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    DIODE 513 Search Results

    DIODE 513 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 513 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    semikron skiip 400 gb

    Abstract: skiip gb 120 semikron IGBT skiip 513GD122-3DUL semikron skiip 3 semikron skiip 31 PX16 semikron skiip 3 gb 120 3000kV 513GD1223DU
    Text: SKiiP 513GD122-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    PDF 513GD122-3DUL semikron skiip 400 gb skiip gb 120 semikron IGBT skiip 513GD122-3DUL semikron skiip 3 semikron skiip 31 PX16 semikron skiip 3 gb 120 3000kV 513GD1223DU

    semikron skiip 400 gb

    Abstract: 513GD172-3DUL semikron skiip sensor s33 SKIIP APPLICATION skiip gb 120 PX16
    Text: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    PDF 513GD172-3DUL semikron skiip 400 gb 513GD172-3DUL semikron skiip sensor s33 SKIIP APPLICATION skiip gb 120 PX16

    513GD173-3DUL

    Abstract: semikron skiip 400 gb semikron skiip 3 skiip gb 120 MKP 357 PX16 SKIIP 125 513GD173
    Text: SKiiP 513GD173-3DUL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms


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    PDF 513GD173-3DUL 513GD173-3DUL semikron skiip 400 gb semikron skiip 3 skiip gb 120 MKP 357 PX16 SKIIP 125 513GD173

    BAP51-02

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    PDF M3D319 BAP51-02 OD523 MAM405 OD523) 125004/00/02/pp6 BAP51-02 BP317

    109 DIODE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.


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    PDF M3D319 BAP50-02 OD523 MAM405 OD523) 613512/01/pp8 109 DIODE

    Untitled

    Abstract: No abstract text available
    Text: SKiiP 513GD172-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    PDF 513GD172-3DUL 513GD172-3DUL

    SKIIP 125

    Abstract: JR10 semikron skiip 20 skiip gb 120 iec 60721-3-3
    Text: SKiiP 513GD122-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms


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    PDF 513GD122-3DUL 513GD122-3DUL SKIIP 125 JR10 semikron skiip 20 skiip gb 120 iec 60721-3-3

    DIODE A6 sod110

    Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
    Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation


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    PDF OD110 OD110 innovat27 SCB63 DIODE A6 sod110 sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323

    BA792

    Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:


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    PDF BA792 MAM139 OD110) OD110 SCDS47 117021/1100/01/pp8 BA792 top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark

    SMD MARKING 541 DIODE

    Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
    Text: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF


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    PDF M3D178 BA792 MAM139 OD110) OD110 SCDS47 113061/1100/01/pp8 SMD MARKING 541 DIODE smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    PDF M3D319 BAP63-02 BAP63-02 OD523 OD523) MAM405 125004/04/pp7

    Untitled

    Abstract: No abstract text available
    Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode


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    PDF QFN28 QFN28-5x5 D-55294

    marking code k1

    Abstract: BAP51-02 smd marking KM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance


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    PDF M3D319 BAP51-02 OD523 MAM405 OD523) 613514/02/pp8 marking code k1 BAP51-02 smd marking KM

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance


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    PDF M3D319 BAP63-02 BAP63-02 OD523 OD523) MAM405 125004/04/pp7

    BAP51-03

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance


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    PDF M3D049 BAP51-03 OD323 MAM406 OD323) 115002/03/pp8 BAP51-03

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD


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    PDF M3D319 1PS79SB10 SC-79 MAM403 SC-79) SCA60 115104/00/01/pp8

    em 518 diode

    Abstract: em 513 diode diode em 513 diode 1600 rectifier
    Text: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A


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    smd schottky diode marking 72

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic


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    PDF M3D049 1PS76SB70 OD323 MAM283 OD323) SCA60 115104/00/01/pp8 smd schottky diode marking 72

    Marking Code 72

    Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
    Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection


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    PDF M3D102 1PS70SB20 OT323 SC-70) MAM394 613514/01/pp8 Marking Code 72 smd schottky diode marking 72 B 817 marking code 203 sot323 package

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


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    PDF 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC

    5135a

    Abstract: No abstract text available
    Text: Ordering number: EN 5135A SVC371 No.5135A f l _ Diffused Junction Type Silicon Diode i Composite Varactor Diode for AM Receiver LowVoltage Electronic Tuning Applications Features • Excellent large-input characteristics because of dual-varactor composite type.


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    PDF SVC371 SVC371 5135a

    SMD diode sg 46

    Abstract: SMD diode sg 03
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS


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    PDF BAP50-03 SCA61 SMD diode sg 46 SMD diode sg 03

    diode a62

    Abstract: BAP51-03 diode smd ED 74 lm 9805
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance


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    PDF BAP51 BAP51-03 diode a62 BAP51-03 diode smd ED 74 lm 9805

    BAL99

    Abstract: Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE
    Text: • Philips Sem iconductors . ^ bbSBTBl aaaMESM 513 H A P X _ _ — N AflER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching


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    PDF bbS3T31 BAL99 S3131 00242Sfl BAW62 BAL99 Philips MBB BAW62 sot23 BAW62 PH philips diode PH 15 ir 222 BAW62 D0242 LF MARKING CODE