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Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
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Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U20UC30 Preliminary DIODE 20A DIODE DESCRIPTION The UTC U20UC30 is a 20A diode, it uses UTC’s advanced technology to provide the customers with low forward voltage drop and fast switching capability. FEATURES * Low forward voltage drop
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U20UC30
U20UC30
U20UC30L-TA3-T
U20UC30G-TA3-T
U20UC30L-TF3-T
U20UC30G-TF3-T
O-220
O-220F
U20alues
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BCS028N06NS
Abstract: 028N06NS DC1502
Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a
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DC1502A
LTC4359HDCB
2V/20A
LTC4359
dc1502af
BCS028N06NS
028N06NS
DC1502
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Untitled
Abstract: No abstract text available
Text: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SRDA3.3 Series SRDA3.3 Series 8pF 35A Diode Array RoHS Pb GREEN The SRDA3.3 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect I/O pins against ESD and lightning induced surge events. This device can
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IEC61000-4-5
IEC61000-4-2
IEC61000-4-5,
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UM9441 UM9442
Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9441 UM9442
UMM5050
NKT 0039
HUM4020
NTE Semiconductor Technical Guide and Cross Refer
wireless mobile charging through microwaves
MSC 9415
hf power combiner broadband transformers
mpd101
Structure rotary phase shifter
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UM9442
Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Text: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of
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MPD-101A
UM9442
UMM5050
MSC 9415
pin diodes radiation detector
MSC 501 302 diode
PIN DIODE DRIVER CIRCUITS
"Microwave Diode"
UM9441
Microwave PIN diode
hf power combiner broadband transformers
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transistor lt 2815
Abstract: No abstract text available
Text: LTC4085 USB Power Manager with Ideal Diode Controller and Li-Ion Charger DESCRIPTION FEATURES n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter 215mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Provide Low Loss PowerPath
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LTC4085
500mA/100mA)
LTC4055
QFN16
LTC4066
QFN24
4085fd
transistor lt 2815
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FS50R06W1E3
Abstract: SF92 rf 6z
Text: Technische Information / technical information FS50R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC * + , -
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FS50R06W1E3
FS50R06W1E3
SF92
rf 6z
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2KV DIODE
Abstract: No abstract text available
Text: 2T2K 2KV Diode, Axial Leaded Standard Recovery Rectifier Diode POWER DISCRETES Description - PRELIMINARY Features Quick reference data Low reverse leakage current Hermetically sealed. Good thermal shock resistance Low forward voltage drop Metallurgically bonded, CAT 1 bond.
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Text: SEMICONDUCTOR PG2.8CUS23 TECHNICAL DATA Low Voltage EPD TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・EPD Enhanced Punch-Through Diode Structure. ・400 Watts peak pulse power (tp=8/20 s)
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8CUS23
5/50ns)
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Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.
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CPDVR083V3UA
IEC61000-4-2
OT-383F
OT-383F
MIL-STD-750
QW-A7029
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA RoHS Device Features - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). - Working voltage: 3.3V SOT-383F 0.086(2.20) 0.079(2.00) - Low leakage current. - Low operating and clamping voltages.
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CPDVR083V3UA
IEC61000-4-2
OT-383F
OT-383F
MIL-STD-750
QW-A7029
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA-HF RoHS Device Halogen Free Features SOT-383F - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) - Working voltage: 3.3V - Low leakage current. 0.067(1.70) 0.059(1.50)
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CPDVR083V3UA-HF
OT-383F
IEC61000-4-2
OT-383F
MIL-STD-750
QW-G7023
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDF3V3UP-HF RoHS Device Halogen Free Features 1005/SOD-323F - Working voltage: 3.3V 0.102 2.60 0.095(2.40) - Low leakage current. - Low operating and clamping voltages. 0.051(1.30) 0.043(1.10) Mechanical data
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1005/SOD-323F
1005/SOD-323F
MIL-STD-750
QW-G7043
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDVR083V3UA-HF RoHS Device Halogen Free Features SOT-383F - IEC61000-4-2 ESD ±15kV(Contact),±20kV(Air). 0.086(2.20) 0.079(2.00) - Working voltage: 3.3V - Low leakage current. 0.067(1.70) 0.059(1.50)
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CPDVR083V3UA-HF
OT-383F
IEC61000-4-2
OT-383F
MIL-STD-750
QW-G7023
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Untitled
Abstract: No abstract text available
Text: Comchip SMD ESD Protection Diode SMD Diode Specialist CPDF3V3UP-HF RoHS Device Halogen Free Features 1005/SOD-323F - Working voltage: 3.3V 0.102 2.60 0.095(2.40) - Low leakage current. - Low operating and clamping voltages. 0.051(1.30) 0.043(1.10) Mechanical data
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1005/SOD-323F
1005/SOD-323F
MIL-STD-750
OD-323F)
QW-G7043
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Untitled
Abstract: No abstract text available
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
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MXP4000
1310nm
1550nm
MXP4000
MXP400x
00E-11
00E-12
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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M2FL20U
Abstract: smd diode A4 CJ532 smd marking fy
Text: Super Fast Recovery Diode Single Diode OUTLINE Package I M2F m tm M2FL20U yby - F - y - ? 200V 1.5A < Type C ath o d e m a rk T Feature • /JvPSMD • S m all SM D • fîy - fX ' • Low N oise • trr=35ns • <SVf=0.92V • trr= 35n s Ì 2U 171 No.
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M2FL20U
i50Hz
M2FL20U
smd diode A4
CJ532
smd marking fy
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diode marking DL
Abstract: marking DL diode KDZ6.2DU
Text: SEM ICO NDUCTO R TECHNICAL DATA KDZ6.2DU ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. WAVE FORM CLIPPER FEATURES • Small Package : USQ • Sharp breakdown characteristic • Normal Voltage Tolerance about ± 2 % .
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20x20mm
diode marking DL
marking DL diode
KDZ6.2DU
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PD15-22C
Abstract: IS09001
Text: EV/ERLIGHT IS09001 QS9000 APPROVED Subminiature Clear State Photo Diode PD15-22C Features: • HIGH PHOTO SENSITIVITY. • FAST RESPONSE TIMES. • SMALL JUNCTION CAPACITANCE. Descriptions: PD15-22C is a high speed and highly sensitive PIN photo diode in a flat
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IS09001
QS9000
PD15-22C
PD15-22C
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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