RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
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2 Wavelength Laser Diode
Abstract: SLD326YT SLD326YT-1 SLD326YT-2 SLD326YT-21 SLD326YT-24 SLD326YT-3 2A510
Text: SLD326YT 4W High Power Laser Diode Description The SLD326YT has a compatible package, and allows independent thermal and electric design. It is a high power laser diode that affords easy optical design. M-288 Features • High-optical power output Recommended optical power output: PO = 4.0W
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SLD326YT
SLD326YT
M-288
W/400
2 Wavelength Laser Diode
SLD326YT-1
SLD326YT-2
SLD326YT-21
SLD326YT-24
SLD326YT-3
2A510
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switching transistor msd
Abstract: Mil-R-39016/11 tyco mil relay
Text: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE
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MIL-R-39016/11
MIL-R-39016/16
MIL-R-39016/21
MIL-R-28776/3
switching transistor msd
Mil-R-39016/11
tyco mil relay
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are
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NX5522
R08DS0029EJ0100
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ST tvs diode sma
Abstract: BP317 BZG142 BZG142-68 philips zener diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BZG142 SMA ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification SMA ZenBlockTM; zener with integrated blocking diode
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M3D168
BZG142
DO-214AC
MGU215
DO-214AC)
613510/01/pp8
ST tvs diode sma
BP317
BZG142
BZG142-68
philips zener diode
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BAP64-02
Abstract: BP317 MGL857
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification Supersedes data of 1999 Jun 16 1999 Sep 21 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 FEATURES PINNING • High voltage, current controlled
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M3D319
BAP64-02
MAM405
OD523)
OD523
125004/04/pp8
BAP64-02
BP317
MGL857
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WLD3343
Abstract: WTW002 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640
Text: WLD3343 General Purpose Driver for Laser Diodes Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained, high-power laser diode applications. The WLD3343 maintains precision laser diode current constant current mode
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WLD3343
WLD3343
4-Aug-08
31-Aug-09
WLD3343-00400-A
WTW002
1k trimpot vertical
LM4040
WHS302
WHS320
WHY5640
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BAV74LT1
Abstract: No abstract text available
Text: ON Semiconductort Monolithic Dual Switching Diode BAV74LT1 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 50 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic
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BAV74LT1
236AB)
r14525
BAV74LT1/D
BAV74LT1
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WLD3343
Abstract: 1k trimpot vertical LM4040 WHS302 WHS320 WHY5640 Demo Laser Technology 50k trimpot vertical 10 pin laser diode
Text: WLD3343 HB General Purpose Driver for Laser Diodes Warning: This is a Low Voltage Device Pb FEATURES: GENERAL DESCRIPTION: The WLD3343 is an easy-to-use analog circuit for space contstrained laser diode applications. The WLD3343 maintains precision laser diode
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WLD3343
Apr-07
31-Aug-09
WLD3343HB00400A
1k trimpot vertical
LM4040
WHS302
WHS320
WHY5640
Demo Laser Technology
50k trimpot vertical
10 pin laser diode
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10 gb laser diode
Abstract: NX8566LE NX8560MC Series bfy 421
Text: DATA SHEET LASER DIODE NX8564/8565/8566LE Series EA MODULATOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS DESCRIPTION The NX8564/8565/8566LE Series is an Electro-Absorption EA modulator
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NX8564/8565/8566LE
NX8564LE-BC/CC)
10 gb laser diode
NX8566LE
NX8560MC Series
bfy 421
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU60C6SDPK-M0 Single Diode Fast Recovery Diode R07DS0378EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = −100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 50 A)
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RJU60C6SDPK-M0
R07DS0378EJ0100
PRSS0004ZH-A
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RJU4351SDPE
Abstract: No abstract text available
Text: Preliminary Datasheet RJU4351SDPE 430V - 10A - Single Diode Ultra Fast Recovery Diode R07DS1063EJ0200 Rev.2.00 Apr 26, 2013 Features • Ultra fast reverse recovery time: trr = 23 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)
