hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A
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RJS6005TDPN-EJ
R07DS0899EJ0101
PRSS0003AN-A
O-220AB-2L)
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0200
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0100
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6005WDPK
R07DS0901EJ0200
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6005WDPK
R07DS0901EJ0201
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material : Silicon Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A
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Original
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RJS6005TDPN-EJ
R07DS0899EJ0100
PRSS0003AN-A
O-220AB-2L)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6005WDPK
R07DS0901EJ0100
PRSS0004ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0300
PRSS0004ZE-A
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PDF
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6004TDPP-EJ
R07DS0896EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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PDF
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6004TDPP-EJ
R07DS0896EJ0300
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0100 Rev.1.00 Nov 06, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A
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RJS6004TDPN-EJ
R07DS0895EJ0100
PRSS0003AN-A
O-220AB-2L)
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PDF
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6004TDPP-EJ
R07DS0896EJ0102
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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PDF
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PRSS0003ZE-A
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A
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RJS6004WDPQ-E0
R07DS0898EJ0101
PRSS0003ZE-A
O-247)
PRSS0003ZE-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0101 Rev.1.01 Nov 01, 2012 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0101
PRSS0002ZA-A
O-220FP-2L)
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PDF
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RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0200
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A
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Original
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RJS6004TDPN-EJ
R07DS0895EJ0101
PRSS0003AN-A
O-220AB-2L)
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PDF
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RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0300
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
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PDF
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0101 Rev.1.01 Nov 01, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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Original
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RJS6004TDPP-EJ
R07DS0896EJ0101
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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PDF
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silicon carbide diode
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPQ-E0 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0898EJ0100 Rev.1.00 Nov 01, 2012 Features • New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003ZE-A
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RJS6004WDPQ-E0
R07DS0898EJ0100
PRSS0003ZE-A
O-247)
silicon carbide diode
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lm358 laser current driver
Abstract: No abstract text available
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: [email protected] Laser Diode Incorporated 1310nm Laser Diode Power to 2mW Singlemode 9/125/900 fiber
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1310nm
14-pin
1310nm
lm358 laser current driver
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Laser diode lm358
Abstract: lm358 laser current driver laser 1310nm LM358 laser driver TIP-120 Lucent Laser 2000 LASER DISTANCE METER
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: [email protected] Laser Diode Incorporated 1310nm Laser Diode Power to 2mW Singlemode 9/125/900 fiber
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1310nm
14-pin
14-pin
1310nm
Laser diode lm358
lm358 laser current driver
laser 1310nm
LM358 laser driver
TIP-120
Lucent Laser 2000
LASER DISTANCE METER
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ldi SCW 1550
Abstract: lucent laser 1550nm scw 1550 lm358 laser current driver 1550 laser diode TEC TO CAN lucent laser module 1550nm Lucent PIN photodiode 1550nm laser driver LM358
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: [email protected] Laser Diode Incorporated 1550nm Laser Diode Power to 1mW Singlemode 9/125 /900 fiber
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1550nm
14-pin
1550nm
ldi SCW 1550
lucent laser 1550nm
scw 1550
lm358 laser current driver
1550 laser diode TEC TO CAN
lucent laser module 1550nm
Lucent PIN photodiode 1550nm
laser driver LM358
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GR-468-CORE
Abstract: SMF28
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: [email protected] Laser Diode Incorporated InGaAs PIN Photo Diode Modules for DWDM/EDFA Tap Monitor Applications
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alo3080-PM1
28-CPC6
3080-PM2
900um
3080-PM3
3080-PM4
GR-468-CORE
SMF28
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