MLP832
Abstract: ZXSDS2M832 ZXSDS2M832TA ZXSDS2M832TC
Text: ZXSDS2M832 MPPS Miniature Package Power Solutions DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION SUMMARY Schottky Diode - VR = 60V; VF = 600mV @1A ; IC=1.65A DESCRIPTION Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent
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ZXSDS2M832
600mV(
MLP832
MLP832
ZXSDS2M832
ZXSDS2M832TA
ZXSDS2M832TC
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MLP832
Abstract: ZXSDS2M832 ZXSDS2M832TA ZXSDS2M832TC
Text: OBSOLETE ZXSDS2M832 MPPS Miniature Package Power Solutions DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION SUMMARY Schottky Diode - VR = 60V; VF = 600mV @1A ; IC=1.65A DESCRIPTION Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent
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ZXSDS2M832
600mV(
MLP832
MLP832
ZXSDS2M832
ZXSDS2M832TA
ZXSDS2M832TC
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diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
diode
SC-46
schottky diode 60V 5A
CB803-03
ERA81-004
ERA82-004
ERA83-004
ERA83-006
ERA84-009
ERB81-004
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ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
ultra low forward voltage schottky diode
diode
Schottky diode low voltage high current
SC-46
ERA81-004
ERA82-004
ERA83-004
ERA83-006
ERA84-009
ERB81-004
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c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
c81 004
Diode C81 004
Schottky diode low voltage high current
C81 diode
diode color code
diode
"Power Diode" 20A
schottky diode 60V 5A
SC-46
ERA81-004
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schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
schottky diode 60V 5A
30A high speed diode
Schottky Diode 20V 5A
Schottky diode high reverse voltage
marking code 1A diode
Schottky Diode 40V 2A
Schottky Barrier 3A
diode schottky code 10
SCHOTTKY BARRIER DIODE
ERG81-004
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diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
diode b81
b81 004
Diode erb81-004
b81 diode
diode color code
ERB81-004
SC-46
ERA81-004
ERA83-006
ERA84-009
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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pnp darlington array
Abstract: NPN darlington array DN8690
Text: Others DN8690 4-circuit Darlington Driver Array High Breakdown Voltage : 60V, Large Drive Current : 1.5A 14 4 13 5 12 • Features 6 11 • 4 circuits • High breakdown voltage : VCE(SUS) = 60V (min) • Large output current : IO = 1.5A (max) • Built-in output clamp diode : VR = 60V(min)
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DN8690
DN8690
16-pin
pnp darlington array
NPN darlington array
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185B
ECH8690
A2185-8/8
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LTP120N06
Abstract: No abstract text available
Text: LTP120N06 N-Channel 60V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant
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to150
LTP120N06
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185A ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185A
ECH8690
PW10s,
1200mm2
-30here
A2185-8/8
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185 ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185
ECH8690
A2185-9/9
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2185A ECH8690 Power MOSFET 60V, 4.7A, 55m -60V, -3.5A, 94m Complememtary Dual ECH8 ht t p://onse m i.c om Features • On-State Resistance Nch:RDS on 1=42m (typ.) Pch:RDS(on)1=73m (typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in
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ENA2185A
ECH8690
A2185-8/8
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zener diode
Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Text: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the
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DTDG14GP
500mA
96-376-DG14GP)
zener diode
Zener Diode 5A
high hfe transistor
transistor Ic 1A datasheet NPN
digital transistor
diode Zener
DTDG14GP
zener- diode
"Zener Diode"
TA DIODE ZENER
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marking DIODE 2U 04
Abstract: DTDG23YP T100 marking 2U diode II1001 Diode marking CODE 5M
Text: DTDG23YP Transistors Digital transistor built-in resistors and zener diode , driver (60V, 1A) DTDG23YP zFeatures 1) High DC current gain. (Min. 300 at VO/IO=2V/0.5A) 2) Low output voltage. (Typ. 0.4V at IO/II=500/50mA) 3) Built-in zener diode gives strong protection against reverse.
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DTDG23YP
500/50mA)
marking DIODE 2U 04
DTDG23YP
T100
marking 2U diode
II1001
Diode marking CODE 5M
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN8966A SBE812 Schottky Barrier Diode http://onsemi.com 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Applications • High frequency rectification switching regulators, converters, choppers Features • • • Small switching noise
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EN8966A
SBE812
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NTE2336
Abstract: No abstract text available
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built–In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
NTE2336
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zener 4A
Abstract: Zener 224 NTE2336
Text: NTE2336 Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode Features: D 60V Zener Diode Built−In Between Collector and Base D Low Fluctuation in Breakdown Voltages D High Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: TC = +25°C unless otherwise specified
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NTE2336
500mA,
100mH,
zener 4A
Zener 224
NTE2336
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diode 60v 1a
Abstract: marking code 1A diode
Text: ERA83-006 1A (60V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE ø2.5 ø0.56 3.0 25 MIN. 25 MIN. Features Marking Low VF Super high speed switching Color code : White Voltage class 6 High reliability by planer design Ultra small package, possible for 5mm pitch automatic
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ERA83-006
diode 60v 1a
marking code 1A diode
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tl117
Abstract: No abstract text available
Text: ショットキーバリアダイオード Schottky Barrier Diode 1A 60V Tjw150℃ 外 ED10QA06 形 図 ショットキーバリアダイオード 構造 Construction Schottky barrier Diode 高周波整流用 用途 Application • 最大定格 ＳＭＤ Type
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Tjw150
ED10QA06
ED10QA06
20mVRMS
100kHz
tl117
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DTDG14GP
Abstract: T100 sc-62 zener
Text: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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DTDG14GP
500mA
SC-62
DTDG14GP
T100
sc-62 zener
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sg32
Abstract: SG3212F SG3212J CERAMIC FLATPACK jantx diodes
Text: SG3212 5ILIŒ1N GENERAL DUAL DIODE BRIDGE LIN EA R IN TEG R A TED C IR C U IT S DESCRIPTION FEATURES The Silicon General dual diode bridge features high breakdown and low forward vo lta g e . • 60V minimum breakdown voltage » 1A current capability per diode
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SG32U
MIL-S-19500
SG3212
14-PIN
SG3212J/883B
SG3212J
SG3212F/883B
SG3212F
sg32
SG3212F
SG3212J
CERAMIC FLATPACK
jantx diodes
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Untitled
Abstract: No abstract text available
Text: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code
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0D0316T
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