Untitled
Abstract: No abstract text available
Text: FFPF04U40DP FFPF04U40DP Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Cathode 2.Anode 3. Cathode ULTRA FAST RECOVERY POWER RECTIFIER
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FFPF04U40DP
O-220F
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Untitled
Abstract: No abstract text available
Text: FFP04U40DN FFP04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER
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FFP04U40DN
O-220
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Untitled
Abstract: No abstract text available
Text: FFPF04U40DN FFPF04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER
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FFPF04U40DN
O-220F
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FDPF5n50u
Abstract: diode 4A 400v ultra fast
Text: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2.0 Features Description • RDS on = 1.65 (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF5N50UT
FDPF5N50UT
50nsec
200nsec
FDPF5n50u
diode 4A 400v ultra fast
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diode 400V 4A
Abstract: diode 4A 400v ultra fast ICE 280 IRF1010 TRANSISTOR BIPOLAR 400V 20A
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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7072A
IRGB4059DPbF
O-220AB
diode 400V 4A
diode 4A 400v ultra fast
ICE 280
IRF1010
TRANSISTOR BIPOLAR 400V 20A
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Untitled
Abstract: No abstract text available
Text: PD - 97072 IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4059DPbF
IRF1010
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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7072A
IRGB4059DPbF
O-220AB
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diode 400V 4A
Abstract: IRF1010 diode 4A 400v ultra fast
Text: PD - 97072A IRGB4059DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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7072A
IRGB4059DPbF
IRF1010
O-220AB
diode 400V 4A
IRF1010
diode 4A 400v ultra fast
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APT8M80K
Abstract: MIC4452
Text: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M80K
O-220
APT8M80K
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M80K
O-220
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APT8M80K
Abstract: MIC4452
Text: APT8M80K 800V, 8A, 1.50Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT8M80K
O-220
APT8M80K
MIC4452
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fdpf10n50
Abstract: diode 4A 400v ultra fast FDPF10N50U Ultra Low voltage rds mosfet FDPF10N50UT
Text: FDPF10N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 8 A, 1.05 Features Description • RDS on = 850 m ( Typ.) @ VGS = 10 V, ID = 4 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF10N50UT
FDPF10N50UT
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200nsec
fdpf10n50
diode 4A 400v ultra fast
FDPF10N50U
Ultra Low voltage rds mosfet
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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07N65
Abstract: fusible 1a SMD LN4148 10471 VARISTOR
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT51X Rev 1.5 Oct 2012 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 4,6,8,10,12,14,16,18,20,22,24 2012-Oct– 19
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ACT51X
2012-Octâ
ACT512
PC817C
-26For
07N65
fusible 1a SMD
LN4148
10471 VARISTOR
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FDPF5n50u
Abstract: diode 4A 400v ultra fast N-channel 500V mosfet
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP5N50U
FDPF5N50UT
January2012
FDPF5N50UT
FDPF5n50u
diode 4A 400v ultra fast
N-channel 500V mosfet
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FDPF5N50UT
Abstract: FDPF5n50u FDP5N50U
Text: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP5N50U
FDPF5N50UT
May2012
FDPF5N50UT
FDPF5n50u
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Untitled
Abstract: No abstract text available
Text: FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features RDS on = 1.0 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A • • • • • • • Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 5 pF) 100% Avalanche Tested Improved dv/dt Capability
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STTH806TTI
Abstract: No abstract text available
Text: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 • ■ ■ ■ ■ 3 Insulated TO-220AB FEATURES AND BENEFITS ■ 2 ESPECIALLY SUITED AS BOOST DIODE IN
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STTH806TTI
O-220AB
STTH806TTI
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STTH806TTI
Abstract: No abstract text available
Text: STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF AV 8A VRRM 600 V (in series) Tj (max) 150 °C VF (max) 2.6 V IRM (typ.) 4A 1 2 3 1 2 3 Insulated TO-220AB FEATURES AND BENEFITS DESCRIPTION The TURBOSWITCH "H" is an ultra high
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STTH806TTI
O-220AB
STTH806TTI
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Untitled
Abstract: No abstract text available
Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state
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FDP8N50NZU
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50nsec
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FDPF8N50
Abstract: FDPF8N50NZU FDP8N50NZU
Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state
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FDP8N50NZU
FDPF8N50NZU
FDPF8N50NZU
FDPF8N50
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morocco L3
Abstract: STTH806TTI
Text: 2001-08-17 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-289-62 STTH806TTI tandem diod STTH806TTI TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS
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STTH806TTI
STTH806TTI
O-220AB
morocco L3
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Untitled
Abstract: No abstract text available
Text: APT7F80K 800V, 7A, 1.50Ω MAX,TRR ≤ 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F80K
160nS
O-220
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7A, 100v fast recovery diode
Abstract: No abstract text available
Text: APT7F80K 800V, 7A, 1.50Ω MAX,TRR ≤ 160nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT7F80K
160nS
APT7F80K
O-220
7A, 100v fast recovery diode
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