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    DIODE 85C Search Results

    DIODE 85C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 85C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cree Sic

    Abstract: schottky diode FIT 155C CSD04060 CSD06060 CSD10060
    Text: SiC Power Diode Reliability SiC Schottky Diode Reliability October 2008 September 2007 SiC Power Diode Reliability October 2008 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers four years ago


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    PDF CPWR-RS03, cree Sic schottky diode FIT 155C CSD04060 CSD06060 CSD10060

    CSD06060A

    Abstract: cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio
    Text: SiC Power Diode Reliability SiC Schottky Diode Reliability September 2006 March 2006 SiC Power Diode Reliability September 2006 Dr. Allan Ward, Manager, Advanced Device Reliability ABSTRACT Cree introduced its ZERO RECOVERY line of SiC power rectifiers three years ago


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    PDF CPWR-RS03, CSD06060A cree Sic reliability cree 155C CSD10060A schottky diode FIT powerdio

    Untitled

    Abstract: No abstract text available
    Text: Series M50 Diode 60-100Amp • DIODE Modules • High Surge Current Rectifier Circuits • Up to 1600 Volt Blocking Standard Single- and three-phase diode circuits incorporate highly efficient thermal management to provide high surge capability, extended life, and reliable


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    PDF 60-100Amp E72445) M50100TB1200 258-5057Tech

    AK2573A

    Abstract: AK2573AVB C101 620CH
    Text: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)


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    PDF AK2573A] AK2573A MS0189-E-01> AK2573A AK2573AVB C101 620CH

    R222 smd

    Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
    Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP


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    PDF CA-001175 BA41-00418A BA62-00194A BA62-00306A BA68-40005L 120OHM 143OHM/132MHZ 213OHM/390MHZ, R222 smd RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548

    NX7300BA-CC

    Abstract: STM-16
    Text: 1310 nm InGaAsP NX7300BA-CC MQW-FP LASER DIODE NX7300CA-CC COAXIAL MODULE FOR 2.5 Gb/s FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm The NX7300BA-CC and NX7300CA-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.


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    PDF NX7300BA-CC NX7300CA-CC NX7300BA-CC NX7300CA-CC STM-16

    NX7300BA-CC

    Abstract: NX7300CH-CC STM-16
    Text: 1310 nm InGaAsP NX7300BA-CC MQW-FP LASER DIODE NX7300CH-CC COAXIAL MODULE FOR 2.5 Gb/s FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm The NX7300BA-CC and NX7300CH-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.


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    PDF NX7300BA-CC NX7300CH-CC NX7300BA-CC NX7300CH-CC STM-16 24-Hour

    samsung r540

    Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
    Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP


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    PDF ZD500 QF500 RHU002N06 200MA OT-323 F820P 33x33mm 500MHz K4J52324QC 512Mbit samsung r540 Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535

    laser diode pinout

    Abstract: laser diode to56 to56 dfb laser diode 1550nm FWHM LED 1310 nm fiber coupled TO56 package laser diode FP 1550nm laser diode for 10Gbps TOcan FP TO-56
    Text: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with


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    PDF FP-1310-4I-56A FP-1310-4I-56A 1-866-MY-VCSEL laser diode pinout laser diode to56 to56 dfb laser diode 1550nm FWHM LED 1310 nm fiber coupled TO56 package laser diode FP 1550nm laser diode for 10Gbps TOcan FP TO-56

    1550nm laser diode 4 mW 5 Ghz

    Abstract: 1310nm laser diode for 10Gbps 10Gbps TOcan 1550nm laser diode 10 Ghz
    Text: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with


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    PDF FP-1310-4I-56A FP-1310-4I-56A 1-866-MY-VCSEL 1550nm laser diode 4 mW 5 Ghz 1310nm laser diode for 10Gbps 10Gbps TOcan 1550nm laser diode 10 Ghz

    km 3703

    Abstract: Laser-Diode 1550 nm 0 dBm NX8504BE-CC NX8504CE-CC
    Text: NEC's 1550 nm InGaAsP MQW DFB NX8504BE-CC LASER DIODE IN COAXIAL PACKAGE NX8504CE-CC for 622 Mb/s APPLICATION FEATURES DESCRIPTION • PEAK EMISSION WAVELENGTH: λP = 1550 nm NEC's NX8504BE-CC and NX8504CE-CC are 1550 nm Distributed Feed-Back DFB laser diode coaxial modules with


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    PDF NX8504BE-CC NX8504CE-CC NX8504BE-CC NX8504CE-CC km 3703 Laser-Diode 1550 nm 0 dBm

