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    DIODE 40 S02 Search Results

    DIODE 40 S02 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 40 S02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power


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    PDF SLD433S4 SLD433S4 M-S027

    Si4842DY

    Abstract: S-02445
    Text: Si4842DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si4842DY S-02445--Rev. 06-Nov-00 S-02445

    Si4484EY

    Abstract: No abstract text available
    Text: Si4484EY New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.034 @ VGS = 10 V 6.9 0.040 @ VGS = 6.0 V 6.4 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si4484EY S-02110--Rev. 02-Oct-00

    SC-75

    Abstract: SC-75A SC-89 Si1032R Si1032X
    Text: Si1032R/X New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 1.5ĆV Rated FEATURES BENEFITS APPLICATIONS D D D D D D D D


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    PDF Si1032R/X SC-75A, Si1032R S-02970--Rev. 22-Jan-01 SC-75 SC-75A SC-89 Si1032X

    s0245

    Abstract: Si7844DP
    Text: Si7844DP New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) ID (A) rDS(on) (W) 30 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 D1 D1 D2 D2 PPAK S1 6.15 mm 5.15 mm 1 G1 2 S2 3 G1 G2 G2 4 D1 8 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET


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    PDF Si7844DP S-02456--Rev. 06-Nov-00 s0245

    IRFP460

    Abstract: MBR4045WT 035H B1201
    Text: Bulletin PD-20715 rev. B 12/01 MBR4045WT SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 45V Major Ratings and Characteristics Characteristics Description/Features Values Units 40 A IFRM @ TC = 125°C (Per Leg) 40 A VRRM 45 V IFSM @ tp = 5 µs sine 1020 A VF


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    PDF PD-20715 MBR4045WT 40Amp MBR4045WT an-01 O-247 IRFP460 035H B1201

    Untitled

    Abstract: No abstract text available
    Text: TPS40077 www.ti.com. SLUS714C – JANUARY 2007 – REVISED FEBRUARY 2009 HIGH-EFFICIENCY, MIDRANGE-INPUT, SYNCHRONOUS


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    PDF TPS40077 SLUS714C

    Si5475DC

    Abstract: S0233
    Text: Si5475DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.031 @ VGS = –4.5 V –7.6 0.041 @ VGS = –2.5 V –6.6 0.054 @ VGS = –1.8 V –5.8 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BF XX


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    PDF Si5475DC S-02332--Rev. 23-Oct-00 S0233

    Si4701DY

    Abstract: No abstract text available
    Text: Si4701DY New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.015 @ VGS2 = 10 V 7.0 0.021 @ VGS2 = 4.5 V 6.0 5, 6, 7 3, 4 VIN SO-8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN S2 Q2 8 VHV Q1 2 VON/OFF


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    PDF Si4701DY S-02650--Rev. 27-Nov-00

    Si4726CY

    Abstract: s02222 Si4726
    Text: Si4726CY New Product Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D D D D 4.5- to 20-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30 ns typ. 20-V MOSFETs High Side: 0.0135 W @ VDD = 4.5 V


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    PDF Si4726CY S-02222--Rev. 09-Oct-00 s02222 Si4726

    CLASS II LASER

    Abstract: DME 40 indicator 3000-211S02 Profibus circuit diagram rxq1 3000-211P02
    Text: DME 3000-1 Reflex Highlights Distance Sensors • Visible red light for easy alignment DC RED 0.3.1640 ft 0.1.500 m sensing range • Two programmable discrete outputs (invertible) • Super-long distance measurement with a reflector • Plausibility and service outputs


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    diode 40 S02

    Abstract: No abstract text available
    Text: 1N3879 R , 1N3889(R), 6/12/16FL(R) Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 6/12/16 A FEATURES • Short reverse recovery time RoHS • Low stored charge COMPLIANT • Wide current range • Excellent surge capabilities • Standard JEDEC types


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    PDF 1N3879 1N3889 6/12/16FL DO-203AA 1N3879. 1N3883. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. diode 40 S02

    SILICONIX 2N7002

    Abstract: 2N7002 2N7002K s0246 2n7002 siliconix
    Text: 2N7002K New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 2 @ VGS = 10 V 300 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,


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    PDF 2N7002K O-236 OT-23 2N7002 S-02464--Rev. 25-Oct-00 SILICONIX 2N7002 2N7002 2N7002K s0246 2n7002 siliconix

    ss125 transistor

    Abstract: ss125
    Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92


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    PDF SS125 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 ss125 transistor ss125

    semiconductor sensors

    Abstract: No abstract text available
    Text: Temic U6229B S e m i c o n ü u c tors DC/DC Converter - Power Supply 28 V Description The U6229B is a multifunctional power supply IC which provides four different voltages dedicated to supply components o f complex microcontroller systems. Supplied by a battery voltage in the wide range from 6V


