Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE 1A 1000V Search Results

    DIODE 1A 1000V Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1A 1000V Datasheets Context Search

    Catalog Datasheet
    MFG & Type
    Document Tags
    PDF

    diode case R-1

    Abstract: 02 diode R-1 02 diode case R-1 DO-41-MINI
    Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction


    Original
    G110DL G110ML 30Amp 300uS diode case R-1 02 diode R-1 02 diode case R-1 DO-41-MINI PDF

    2510W

    Abstract: RS1M diode
    Text: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10


    Original
    DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode PDF

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Low VF Rectifier Diode G110DL THRU G110ML Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Low forward voltage drop


    Original
    G110DL G110ML 30Amp 300uS PDF

    diode 1000V 10a

    Abstract: 02 diode case R-1 diode case R-1 200V-1000V
    Text: ZOWIE Low VF Rectifier Diode G110DLH THRU G110MLH Low VF Rectifier Diode 200V~1000V / 1.0A VF < 0.90V @IF = 1A FEATURES IFSM = 30Amp * * * * * * Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction


    Original
    G110DLH G110MLH 30Amp 300uS diode 1000V 10a 02 diode case R-1 diode case R-1 200V-1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop


    Original
    GP10DLH GP10MLH 50Amp DO-204AL DO-204AL 300uS PDF

    GP10DL

    Abstract: DO-204AL
    Text: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop


    Original
    GP10DL GP10ML 50Amp DO-204AL DO-204AL MIL-STD-750, 300uS PDF

    DO-204AL

    Abstract: diode 10dl
    Text: ZOWIE Low VF Rectifier Diode GP10DLH THRU GP10MLH Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop


    Original
    GP10DLH GP10MLH 50Amp DO-204AL DO-204AL 300uS diode 10dl PDF

    DSA10

    Abstract: DSA10G DSA10J DSA10L DIODE 1.0A 1000V
    Text: Ordering number:EN711D DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Plastic molded type. · Peak Reverse Voltage : VRM=600 to 1000V · Average Rectified Current : IO=1A. unit:mm 1005 [DSA10] C:Cathode A:Anode


    Original
    EN711D DSA10 DSA10] DSA10G DSA10J DSA10L DSA10 DSA10G DSA10J DSA10L DIODE 1.0A 1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability


    Original
    GF10DLH GF10MLH 50Amp DO-214AC DO-214AC PDF

    24 DO-214AC

    Abstract: MARKING code 14 DO-214AC gf10ml
    Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DLH THRU GF10MLH VF < 0.91V @IF = 1A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability


    Original
    GF10DLH GF10MLH 50Amp DO-214AC DO-214 24 DO-214AC MARKING code 14 DO-214AC gf10ml PDF

    GF10DL

    Abstract: GF10GL GF10JL GF10KL GF10ML
    Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications


    Original
    GF10DL GF10ML 50Amp DO-214AC DO-214AC GF10GL GF10JL GF10KL GF10ML PDF

    GP10DL

    Abstract: GP10GL GP10JL GP10KL GP10ML
    Text: ZOWIE Low VF Rectifier Diode GP10DL THRU GP10ML Low VF Rectifier Diode VF < 0.90V @IF = 1A FEATURES IFSM = 50Amp GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop o 1.0 Ampere operation at TA=75 C with no thermal runaway


    Original
    GP10DL GP10ML 50Amp DO-204AL DO-204AL MIL-STD-750, 300uS GP10GL GP10JL GP10KL GP10ML PDF

    gf10ml

    Abstract: No abstract text available
    Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications


    Original
    GF10DL GF10ML 50Amp DO-214AC DO-214AC gf10ml PDF

    Untitled

    Abstract: No abstract text available
    Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 1.0A GF10DL THRU GF10ML VF < 0.91V @IF = 1A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction High surge current capability Ideal for surface mount automotive applications


    Original
    GF10DL GF10ML 50Amp DO-214AC DO-214AC PDF

    10205 transistor

    Abstract: all transistor E80276 QM50TB-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original
    QM50TB-2H E80276 E80271 10205 transistor all transistor E80276 QM50TB-2H PDF

    QM50DY-2H

    Abstract: E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original
    QM50DY-2H E80276 E80271 QM50DY-2H E80276 PDF

    E80276

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50E2Y/E3Y-2H • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original
    QM50E2Y/E3Y-2H E80276 E80271 E80276 PDF

    QM50TB-2HB

    Abstract: E80276 all transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original
    QM50TB-2HB E80276 E80271 100mA QM50TB-2HB E80276 all transistor PDF

    QM50DY-2HB

    Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original
    QM50DY-2HB E80276 E80271 100mA QM50DY-2HB TRANSISTOR TC 100 E80276 transistor VCE 1000V PDF

    A14A

    Abstract: A14F
    Text: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction


    OCR Scan
    MIL-STD-19500 A14A A14F PDF

    IXYS IXBOD

    Abstract: lt 747 bod ixys
    Text: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”


    OCR Scan
    035x2m IXYS IXBOD lt 747 bod ixys PDF

    DSA10

    Abstract: DSA10G DSA10J DSA10L
    Text: Ordering number :EN711D N 0 .7 I ID DSA10 / Diffused Junction Type Silicon Diode 1.0A Power Rectifier F e a tu re s • P lastic molded type •P eak reverse voltage V r m —“ 600 to —1000V • Average rectified cu rren t Iq = 1A A b so lu te M ax im u m R a tin g s


    OCR Scan
    DSA10 DSA10G DSA10J DSA10L H-29--j DSA10 PDF

    IC 7805

    Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
    Text: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)


    OCR Scan
    1N4001 1N4007 0V-1000V) 1N5391 1N5399 1N5400 1N5408 S6A05 IC 7805 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan
    QM50HY-2H E80276 E80271 PDF