smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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lt 5240
Abstract: GPS05094
Text: Addendum for PCN 2004-018-A BTS 5240 G Addendum for PCN-Datasheet 2004-018-A: BTS 5240 G This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.
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004-018-A
004-018-A:
5240G
2004-Mar-08
lt 5240
GPS05094
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ANSI/EOS
Abstract: BTS 330 Q67060-S6136 BTS5440G
Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2
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5440G
P-DSO-28
ANSI/EOS
BTS 330
Q67060-S6136
BTS5440G
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lt 5240
Abstract: BTS 5240 L Q67060-S6135
Text: Addendum for PCN 2004-018-A BTS 5240 L Addendum for PCN-Datasheet 2004-018-A: BTS 5240 L This Addendum and PCN-Datasheet refers to the PCN 2004-018-A: “Minor datasheet adaption for BTS 5240 L, BTS 5240 G, BTS 5440 G “. The PCN-datasheet attached will be valid starting from August 2004.
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004-018-A
004-018-A:
5240L
2004-Mar-08
lt 5240
BTS 5240 L
Q67060-S6135
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5240G
Abstract: No abstract text available
Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9
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5240G
P-DSO-20-1,
GPS05094
5240G
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GPS05094
Abstract: No abstract text available
Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9
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5240G
P-DSO-20-1,
2003-Oct-01
GPS05094
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Q67060-S6136
Abstract: BTS5440G
Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2
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5440G
P-DSO-28-19
2003-Oct-01
Q67060-S6136
BTS5440G
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Untitled
Abstract: No abstract text available
Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2
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5440G
P-DSO-28-19
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Untitled
Abstract: No abstract text available
Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6
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5240L
P-DSO-12-2
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Untitled
Abstract: No abstract text available
Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6
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5240L
P-DSO-12-2
2003-Oct-01
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Untitled
Abstract: No abstract text available
Text: BTS 5440G Smart High-Side Power Switch Four Channels: 4 x 25mΩ IntelliSense Package Product Summary Operating voltage Vbb on 4,5.28 V ( Loaddump: 40 V ) Active channels one four parallel On-state resistance RON 25 6.5 Nominal load current IL(nom) 6.2
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5440G
P-DSO-28-19
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Untitled
Abstract: No abstract text available
Text: BTS 5240L Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Package Product Summary Operating voltage V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 6
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5240L
P-DSO-12-2
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INFINEON PART MARKING BTS
Abstract: SCR gate Control IC GPS05094
Text: BTS 5240G Smart High-Side Power Switch Two Channels: 2 x 25mΩ IntelliSense Product Summary Operating voltage Package V bb on 4,5.28 V ( Loaddump: 40 V ) Active channels one two parallel On-state resistance RON 25 13 mΩ Nominal load current IL(nom) 5.9
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5240G
INFINEON PART MARKING BTS
SCR gate Control IC
GPS05094
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colour code diode zener
Abstract: BAR99 s790 FMMD6050 ZC830 diode marking code W5 diode marking x6 SOT-23 MARKING w5 W9 diode ZC830B
Text: H D 2A I FERRANTI HD3A nr 11semiconductors L H D 4A High Speed S w itching Diodes D ES C R IPTIO N These devices applications. are intend ed fo r high speed s w itch ing * Encapsulated in th e popular SOT-23 p ackage th e device is designed specifically fo r use in thin and th ic k film hybrid
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OT-23
C9/c20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
colour code diode zener
BAR99
s790
FMMD6050
ZC830
diode marking code W5
diode marking x6
SOT-23 MARKING w5
W9 diode
ZC830B
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ZC832A
Abstract: FMMD914 ZC830A ZC831A ZC833A ZC834A ZC835A ZC836A ZC836B ferranti
Text: i FERRANTI semiconductors ZC830A Series Silicon Variable Capacitance Diodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci
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ZC830A
OT-23
C9/C20
50MHz
ZC831A
ZC832A
ZC833A
FMMD914
ZC834A
ZC835A
ZC836A
ZC836B
ferranti