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    PDF U6229B U6229B D-74025 21-Apr-99 semiconductor sensors

    Untitled

    Abstract: No abstract text available
    Text: 5 bE J> 7 ^ 2 3 7 OOHOmT SGS-THOMSON ¡y BS4 • S f iT l S G S-THOMSON M54HC356 M74HC356 8-CHANNEL MULTIPLEXER/REGISTER WITH LATCHES 3-STATE HIGH SPEED tpD = 29 ns (TYP.) at VCc = 5V LOW POWER DISSIPATION |cc = 4 pA (MAX.) at TA = 25°C HIGH NOISE IMMUNITY


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    PDF M54HC356 M74HC356 54/74LS356 M54/74HC356 M54/74HC356 7T2T237

    74AC244

    Abstract: No abstract text available
    Text: S G S -T H O M S O N [M0 g[3 l[L[iera®*S 74AC 244 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED . . . . . . HIGH SPEED: tPD = 4 ns (TYP.) a tV c c = 5V LOW POWER DISSIPATION: Ice = 8 jjA (MAX.) at TA = 25 °C HIGH NOISE IMMUNITY: V nih = V nil = 2 8 % V c c (MIN.)


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    PDF 74AC244B 74AC244M AC244 P001J 74AC244 P013L 74AC244

    74AC244

    Abstract: No abstract text available
    Text: SGS-THOMSON [M O ig lM IIL iera *® 74A C 244 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON INVERTED . HIGH SPEED: tPD = 4 ns (TYP.) atVcc =5V . LOW POWER DISSIPATION: Ice = 8 |xA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 28% V cc (MIN.)


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    PDF 74AC244B 74AC244M AC244 P001J 74AC244 P013L 74AC244

    74AC245

    Abstract: No abstract text available
    Text: S G S -T H O M S O N [MOiglM&lieratgfflD 74AC245 OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS NON INVERTED . . . . . . . . . HIGH SPEED: tPD = 4.5 ns (TYP.) at Vcc = 5V LOW POWER DISSIPATION: Ice = 8 |oA (MAX.) at TA = 25 °C HIGH NOISE IMMUNITY: V nih = V nil = 28% Vcc (MIN.)


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    PDF 74AC245 AC245 P001J P013L 74AC245

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON [M O ig lM IIL iera *® 74A C 573 OCTAL D-TYPE LATCH WITH 3 STATE OUTPUT NON INVERTING . HIGH SPEED: tPD = 4.5 ns TYP. at Vcc = 5V . LOW POWER DISSIPATION: Ice = 8 |xA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 2 8 % V cc (MIN.)


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    PDF AC573 P001J 74AC573 P013L

    L6281

    Abstract: No abstract text available
    Text: L6201 - L6201P L6202 - L6203 Æ T SGS-THOMSON * l i . Oïtira IIIL[igra lii!lD gi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 ■ TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A


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    PDF L6201 L6201P L6202 L6203 L6201) L6203/L6201 G0b7b21 L6281

    s744

    Abstract: No abstract text available
    Text: Tem ic CQX19 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode with Metal Socket Description CQ X 19 is a high pow er G aA s infrared em itting diode in a special case, consisting o f a solid metal T O -5 header with a m olded clear plastic lens. This allow s the user to m ount the device on a heatsink and


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    PDF CQX19 15-Jul-% l5-Jul-96 s744

    74ACT374

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ 74A C T374 OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING . HIGHSPEED: fMAX=260 MHz (TYP.) at Vcc =5V . . . . . LOW POWER DISSIPATION: Icc = 8 |oA (MAX.) at T a = 2 5 °C COMPATIBLE WITH TTL OUTPUTS


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    PDF ACT374 P001J 74ACT374 P013L 74ACT374

    S14936DY

    Abstract: No abstract text available
    Text: Q IM O TD ^L [ F & E ^ S I Final Electrical Specifications u m TECHNOLOGY LTC1479 PowerPath C ontroller for Dual Battery Systems D ecem ber 1996 f€ATUA€S DCSCRIPTIOH • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup


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    PDF LTC1479 LTC1479 LT1511 LTC1538-AUX LT1620 LTC1435 LT1621 001447S S14936DY