2N3904 331 transistor
Abstract: lm63
Text: LM63 LM63 +/-1C/+/-3C Accurate Remote Diode Digital Temperature Sensor withIntegrated Fan Control Literature Number: SNAS190D LM63 ±1°C/±3°C Accurate Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • 10 bit plus sign remote diode temperature data format,
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SNAS190D
2N3904,
2N3904 331 transistor
lm63
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C6622 TECHNICAL DATA DATASHEET 345, REV B SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Glass passivated Epitaxial Diode with Mesa Structure
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1C6622
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1c4148
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4148 TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING
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1C4148
1c4148
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C914 TECHNICAL DATA DATASHEET 4230, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING
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1C914
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1c4148
Abstract: No abstract text available
Text: 1C4148 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED RATING
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1C4148
1c4148
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C3595 TECHNICAL DATA DATASHEET 4228, Rev- LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE DROP DIODE DESCRIPTION: A 150 VOLT, 0.15 AMP, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE DROP DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED
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1C3595
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1C5552
Abstract: No abstract text available
Text: 1C5552 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4312, REV- STANDARD RECOVERY SILICON RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • • • • Glasspassivated Epitaxial Diode with Mesa Structure
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1C5552
1C5552
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d06s60
Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
P-TO220-3
Q67040-S4370
D06S60
d06s60
diode schottky 600v
T-1228
SDB06S60
SDP06S60
smd diode marking code UJ
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smd diode marking code UJ
Abstract: Q67040-S4370
Text: SDB06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
P-TO220-3
D06S60
Q67040-S4370
smd diode marking code UJ
Q67040-S4370
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D06S60
Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Text: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDB06S60
Q67040-S4370
D06S60
D06S60
Q67040-S4370
P-TO263-3-2
T-1228
SDB06S60
SDP06S60
smd schottky diode marking 6a
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SDP06S60
Abstract: No abstract text available
Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDP06S60
SDT06S60
PG-TO220-2-2.
P-TO220
P-TO220-3
Q67040-S4371
Q67040-S4446
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d06s60
Abstract: D06S60C SDT06S60 SDP06S60 Schottky diode TO220 T-1228 diode schottky 600v Q67040-S4446 600 V power Schottky silicon carbide diode PG-TO220-2-2
Text: SDP06S60 SDT06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDP06S60
SDT06S60
PG-TO220-2-2.
P-TO220
P-TO220-3
Q67040-S4371
D06S60
d06s60
D06S60C
SDT06S60
SDP06S60
Schottky diode TO220
T-1228
diode schottky 600v
Q67040-S4446
600 V power Schottky silicon carbide diode
PG-TO220-2-2
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d06s60
Abstract: No abstract text available
Text: SDP06S60 SDT06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery
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SDP06S60
SDT06S60
PG-TO220-2-2.
PG-TO220-3-1.
Q67040-S4371
Q67040-S4446
d06s60
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D04S60
Abstract: P-TO252 Q67040-S4368 Q67040-S4369 Q67040-S4445 SDD04S60 SDP04S60 SDT04S60 SCHOTTKY 4A 600V
Text: SDP04S60, SDD04S60 SDT04S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery
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SDP04S60,
SDD04S60
SDT04S60
P-TO220-2-2.
P-TO252-3-1.
P-TO220-3-1.
SDP04S60
Q67040-S4369
D04S60
D04S60
P-TO252
Q67040-S4368
Q67040-S4369
Q67040-S4445
SDD04S60
SDP04S60
SDT04S60
SCHOTTKY 4A 600V
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C 36"#$ 6%1C3B 1322 14BBFB &' 6 6*+
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DDB6U75N16YR
14BBFB
06123B
F223B
6043C0F0613265C
3269F
6123B
043C0F06
06123B
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LB1105M
Abstract: b073 LBX105M
Text: Ordering number: EN 3263 Monolithic Digital 1C LB1105M 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC that integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode matrix, OR gate applications. Replacement of
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LB1105M
LBX105M
LB1105M
b073
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TS DIODO
Abstract: LB1105M IC 3263 6-Channel
Text: O rde rin g n u m b e r: EN 3263 LB1105M No.3263 Monolithic D igital IC SA%YO 6-Channel X 4-Unit Diode Array i Ä>The LB1105M is a diode a rra y 1C th a t integrates 4 units of 6-channel diode a rra y w ith anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR g ^ Î^ a p p lip tio n ^ i Replacem ent of
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LB1105M
LB1105M
MFP30SD
1260TA
TS DIODO
IC 3263
6-Channel
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Untitled
Abstract: No abstract text available
Text: Ì S R m HHÌ NEC PHOTO DIODE H SU «* PH502HC 1C BU8LT-ÍN PHOTO DIODE NEPOC SERIES The PH502HC is a digital-output light receiving 1C integrating a photo diode and signal processing circuit in a chip. And the direct connection with an 1C without using a processing circuit simplifies the circuit configuration. It is the most suitable as
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PH502HC
PH502HC
SE308
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LED pigtailed
Abstract: Diode PH 13M
Text: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier
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STM-4/OC-12,
LED pigtailed
Diode PH 13M
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Untitled
Abstract: No abstract text available
Text: MON35W42 STANDARD MICROSYSTEMS CORPORATION Hardware Monitoring 1C with Thermal Diode Interface FEATURES Monitoring Items 3 Thermal Inputs From Remote Thermistors or 2N3904 NPN-type Transistors or Pentium II Deschutes Thermal Diode Output 9 Voltage Inputs - Typical for Vcore,
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MON35W42
2N3904
MON35W42
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8573FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8573FN High-Frequency Modulation 1C for Laser Diode The TA8573FN is a high frequency modulation 1C for laser diode. This product is designed for PUH Pick Up Head of optical disc drive.
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TA8573FN
TA8573FN
150MHz
400MHz.
50mAp-p.
30mAp-p.
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MTX70A
Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35
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3s300A
ZG50HFL120C1S
SKM75GB128DN
BSM50GB120DLC
ZG75HFL120C1S
SKM100GB128DN
BSM75GB120DLC
ZG100HFL120C1S
SKM145GB128DN
BSM100GB120DLCK
MTX70A
FF300R12KS4
MOTOR SOFT START
MDS100
mfq 60A
bridge rectifier SSC
AC welder IGBT circuit
ZG300HFL120C2S
3phase bridge diode mds 60
SKM200GB125DN
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