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FMMD6050
Abstract: Q953 diode marking code YF Z6 DIODE BAL99 BAR99 BAS16 BAV70 BZX84-C43 BZX84-C47
Text: FERRANTI 4 semiconductors FMMD6050 • High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid
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FMMD6050
OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
FMMD6050
Q953
diode marking code YF
Z6 DIODE
BAL99
BAR99
BAS16
BAV70
BZX84-C43
BZX84-C47
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FMMD6050
Abstract: E2 marking diode Diode Marking z3 SOT-23 BAR99 diode marking x6 Z6 DIODE BAL99 BAS16 SOT diode marking Z3 BAV74
Text: FERRANTI semiconductors BAL99 High Speed S w itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film
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BAL99
OT-23
BAL99
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
FMMD6050
E2 marking diode
Diode Marking z3 SOT-23
BAR99
diode marking x6
Z6 DIODE
BAS16
SOT diode marking Z3
BAV74
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MARKING YA SOT-23
Abstract: w56 transistor MARKING YA J3 SOT-23 ZC831 sot-23 marking YA Diode Marking z3 SOT-23 DIODE W7 BZX84C12 BAR99 BAS16
Text: I FERRANTI T IIsemiconductorsL BAW56 High Speed S w itc h in g D iode Pair C om m on A node DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in th in and th ick fiiim
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BAW56
OT-23
BAW56
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
MARKING YA SOT-23
w56 transistor
MARKING YA J3 SOT-23
ZC831
sot-23 marking YA
Diode Marking z3 SOT-23
DIODE W7
BZX84C12
BAR99
BAS16
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BAV99 Zener diode
Abstract: Diode Marking z3 SOT-23 marking code J1 sot23 transistors bav99 BAV99a7 Marking c9 SOT23 marking w7 sot-23 BAL99 BAV70 BAV74
Text: FERRANTI semiconductors BAV99 Hi gh Speed S w i t c h i n g Series D io de Pair DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film
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BAV99
OT-23
BAV99
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
BAV99 Zener diode
Diode Marking z3 SOT-23
marking code J1 sot23
transistors bav99
BAV99a7
Marking c9 SOT23
marking w7 sot-23
BAL99
BAV70
BAV74
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C6V2 ST
Abstract: FMMD6050 diode marking w9 06 Diode Marking z3 SOT-23 BAV74-JA BAL99 BAR99 BAV70 BAV74 BZX84-C43
Text: FERRANTI semiconductors BAV74 High Speed S w itc h in g Diode Pair Comrhon Cathode DESCRIPTION These devices are intended fo r high speed sw itching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film
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BAV74
OT-23
BAV74
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
C6V2 ST
FMMD6050
diode marking w9 06
Diode Marking z3 SOT-23
BAV74-JA
BAL99
BAR99
BAV70
BZX84-C43
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5D marking DIODE BAS16
Abstract: Zener Diode LF marking BAS 20 SOT23 DIODE MARKING CODE TW marking C20 sot-23 Y1 SOT-23 Ferranti Semiconductors diode marking w8 7y sot23 Diode Marking z3 SOT-23
Text: FERRANTI i semiconductors BAS16 High Speed Sw itching Diode DESCRIPTION This device is intended for high speed switching applications. Encapsulated in the popular SOT-23 package this device is designed specifically for use in thin and thick film hybrid
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BAS16
OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
5D marking DIODE BAS16
Zener Diode LF marking
BAS 20 SOT23
DIODE MARKING CODE TW
marking C20 sot-23
Y1 SOT-23
Ferranti Semiconductors
diode marking w8
7y sot23
Diode Marking z3 SOT-23
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FMMD914
Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film
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OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
FMMD914
FMMD6050
Z6 DIODE
FMMD
marking Z1 sot
ZC830B
BAL99
BAR99
sot-23 MARKING CODE A4
BAV70
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Diode Marking z3 SOT-23
Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Text: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci
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ZC830A
OT-23
C9/C20
50MHz
ZC831A
ZC832A
ZC833A
Diode Marking z3 SOT-23
dual diode marking A3
code J4 diode
W6 13A Diode
marking J6 transistors
diode marking x6
sot-23 MARKING CODE j3
marking W6 diode
BAV-99
j4 DIODE schottky sot 23
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Diode Marking z3 SOT-23
Abstract: BAR99 FMMD6050 diode marking x6 Z6 DIODE BAL99 BAS16 BAV70 BAV74 BAV99
Text: * FERRANTI semiconductors BAR99 High Speed Sw itching Diode DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and th ick film
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BAR99
OT-23
BAR99
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
Diode Marking z3 SOT-23
FMMD6050
diode marking x6
Z6 DIODE
BAL99
BAS16
BAV70
BAV74
BAV99
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