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1310 NM FABRY-PEROT FP LASER DIODE TO56 PACKAGE FP-1310-4I-56A FEATURES: Wide operating temperature (-40°C to 100°C) Stable threshold current for easy transmitter control (T0 ~ 80K) The FP-1310-4I-56A is an MOCVD grown InAlGaAs ridge laser diode with


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    PDF FP-1310-4I-56A FP-1310-4I-56A 1-866-MY-VCSEL

    IXLD02SI

    Abstract: IXLD02 lem la 55 p Directed Energy LEM LTA
    Text: IXLD02SI Differential 2A Ultra Fast Laser Diode Driver Features General Description • • • • • • • The IXLD02 is an ultra high-speed differential laser diode driver. The IXLD02 is designed specifically to drive single junction laser diodes in a differential fashion. A Q output and


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    PDF IXLD02SI IXLD02 17MHz 600ps IXLD02SI lem la 55 p Directed Energy LEM LTA

    NX7301BA-CC

    Abstract: NX7301CA-CC
    Text: NEC's 1310 nm InGaAsP MQW FP NX7301BA-CC LASER DIODE IN COAXIAL PACKAGE NX7301CA-CC FOR 155 Mb/s AND 622 Mb/s APPLICATIONS FEATURES DESCRIPTION • CENTER WAVELENGTH: λC = 1310 nm NEC's NX7301BA-CC and NX7301CA-CC are 1310 nm FabryPerot FP laser diode coaxial modules with single mode fiber.


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    PDF NX7301BA-CC NX7301CA-CC NX7301BA-CC NX7301CA-CC

    PD-LD

    Abstract: No abstract text available
    Text: PD LD CWDM 1.3~1.6um Band Laser Diode Modules Inc. CWDM 1.3~1.6um Band Laser Diode Modules PD-LD Inc. offers a complete selection of CWDM DFB Lasers for the O+E+S+C+L+B regions. These units are available in ready-to-use, fiber-coupled packages, including FC, ST, and SC receptacles, as well


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    PDF E2000 CWDM13 PD-LD

    Untitled

    Abstract: No abstract text available
    Text: tSENSITRON 85CNQ015 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 832, REV.- ULTRA LOW REVERSE LEAKAGE PLASTIC POWER SCHOTTKY RECTIFIER 15 V, 80 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:


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    PDF 85CNQ015

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR 85CNQ015 TECHNICAL DATA DATA SHEET 832, REV.- ULTRA LOW REVERSE LEAKAGE PLASTIC POWER SCHOTTKY RECTIFIER 15 V, 80 A Applications: œ Switching Power Supply œ Converters œ Free-Wheeling Diodes œ Polarity Protection Diode Features:


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    PDF 85CNQ015

    phototransistor 600 nm

    Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
    Text: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION


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    PDF SDP8407 SEP8507 INFRA-16 SDP8407 phototransistor 600 nm simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet

    Untitled

    Abstract: No abstract text available
    Text: HYBRID I.C.S "Hi-Net" n ic R ic o n Diode Arrays High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general


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    PDF ZHLA0651 ZHMA0425 MA425 ZHMA042S MA426 ZHLA0652 ZHLA0653 ZHMA0427 MA427 ZHLA0654

    GT32T

    Abstract: No abstract text available
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Mode! type selected. T he basic current con­


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    Triangle Microwave rr

    Abstract: Triangle Microwave Digital Attenuator Triangle Microwave GA KDI attenuator MCE OR KDI pin diode attenuator KDI triangle 2-gt attenuator
    Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the M odel type selected. The basic current con­


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    PQ-49

    Abstract: No abstract text available
    Text: ANALOG DIODE PHASE SHIFTERS SERIES PQ CONTINUOUSLY VARIABLE — 0.1-18 GHz GENERAL INFORMATION An analog phase shifter continuously changes the phase of a microwave signal by varying a D.C. voltage. Since the D.C. voltage applied to the diode is a reverse bias, the current drain is negligible


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    Untitled

    Abstract: No abstract text available
    Text: IFSM IF av Vrrm Amps Volts MAX MIN Vfm IRM TJ Volts mA C MAX MAX MAX (60Hz) @ TC SPECIFICATION Amps °C DIODE: Schottky Max. FST 80 Amp. (D61-3SM) Part # Cross Ref. : FST8315SM 85CNQ015SM 80 15 78 0.36 20 100 800 FST8320SM 87CNQ020SM 80 20 135 0.44 1.5 150


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    PDF D61-3SM) FST8315SM 85CNQ015SM FST8320SM 87CNQ020SM FST8330SM 82CNQ030SM FST8345SM 80CNQ045SM FST83100SM

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492