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RJU4351SDPE
R07DS1063EJ0200
PRSS0004AE-B
RJU4351SDPE
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RJU4351SDPE
Abstract: No abstract text available
Text: Preliminary Datasheet RJU4351SDPE 430V - 10A - Single Diode Ultra Fast Recovery Diode R07DS1063EJ0100 Rev.1.00 Mar 05, 2013 Features • Ultra fast reverse recovery time: trr = 23 ns typ. at IF = 10 A, di/dt = 100 A/s Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)
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RJU4351SDPE
R07DS1063EJ0100
PRSS0004AE-B
RJU4351SDPE
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg
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RJU60C6WDPK-M0
R07DS0875EJ0100
PRSS0004ZH-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU60C2TDPP-EJ Single Diode Fast Recovery Diode R07DS0374EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 70 ns typ. at IF = 5 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)
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RJU60C2TDPP-EJ
R07DS0374EJ0100
PRSS0002ZA-A
O-220FP-2L)
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KB-2885SGD
Abstract: 2885SG
Text: 8.89mmx19.05mm LED LIGHT BAR Part Number: KB-2885SGD SUPER BRIGHT GREEN Features zUNIFORM zLOW Description LIGHT EMITTING AREA. The Super Bright Green source color devices are made with CURRENT OPERATION. Gallium Phosphide Green Light Emitting Diode. zEASILY
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89mmx19
KB-2885SGD
DSAA9268
APR/07/2007
KB-2885SGD
2885SG
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0070EJ0100 Rev.1.00 Jun 20, 2013 DESCRIPTION The NV4V31SF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW . The NV4V31SF can provide excellent linearity from low to
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NV4V31SF
R08DS0070EJ0100
NV4V31SF
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NV4V31MF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0045EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 175 mW CW at up to 85°C. The NV4V31MF can provide excellent linearity
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NV4V31MF
R08DS0045EJ0200
NV4V31MF
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Hitachi DSA0095
Abstract: DP-14 FP-14DA FP-14DN HD74HCU04A TTP-14D
Text: HD74HCU04A Hex Inverters ADE-205-288 Z 1st. Edition Jun. 1999 Description The HD74HCU04A has six inverters in a 14 pin package. Y = A Features • VCC = 4.5 to 5.5 V operation • Input terminal has protection diode Function Table Input A Output Y H L L
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HD74HCU04A
ADE-205-288
HD74HCU04A
Hitachi DSA0095
DP-14
FP-14DA
FP-14DN
TTP-14D
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EY81
Abstract: diode V6 81 PY81 philips tubes max 5000 TELEVISION BOOSTER
Text: PHILIPS E Y 81 BOOSTER DIODE for time base circuits in television re ceivers DIODE SURVOLTEUSE pour les circuits base de temps de récepteurs de télévision SPANNUNGSERHÖHERDIODE BOOSTER f.ür Zeitbasisstromkreise in Fernsehempfängern Heating : indirect; parallel supply
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F5LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode O U T L IN E SF5LC40 Weight 1.9« T yp 10 o ^ * !> X W ) 400V 5A Date code Feature Control No. •i& y 'fx • Low Noise • trr=50ns • tnr=50ns • 711^-10 K • Full Molded am*} • Dielectric Strength 2kV 2kV ( S II
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SF5LC40
F5LC40
110ms
J533-1)
F5LC40
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Untitled
Abstract: No abstract text available
Text: Si GEC PL E S S E Y S I M I C O N D U C T O R S DS4148-3.3 MDFB51 FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 2500V 2212 A ! f AV 24000A FSM 1000|iC Q . V RRM Freewheel Diode. ■ D.C. Motor Drives. ■ Welding. ■ High Frequency Rectification.
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DS4148-3
MDFB51
4000A
003D13Ã
37bfiS2S
37bB522
D03D1MD
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode W tm OUTLINE D8LC20UR 200V 8A Feature • m s 'ix • trr= 35ns • • Low Noise • trr=35ns • Full Molded 7 [Æ - JU K Main Use • Sw itching Regulator • Fly Wheel • 8 < B , O A , PsBfl • Hom e Appliance, Office Automation, Lighting
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D8LC20UR
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aa 118 diode
Abstract: 05nm5
Text: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3
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S60SC6M
J515-5
aa 118 diode
05nm5
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