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Abstract: No abstract text available
Text: 1N6392 Qualified Levels: JAN, JANTX, and JANTXV Schottky Barrier Rectifier Available on commercial versions Qualified per MIL-PRF-19500/554 DESCRIPTION This schottky barrier diode provides low forward voltage and offers military grade qualifications for high-reliability applications. This rugged DO-213AA rectifier is ideal for extreme
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1N6392
MIL-PRF-19500/554
DO-213AA
DO-213AA
FED-STD-H28,
T4-LDS-0053,
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19500/554
Abstract: 1N6392 JANTX 1N6392
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
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MIL-PRF-19500/554
1N6392
T4-LDS-0053
19500/554
1N6392 JANTX
1N6392
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FED-STD-H28 chamfer
Abstract: FED-STD-H28 1N6392
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
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MIL-PRF-19500/554
1N6392
T4-LDS-0053
FED-STD-H28 chamfer
FED-STD-H28
1N6392
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1N6392
Abstract: FED-STD-H28
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com HIGH RELIABILITY SCHOTTKY RECTIFIER Qualified per MIL-PRF-19500/554 DEVICES LEVELS 1N6392 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
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MIL-PRF-19500/554
1N6392
T4-LDS-0053
1N6392
FED-STD-H28
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1N6392
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INCH-POUND MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,
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MIL-PRF-19500/554E
MIL-PRF-19500/554D
1N6392,
MIL-PRF-19500.
1N6392
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1N6392
Abstract: IRFP460 application 40HFL40S02 DO-203AB IRFP460 diode 1n6392 PD-2080
Text: PD-2.080 rev. B 12/97 1N6392 SCHOTTKY RECTIFIER 60 Amp Description/Features Major Ratings and Characteristics Characteristics 1N6392 Units IF AV Rectangular 60* A 45* V waveform VRWM The 1N6392 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier
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1N6392
1N6392
IRFP460
40HFL40S02
IRFP460 application
40HFL40S02
DO-203AB
IRFP460
diode 1n6392
PD-2080
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1N6392
Abstract: 40HFL40S02 DO-203AB IRFP460
Text: Bulletin PD-2.080 rev. C 11/02 1N6392 60 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics The 1N6392 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction
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1N6392
O-203AB
1N6392
IRFP460
40HFL40S02
40HFL40S02
DO-203AB
IRFP460
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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DSASW00264742
Abstract: NiH2 battery 1N5816 1N6392 1N5816 diode
Text: Fall 1998/Winter 1999 Low Cost, Thermally Activated Bypass Switch for NiH2 Cells used in Spacecraft Batteries by Fernando Lynch, New Business Manager, Microsemi Corporation - Santa Ana Division ABSTRACT This paper will review a Microsemi invention designed to protect the
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1998/Winter
Typically15.
ESPC-98.
DSASW00264742
NiH2 battery
1N5816
1N6392
1N5816 diode
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SCR gate drive circuit
Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
SCR gate drive circuit
an 80771
IN1190A diode
20509
Diode 31DQ
HFA25TB60
SD400N
IR 31DQ 03
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1N1183
IN1190
1N1183A
IN1190A
1N1199A
1N1206A
1N2054
1N2068
1N3085
-1N3092
IN1190A diode
an 80771
hfa30pa60
SCR gate drive circuit
A6F diode
HFA120FA60
HF50A060
DT93-1
HFA16PB120
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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1n6392
Abstract: No abstract text available
Text: 2 ÖE D TELEDYNE COMPONENTS • 0^ 17^02 ü ü ü h b a a i SS T -Q l-l\ POWER SCHOTTKY DIODE Ä'i.ÄVi.'.'.ViV •’S’n-YNVvftS' - N - ri'.'AiVi'i'.'iV. .«¿Ä'V'i'.'tVii» 50A peak, 45V 1N6392 JAN, JANTX, JANTXV pending Jâ .a Ä ü 1 .Sì < & .vi 'S
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1N6392
MIL-S-19500/554
1N6392
547-6m
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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60HQ100
Abstract: JANTX1N6392
Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
60HQ100
JANTX1N6392
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1N6392
Abstract: 1N6392 JANTX
Text: POWER SCHOTTKY RECTIFIERS » TX JANTXV FEATURES • Very Low Forward Voltage 0.6 at 60A, 125°C DESCRIPTION The 1N6392 Schottky barrier power recti • L o w R e c o v e r e d C h a rg e f ie r ¡3 i d e a ll y s u i t e d f o r o u t p u t r e c tifie rs
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M1L-S-19500/554
1N6392
1N6392 JANTX
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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