-mail [email protected] One Omega Drive, Box 4047 Stamford, CT 06907-0047 Tel: 203 359-1660 e-mail: [email protected] Canada: 976 Bergar Laval (Quebec) H7L5A1 Tel: (514) 856-6928 e-mail: [email protected]
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631111ed
EN61010-1
30minutes
12Vmax.
202mm
100mm
HHM290
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HHM290/N
Abstract: No abstract text available
Text: HHM290 SUPERMETER Next Generation SUPERMETER With Laser Sighting 3 METERS IN 1 Patented Non-contact Temperature Measurement ® Differential Temperature Measurement HHM290 $ 345 ߜ Full Function Auto-Ranging Digital Multimeter ߜ Infrared Pyrometer with
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HHM290
HHM290
HHM290,
HHM290-SC,
HHM290/N
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Untitled
Abstract: No abstract text available
Text: MCO 100 Single Thyristor Module ITRMS = 156 A VRRM = 1200-1600 V ITAV = 99 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 100-12io1 MCO 100-16io1 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
100-12io1
100-16io1
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DIODE 40c 0644
Abstract: 0644A MCO 75-16IO1 75-16io1
Text: MCO 75 Single Thyristor Module ITRMS = 121 A VRRM = 1200-1600 V ITAV = 77 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 75-12io1 MCO 75-16io1 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
75-12io1
75-16io1
DIODE 40c 0644
0644A
MCO 75-16IO1
75-16io1
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100-12IO1
Abstract: MCO 100-12IO1 thyristor Itav 60 Itrms 100
Text: MCO 100 Single Thyristor Module ITRMS = 156 A VRRM = 1200-1600 V ITAV = 99 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 100-12io1 MCO 100-16io1 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
100-12io1
100-16io1
100-12IO1
MCO 100-12IO1
thyristor Itav 60 Itrms 100
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25-12io1
Abstract: DIODE 40c 0644 single thyristor 2512I 4931T 0644A 25-16IO1
Text: MCO 25 Single Thyristor Module ITRMS = 49 A VRRM = 1200-1600 V ITAV = 31 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 25-12io1 MCO 25-16io1 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
25-12io1
25-16io1
25-12io1
DIODE 40c 0644
single thyristor
2512I
4931T
0644A
25-16IO1
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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Untitled
Abstract: No abstract text available
Text: PD -9.1064 bitemational ior Rectifier IRGP440UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V c e s = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGP440UD2
4ASS452
0G20437
O-247AC
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235S01
Abstract: Q228CEL-1077B kopin LC7030 MOC 3063 APPLICATION NOTE LB1405 LM7000 LM7000N LM7001 csb400p
Text: SANYO SEMICONDUCTOR C0RP 32E D B 711707b 0007841 1 • T-77-0S-ÛS CMOS LSI Electronic Tuning Controller 1675B The LC7030 is a controller for direct PLL ICs LM7000, LM7000N and LM7001. It can be used to form a PLL frequency synthesizer for home stereo use.
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7TT707
T-77-05
3025B
1675b
LC7030
LM7000,
LM7000N
LM7001.
500msec.
70msec
235S01
Q228CEL-1077B
kopin
MOC 3063 APPLICATION NOTE
LB1405
LM7000
LM7001
csb400p
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transistor BU 102S
Abstract: ford ecu pinout free transistor equivalent book 2sc National Semiconductor Audio Handbook 1NA101 2N5564 equivalent spice model Tame Transducer Bridge Errors With Op-Amp Feedback Control DAC729 tkp transformer 74ls324
Text: K O PP GROUP ADVANCED SEMICONDUCTOR DEVICES PTY LTD. P.O. BOX 2944 JOHANNESBURG 2000 TEL. 802-5820 The Handbook of Linear 1C Applications The How-To Book for High-Performance Operational Amplifiers A/D Converters Instrumentation Amplifiers D/A Converters
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Military Advanced BiCMOS Products Product specification Octal bus transceiver/register, inverting 3-State FEATURES DESCRIPTION • Combines 54ABT245 and 54ABT374 type functions in one device The 54ABT648 high-performance BiCMOS device combines low static and dynamic
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54ABT648
54ABT245
54ABT374
48mA/-24mA
500mA
54ABT648
54ABT
500ns
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54ABT245
Abstract: 54ABT374
Text: P h ilip s Sem iconductors M ilitary Advanced BiCMOS P roducts P ro du ct sp ecifica tio n Octal bus transceiver/register, inverting 3-State FEATURES DESCRIPTION • Combines 54ABT245 and 54ABT374 type functions in one device The 54ABT648 high-performance BiCMOS
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54ABT648
54ABT245
54ABT374
48mA/-24mA
500mA
54ABT648
54ABT
500ns
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