C 704 diode
Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
C 704 diode
DIODE R3
1N3070
CMDD2004
CMLD2004
CMOD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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CMOD2004
Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
1N3070
CMDD2004
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
CPD80V
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CMOD2004
Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Text: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD80V
CMPD2003
CMPD2004
CMPD2005
1N3070
CMDD2004
CMSD2004
CMOD2004
CMXD2004
CMLD2004
CMOD2004
CPD80V
CMDD2004
1N3070
CMLD2004
CMPD2003
CMPD2004
CMSD2004
CMXD2004
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Untitled
Abstract: No abstract text available
Text: FEATURES 1N3070- 1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-
1N3070-1
500mW
100mA,
667mA/Â
MILPRF-19500/169
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DIODE 1N3070
Abstract: 1N307 1N3070 JANTX 1N3070-1
Text: FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:
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1N3070-1
1N3070-1
500mW
100mA,
667mA/
MILPRF-19500/169
DIODE 1N3070
1N307
1N3070 JANTX
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1N3064
Abstract: No abstract text available
Text: FEATURES 1N3064 • • • • • 1N3064 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS:
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1N3064
1N3064
MIL-PRF-19500/144
500mW
MILPRF-19500/144
100mA
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Untitled
Abstract: No abstract text available
Text: ttSe.mi-Gonducto'L ZPioduat*., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 FEATURES 1N3064 • • • • • 1N3064 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION
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1N3064
500mW
10rnA,
100mA
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Untitled
Abstract: No abstract text available
Text: FEATURES • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 1N3070UR- 1 • • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:
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1N3070UR-1
1N3070UR-
LL3070
500mW
100mA,
667mA/Â
MILPRF-19500/169
DO-213AA
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1N3016B-1
Abstract: 1N3044B1 1N3029B-1
Text: 1N3016B-1 – 1N3045B-1 Available on commercial versions 1 Watt Glass Case Zener Diodes Qualified per MIL-PRF-19500/115 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This well established Zener diode series for the 1N3016B-1 through 1N3045B-1 JEDEC
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1N3016B-1
1N3045B-1
MIL-PRF-19500/115
1N3016B-1
1N3045B-1
DO-41
1N3821
1N3828
1N3044B1
1N3029B-1
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1N3070UR-1
Abstract: DO-213AA
Text: FEATURES 1N3070UR-1 • 1N3070UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL3070 MAXIMUM RATINGS AT 25 °C Operating Temperature:
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1N3070UR-1
1N3070UR-1
LL3070
500mW
100mA,
667mA/
MILPRF-19500/169
DO-213AA
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1N3025BUR1
Abstract: do-213ab solder PAD DIMENSIONS
Text: 1N3016BUR-1 – 1N3045BUR-1 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV 1 Watt Surface Mount Zener Diodes Qualified per MIL-PRF-19500/115 DESCRIPTION This surface mountable Zener diode series is similar to the 1N3016B-1 through 1N3045B-1
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1N3016BUR-1
1N3045BUR-1
MIL-PRF-19500/115
1N3016B-1
1N3045B-1
DO-13
DO-213AB
1N3821AUR-1
T4-LDS-0285-1,
1N3025BUR1
do-213ab solder PAD DIMENSIONS
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1N301B
Abstract: No abstract text available
Text: lerisu4j £s.m.l-(londu.cioi ^Pioaucti, Unc. C7 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SILICON JUNCTION DIODE TYPE Th« 1N301, 1N301A and the 1N301B ore hermetically sealed silicon junction diodes designed for
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1N301,
1N301A
1N301B
1N301A
N301B
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1N3070
Abstract: 1N3070 DIODE DATASHEET
Text: 1N3070 1N3070 DO-35 COLOR BAND DENOTES CATHODE Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 200 Units V IF AV IFSM Average Rectified Forward Current 500 mA Non-repetitive Peak Forward Surge Current
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1N3070
DO-35
1N3070
1N3070 DIODE DATASHEET
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1N3022B JANTX
Abstract: 1N3016 1N3016B 1N3016BUR-1 1N3051 1N3051B 1N3821 1N3830 JANTX1N3016B JANTXV1N3051B
Text: 1N3016B thru 1N3051B 1 WATT METAL CASE ZENER DIODES SCOTTSDALE DIVISION APPEARANCE This well established zener diode series for the 1N3016 thru 1N3051 JEDEC registration in the metal case DO-13 package provides a glass hermetic seal for 6.8 to 200 volts. It is also well suited for high-reliability
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1N3016B
1N3051B
1N3016
1N3051
DO-13
1N3821
1N3830
DO-13
1N3016B
1N3022B JANTX
1N3016BUR-1
1N3051
1N3051B
JANTX1N3016B
JANTXV1N3051B
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Untitled
Abstract: No abstract text available
Text: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)
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1N3064
1N4454
DO-35)
1N4532
DO-34)
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d918
Abstract: D938 TND903 TND907
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
d918
D938
TND903
TND907
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tnd903
Abstract: Allegro MicroSystems tnd 903 diode
Text: ALLEGRO MICROSYSTEMS INC 0S0433Ö OODbMDG QS3 • ALCR SERIES TND 'T - ^ V Z ^ f m DIODE ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density.
