MSD700
Abstract: Aeroflex / Metelics
Text: Step Recovery Diode MSD700-12 DESCRIPTION The Aeroflex / Metelics MSD700-12 SRD Step Recovery Diode is a silicon Varactor which provides high output power and efficiencies in harmonic generator applications. Features • Low Transition Time • High Efficiency
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MSD700-12
MSD700-12
MSD700
Aeroflex / Metelics
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MSD700
Abstract: step recovery diode application step recovery diode
Text: Step Recovery Diode MSD700-12 DESCRIPTION The Aeroflex / Metelics MSD700-12 SRD Step Recovery Diode is a silicon Varactor which provides high output power and efficiencies in harmonic generator applications. Features • Low Transition Time • High Efficiency
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MSD700-12
MSD700
step recovery diode application
step recovery diode
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diode smd marking code 76
Abstract: diode smd marking T2 smd diode marking 79 smd diode marking codes diode marking table smd diode marking T2 DIODE SMD CODE MARKING s7 diode marking n2 diode marking 76 marking code n2 rf
Text: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview Type number Package Configuration Philips
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1PSxSB17
1PS66SB17
OT666
1PS76SB17
OD323
SC-76
1PS79SB17
OD523
SC-79
diode smd marking code 76
diode smd marking T2
smd diode marking 79
smd diode marking codes
diode marking table
smd diode marking T2
DIODE SMD CODE MARKING s7
diode marking n2
diode marking 76
marking code n2 rf
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diode smd marking SOD323 5-6
Abstract: 1PS76SB17 data sheet for all smd components marking code n2 rf 1PS66SB17 1PS79SB17 SC-76 marking code 4 SC-79 DETECTOR diode SC-79
Text: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview
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1PSxSB17
1PS66SB17
OT666
1PS76SB17
OD323
SC-76
1PS79SB17
OD523
SC-79
diode smd marking SOD323 5-6
1PS76SB17
data sheet for all smd components
marking code n2 rf
1PS66SB17
1PS79SB17
SC-76
marking code 4 SC-79
DETECTOR diode SC-79
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Untitled
Abstract: No abstract text available
Text: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview
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1PSxSB17
1PS66SB17
OT666
1PS76SB17
OD323
SC-76
1PS79SB17
OD523
SC-79
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ma 1458
Abstract: DSA003640 Hitachi DSA003640
Text: HZM3.3WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1458 Z Rev.0 Oct. 2001 Features • HZM3.3WA has two devices, and can absorb external + and -surge. • MPAK Package is suitable for high density surface mounting. Ordering Information
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ADE-208-1458
D-85622
D-85619
ma 1458
DSA003640
Hitachi DSA003640
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SC-59A
Abstract: 33a zener
Text: HZM3.3WA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-1458A Rev.2.00 Jun 03, 2005 Features • HZM3.3WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting. Ordering Information
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REJ03G1205-0200
ADE-208-1458A)
PLSP0003ZC-A
Two5-900
Unit2607
SC-59A
33a zener
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Untitled
Abstract: No abstract text available
Text: HZM3.3WA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-1458A Z Rev.1 Nov. 2002 Features • HZM3.3WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting. Ordering Information Type No. Laser Mark
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ADE-208-1458A
D-85622
D-85619
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Untitled
Abstract: No abstract text available
Text: HZM3.3WA Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1205-0200 Previous: ADE-208-1458A Rev.2.00 Jun 03, 2005 Features • HZM3.3WA has two devices, and can absorb surge. • MPAK Package is suitable for high density surface mounting. Ordering Information
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REJ03G1205-0200
ADE-208-1458A)
PLSP0003ZC-A
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14585 Revision. 2 Product Standards Zener Diode DZ2602700L DZ2602700L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27027 in ML2 type package 0.6 2 • Features 1.0 Excellent rising characteristics of zener current IZ
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TT4-EA-14585
DZ2602700L
DZ27027
