FMN-G12S
Abstract: fmng12 fmng12s
Text: SANKEN ELECTRIC CO., LTD. FMN-G12S 1. Scope The present specifications shall apply to Sanken silicon diode, FMN-G12S. 2. Outline 030225 Type Silicon Diode Structure Resin Molded Applications Pulse Rectification，etc. Flammability: UL94V-0 Equivalent 1／4
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FMN-G12S
FMN-G12S.
UL94V-0
10msec.
FMNG12
FMN-G12S
fmng12
fmng12s
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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TC1617
Abstract: TCM1617MQR 200B TCM1617 TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TCM1617 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TCM1617
TCM1617
TCM1617-1
DS21485A
TC1617
TCM1617MQR
200B
TCM1617EV
TCN75
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200B
Abstract: TC1068 TC1068MQR TCM1617EV TCN75
Text: EVALUATION KIT AVAILABLE TC1068 SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ The TC1068 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Temperature data is converted from the CPU’s thermal diode outputs
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TC1068
TC1068
TC1068-1
DS21352A
200B
TC1068MQR
TCM1617EV
TCN75
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200B
Abstract: DK-2750 TC1066 TC1066MQR TCM1617EV TCN75 HIGHWAY 09 16PIN IC PIN DIAGRAM
Text: EVALUATION KIT AVAILABLE TC1066 *Patent Pending ACPI-Compliant SMBus Thermal Sensor with External Diode Input FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature sensor optimized for monitoring modern high performance
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TC1066
TC1066
TC1066-1
DS21351A
200B
DK-2750
TC1066MQR
TCM1617EV
TCN75
HIGHWAY 09 16PIN IC PIN DIAGRAM
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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3225 K50
Abstract: D4401N D660N D748N D1029N D2209N D2659N
Text: M2 - Schaltung ~ M2K ~ Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 300 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode
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D748N
D660N
D1029N
D2209N
184K0
3225 K50
D4401N
D660N
D748N
D1029N
D2209N
D2659N
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74F253
Abstract: IDTQS32253 LS253 QS32253
Text: IDTQS32253 HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH DUAL 4:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS32253
74F253,
74FCT253,
74FCT253T
QS32253
SO16-7)
SO16-1)
74F253
IDTQS32253
LS253
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Untitled
Abstract: No abstract text available
Text: Date:- 15 Apr, 2004 Data Sheet Issue:- 1 Rectifier Diode Types W2058LC020 to W2058LC140 Old Type No.: SW12CXC935 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200-1400 V VRSM Non-repetitive peak reverse voltage, (note 1)
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W2058LC020
W2058LC140
SW12CXC935
W2058LC140
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QS32257
Abstract: 74F257 74FCT257T IDTQS32257
Text: IDTQS32257 HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS32257
74F257,
74FCT257,
74FCT257T
QS32257
SO16-1)
SO16-7)
SO16-8)
74F257
74FCT257T
IDTQS32257
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Untitled
Abstract: No abstract text available
Text: IDTQS32257 HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS32257
74F257,
74FCT257,
74FCT257T
IDTQS32257
QS32257
74FCT25on
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74F257
Abstract: 74FCT257 QS32257
Text: IDTQS32257 HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX DESCRIPTION: FEATURES: − − − − − − − − Enhanced N channel FET with no inherent diode to Vcc
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IDTQS32257
74F257,
74FCT257,
74FCT257T
IDTQS32257
QS32257
74PEED
SO16-1)
74F257
74FCT257
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W2058LC
Abstract: sw12cxc935 W2058LC140 D-68623 W2058 w2058l
Text: Date:- 15 Apr, 2004 Data Sheet Issue:- 1 Rectifier Diode Types W2058LC020 to W2058LC140 Old Type No.: SW12CXC935 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 200-1400 V VRSM Non-repetitive peak reverse voltage, (note 1)
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W2058LC020
W2058LC140
SW12CXC935
W2058LC140
W2058LC
sw12cxc935
D-68623
W2058
w2058l
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100uF capacitor
Abstract: smd transistor 2a SANYO 100uf 10uf 25V capacitor 2.2uH inductor inductor 22uh Inductor 100uf 22uH SMD 603 capacitor smd 2a transistor
Text: STMicroelectronics: DC-DC EVAL6902D QTY 1 1 1 1 1 1 1 1 1 1 1 Reference Cin Cout Diode Inductor Device R1 R2 R3 C3 C4 Rsense May-07 Part Description 10uF 15% 25V ceramic capacitor 100uF 10V tantalum capacitor 2A 25V low drop power schottky rectifier 22uH inductor
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EVAL6902D
May-07
100uF
220pF
C3225X5R1E106M
10TPB100M
STPS2L25U
DO1813HC-223
L6902D
100uF capacitor
smd transistor 2a
SANYO 100uf
10uf 25V capacitor
2.2uH inductor
inductor 22uh
Inductor 100uf
22uH SMD
603 capacitor
smd 2a transistor
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PHILIPS SCR
Abstract: BYV1030 equivalent 1N270 diode equivalent
Text: AN763 Latch-Up Protection of CMOS ICs This emitter base junction of the parasitic bipolar is the parasitic diode that is also found in power MOSFETs. One of these diodes exists in every CMOS structure for both N- and P-channel devices; correspondingly, there exists a parasitic bipolar for every MOSFET
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AN763
sup00
DS00763A*
0763A-page
PHILIPS SCR
BYV1030 equivalent
1N270 diode equivalent
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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SN76670
Abstract: sn76003 SN76660 SN76640 SN7401 SN72747 SN76013 SN76630 SN72820 SN76001
Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type{$ listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a
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L2540
L2542
L2541
SN76670
sn76003
SN76660
SN76640
SN7401
SN72747
SN76013
SN76630
SN72820
SN76001
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