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0S0433Ã
14-pin
16-pin
1N3070
1N3595,
1N3600
1N4153,
1N4447
TND903
TND907
tnd903
Allegro MicroSystems tnd 903 diode
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ND921
Abstract: br 903
Text: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
1N4447
TND903
TND905
TND907
ND921
br 903
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FSA2501P
Abstract: FSA2501M FSA2500M FSA1410M MONOLITHIC DIODE ARRAYS FSA2501 MONOLITHIC DIODE ARRAYS fairchild 1n4307 1N3070 JANTX 1N4307 FA3310
Text: FAIRCHILD DIODES DIODES MATCHED DIODE ASSEMBLIES PLASTIC AND GLASS PACKAGES Number of Diodes Package Item VF Matching -55° C to +100° C Basic Diode ip Range AVp Specification mA mV 2 Moulded Pair (308) 2 Discrete Pair DO-7 or DO-35 4 Moulded Quad (310)
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DO-35
1n914
FA2310E
FA2310U
FA4310E
FA4310U
FA3310
1N3070
FA2320E
FSA2501P
FSA2501M
FSA2500M
FSA1410M
MONOLITHIC DIODE ARRAYS
FSA2501
MONOLITHIC DIODE ARRAYS fairchild 1n4307
1N3070 JANTX
1N4307
FA3310
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IN3070
Abstract: 1N3070 IN3070 diode DIODE 1N3070
Text: 1N3070 COMPUTER DIODE High Voltage Switching FEATURES • Metallurgical Bond • Planar Passivated • High Voltage • DO-35 Package DESCRIPTION This series offers M etallurgical Bonding and is specifically designed for high voltage applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C
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1N3070
DO-35
200mAdc
500mA
T-r-100
IN3070
1N3070
IN3070 diode
DIODE 1N3070
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diode 1n4
Abstract: 1N3064 1N3604 IN3064 1N44S 1N4451 1N4454 1N4454-1 UNITRODE DIODE 240
Text: COMPUTER DIODE JAN & JANTX 1N3064 JAN, JANTX & JANTXV 1N4454 JAN, JANTX & JANTXV 1N4454-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/144 • Planar Passivated Chip • DO-7 or DO-35 Package • Non-JAN Available
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1N3064
1N4454
1N4454-1
MIL-S-19500/144
DO-35
diode 1n4
1N3604
IN3064
1N44S
1N4451
1N4454-1
UNITRODE DIODE 240
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TND908
Abstract: tnd903
Text: DIODE ARRAYS T h e T N D se rie s c o n sists of diode arrays pa cka ge d in 14-pin and 16-pin dual in-line plastic p a ck a g e s for e a s y autom atic insertion and better printed circuit board density. In addition to the diod e c h aracteristics for standard products
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OCR Scan
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PDF
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14-pin
16-pin
1N3070,
1N3595,
1N3600,
1N4153,
TND903
TND908
TND918
TND933
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1N4939
Abstract: 1N4938 1N3070 1N4938 JANTX
Text: COMPUTER DIODE 1N3070; JAN, JANTX 1N3070 1N4938; JAN, JANTX 1N4938 Switching ABSOLUTE MAXIMUM RATINGS, AT 25«C FEATURES Reverse Breakdown Voltage . 2 0 0 V Steady-State Forward Current at or below 25°C Free Air T em p era tu re.1 5 0 m A
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1N3070;
1N3070
1N4938;
1N4938
175Vdc
100/yAdc
1N3070
1N4939
1N4938
1N4938 JANTX
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1N3062
Abstract: No abstract text available
Text: Silicon Switching Diode 1N3062 I b 0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. D O -35 G la ss P ackage Features Lead Dia. 0.018-0.022" ► Six sigma quality
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1N3062
LL-34/35
031-A
1N3062
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