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14588 Revision. 2 Product Standards Zener Diode DZ2603300L DZ2603300L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27033 in ML2 type package 0.6 2 • Features 1.0 Excellent rising characteristics of zener current IZ
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TT4-EA-14588
DZ2603300L
DZ27033
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14586 Revision. 2 Product Standards Zener Diode DZ2604300L DZ2604300L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27043 in ML2 type package 0.6 2 • Features 1.0 Excellent rising characteristics of zener current IZ
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TT4-EA-14586
DZ2604300L
DZ27043
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14587 Revision. 2 Product Standards Zener Diode DZ2603000L DZ2603000L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27030 in ML2 type package 0.6 2 • Features 1.0 Excellent rising characteristics of zener current IZ
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TT4-EA-14587
DZ2603000L
DZ27030
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14589 Revision. 2 Product Standards Zener Diode DZ2603600L DZ2603600L Silicon epitaxial planar type Unit : mm For constant voltage / For surge absorption circuit DZ27036 in ML2 type package 0.6 2 • Features 1.0 Excellent rising characteristics of zener current IZ
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TT4-EA-14589
DZ2603600L
DZ27036
UL-94
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T 4018 Datenblatt
Abstract: D-6001N diode
Text: Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode D 6001N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Rückwärts-Spitzensperrspannung Kenndaten repetitive peak reverse voltages
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6001N
T 4018 Datenblatt
D-6001N diode
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SOD-323 land pattern
Abstract: ASD500V
Text: ASD500V FRONTIER ELECTRONICS CO., LTD. 100mA Advanced Sckottky Barrier Diode Surface mount small signal type FEATURES ! EXTREMELY LOW VF ! EXTREMELY THIN PACKAGE ! LOW STORED CHARGE ! MAJORITY CARRIER CONDUCTION 2.0±0.2 CATHODE MARK R:0.3 MECHANICAL DATA
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ASD500V
100mA
CASECASESOD-323
OD-323
1000m
SOD-323 land pattern
ASD500V
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K815P
Abstract: K825P K845P V14390
Text: K815P/ K825P/ K845P Vishay Semiconductors Optocoupler with Photodarlington Output Description The K815P/ K825P/ K845P consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.
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K815P/
K825P/
K845P
K845P
16-lead
D-74025
K815P
K825P
V14390
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K845P
Abstract: K815P K825P
Text: K815P/ K825P/ K845P Vishay Telefunken Optocoupler with Photodarlington Output Description The K815P/ K825P/ K845P consist of a photodarlington optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.
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K815P/
K825P/
K845P
K845P
16-lead
D-74025
K815P
K825P
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ED1100
Abstract: IC 7402 TCED1100 TCED1100G TCED2100 TCED4100 12228
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
D-74025
ED1100
IC 7402
TCED1100G
TCED2100
12228
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Untitled
Abstract: No abstract text available
Text: High Power Multimode Laser Arrays PML-1xx series Princeton Lightwave offers a series of high power laser diode arrays for long wavelength 1400 to 1850 nm applications. These lasers feature a proprietary MQW laser structure that yields exceptional high power and
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IC 7402 pin diagram
Abstract: No abstract text available
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
D-74025
IC 7402 pin diagram
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TCED1100
Abstract: TCED1100G TCED2100 TCED4100 12228
Text: TCED1100 G up to TCED4100 Vishay Semiconductors Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
D-74025
TCED1100G
TCED2100
12228
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pin diagram of IC 7402
Abstract: IC 7402 pin diagram 4 pin optocoupler CI 7402 TCED4100 IC 7402 TCED1100 TCED1100G TCED2100 ED1100
Text: TCED1100 G up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCED1100
TCED4100
TCED1100/
TCED2100/
TCED4100
16-lead
TCED1100G
pin diagram of IC 7402
IC 7402 pin diagram
4 pin optocoupler
CI 7402
IC 7402
TCED2100
ED1100
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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