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    DIODE 250V 250MA Search Results

    DIODE 250V 250MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 250V 250MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMZ5945B

    Abstract: No abstract text available
    Text: DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC 4364 surge stopper with ideal diode in a 12V, 1A application. DC inputs of up to 80V and transients to 250V are limited to just 28.7V at the output. Sagging and reverse-polarity


    Original     		PDF DC2027A LTC4364HDE-1, ISO-7637-2 dc2027af CMZ5945B

    Untitled

    Abstract: No abstract text available
    Text: CRD1615-8W CRD1615-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1615-8W reference design demonstrates the performance of the CS1615 single stage dimmable AC/DC LED driver IC with a 250mA output driving 10  LEDs in


    Original     		PDF CRD1615-8W CRD1615-8W CS1615 250mA 108VAC 132VAC CS1615 150kHz

    Untitled

    Abstract: No abstract text available
    Text: LTC3638 High Efficiency, 140V 250mA Step-Down Regulator Features n n n n n n n n n n Wide Operating Input Voltage Range: 4V to 140V Internal Low Resistance Power MOSFET No Compensation Required Adjustable 20mA to 250mA Maximum Output Current Low Dropout Operation: 100% Duty Cycle


    Original     		PDF LTC3638 250mA 3990/LT3990-3 LT3990-5 350mA DFN10, MSOP10 LTC3891 QFN20,

    ups 500va 220v 50hz circuit diagram

    Abstract: 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646
    Text: Automation Controls Group Catalog Control Panel Relays Safety Relays Interface Terminal Automation Controls Group Catalog 2010-2011 panasonic-electric-works.net/ac Control Panel Relays¥Safety Relays¥Interface Terminal 2010-2011 Please contact .


    Original     		PDF ASCT1B382E 201004-3YT ups 500va 220v 50hz circuit diagram 230v ac to 12v dc without transformer circuit 220V AC 12V DC regulated switching schematic diagram 48v dc motor speed controller TRANSISTOR SMD 58W dc 220v motor speed control circuit with scr Fuse RH A4 2A 250V OMRON C200H relay 5 pin 12v 6a ujt 2646

    Diode 200mA

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-123 Package Weight mg 10 Product Group Type No. SD101AW – SD101CW 1N5711W BAT42W – BAT43W MMSD301 MMSD701 SD103AW – SD103CW SS0520 – SS0540 SS1040 1N4148W 1N4151W


    Original     		PDF OD-123 SD101AW SD101CW 1N5711W BAT42W BAT43W MMSD301 MMSD701 SD103AW SD103CW Diode 200mA

    RB751V-40

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-323 Product Group Type No. SD101AWS – SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS / BAT43WS BAT54HS / BAT54WS MMDL301 BAS40WS MMDL770 1SS404


    Original     		PDF OD-323 SD101AWS SD101CWS RB751V-40 BAS70WS 1SS357 RB501V-40 MMDL101 MMBD717WS BAT42WS RB751V-40

    diode switching

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-23 Package Weight mg 8 Product Group Type No. MMBD352 – MMBD355 BAS70 / A / C / S DAN217, DAP202, DAN202 MMBD101 MMBD717 / A / C / S BAT54 / A / C / S MMBD301 BAS40 / A / C / S


    Original     		PDF OT-23 MMBD352 MMBD355 BAS70 DAN217, DAP202, DAN202 MMBD101 MMBD717 BAT54 diode switching

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    irfp244a

    Abstract: L014A
    Text: IRFP244A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VDS= 250V


    OCR Scan     		PDF IRFP244A irfp244a L014A

    VQA 13

    Abstract: IRF634A
    Text: ERF634A Advanced Power MOSFET FEATURES b vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS= 250V ■ - 250 V


    OCR Scan     		PDF ERF634A IRF634A VQA 13 IRF634A

    Untitled

    Abstract: No abstract text available
    Text: ERFS644A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VM = 250V


    OCR Scan     		PDF ERFS644A IRFS644A

    DD313

    Abstract: IRFS614A
    Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ sv DSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 M A{M ax. @ VDS = 250V


    OCR Scan     		PDF IRFS614A DD313 IRFS614A

    Untitled

    Abstract: No abstract text available
    Text: IRF654A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS = 250V B V dss = 250 V


    OCR Scan     		PDF IRF654A

    Untitled

    Abstract: No abstract text available
    Text: SFW/I9614 Advanced Power MOSFET FEATURES BVdss = -250 V • ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA Max. @ VDS= -250V


    OCR Scan     		PDF -250V SFW/I9614

    a2724

    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 3 4 FEATURES B V dss = - 2 5 0 V • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VOS = -250V


    OCR Scan     		PDF -250V 0Q4D11S SFW/I9634 GD4D117 a2724

    irfs654a

    Abstract: VM-50V
    Text: IRFS654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VOS= 250V


    OCR Scan     		PDF IRFS654A O-22QF irfs654a VM-50V

    RC435

    Abstract: No abstract text available
    Text: SFW/I9624 Advanced Power MOSFET FEATURES BV dss = -250 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VOS = -250V


    OCR Scan     		PDF -250V SFW/I9624 RC435

    Untitled

    Abstract: No abstract text available
    Text: SFH9244 A d v a n c e d Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA Max. @ VDS= -250V


    OCR Scan     		PDF -250V SFH9244

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U2 1 4 A Advanced Power MOSFET FEATURES BV0SS = 250 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gale Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area m Lower Leakage Current : 10 nA Max. @ VD8= 250V


    OCR Scan     		PDF FR/U214A IRFR/U214A

    dts25

    Abstract: l79A FS5F IRFS644a
    Text: IRFS644A Advanced Power MOSFET FEATURES BV,OSS = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 jaA M ax. @ ■ ^DS(on) " 0 28


    OCR Scan     		PDF IRFS644A -220F dts25 l79A FS5F IRFS644a

    diode t96

    Abstract: No abstract text available
    Text: SFS9614 Advanced Power MOSFET FEATURES BV,DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on “ 4.0 Q ■ Lower Input Capacitance In = -1.27 A ■ Improved Gate Charge ■ ■ Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ Vds = -250V


    OCR Scan     		PDF -250V SFS9614 diode t96

    p-channel 250V 16A power mosfet

    Abstract: No abstract text available
    Text: SFP9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10pA Max. @ VOS= -250V


    OCR Scan     		PDF -10pA -250V SFP9614 200nF 300nF p-channel 250V 16A power mosfet

    Untitled

    Abstract: No abstract text available
    Text: IR F W /K 1 4 A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = 2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A Max. @ VM = 250V


    OCR Scan     		PDF IRFW/I614A

    Untitled

    Abstract: No abstract text available
    Text: IRFR/U214A A d van ced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current ; 10 Li A Max. @ VOS = 250V


    OCR Scan     		PDF IRFR/U214A