DIODE 4005
Abstract: DIODE aay 49 100b choke M175 SD1660 AAY49 GE DIODE
Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1660
SD1660
DIODE 4005
DIODE aay 49
100b choke
M175
AAY49
GE DIODE
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push pull class AB RF linear
Abstract: R767 SD1492 BOX63B 400S M175 GE DIODE
Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING POUT = 150 W MIN. WITH 6.5 dB GAIN
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SD1492
SD1492
push pull class AB RF linear
R767
BOX63B
400S
M175
GE DIODE
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SD1680
Abstract: M175 push pull class AB RF linear DIODE aay 49 j 4005
Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1680
SD1680
M175
push pull class AB RF linear
DIODE aay 49
j 4005
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SD1492
Abstract: R767 16 AWG 400S M175 GE DIODE push pull class AB RF linear l21 diode
Text: SD1492 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 150 W MIN. WITH 6.5 dB GAIN
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SD1492
SD1492
R767
16 AWG
400S
M175
GE DIODE
push pull class AB RF linear
l21 diode
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DIODE aay 49
Abstract: 100MF 63V GE DIODE diode l19 AAY49 M175 SD1660 si diode
Text: SD1660 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1660
SD1660
DIODE aay 49
100MF 63V
GE DIODE
diode l19
AAY49
M175
si diode
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SD1680
Abstract: DIODE aay 49 Electronic ballast 100W push pull class AB RF linear SD168 M175 GE DIODE
Text: SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION FOR HIGH RELIABILITY DIFFUSED EMITTER BALLAST
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SD1680
SD1680
DIODE aay 49
Electronic ballast 100W
push pull class AB RF linear
SD168
M175
GE DIODE
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SM4T35CAY
Abstract: ISO7637 SM4TY sm4t33 SM4T33CAY AN2689 cny 76 SM4T26AY SM4T28 SM4T39CA
Text: SM4TY Automotive 400 W Transil Features • peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 µs) ■ stand-off voltage range: from 5 V to 58 V ■ unidirectional and bidirectional types ■ low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C
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AEC-Q101
DO-214AC)
SM4T35CAY
ISO7637
SM4TY
sm4t33
SM4T33CAY
AN2689
cny 76
SM4T26AY
SM4T28
SM4T39CA
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MARKING AAY
Abstract: marking ACY SM4T15CA SM4T39CA
Text: SM4TY Automotive 400 W Transil Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 µs) ■ Stand-off voltage range: from 5 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C
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AEC-Q101
DO-214AC)
MARKING AAY
marking ACY
SM4T15CA
SM4T39CA
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SM4T6V7AY
Abstract: MARKING AAY SM4T12C
Text: SM4TY Automotive 400 W Transil Datasheet − production data Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 µs) ■ Stand-off voltage range: from 5 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C
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AEC-Q101
DO-214AC)
SM4T6V7AY
MARKING AAY
SM4T12C
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Untitled
Abstract: No abstract text available
Text: SM4TY Automotive 400 W Transil Datasheet − production data Features • Peak pulse power: – 400 W 10/1000 µs – 2.3 kW (8/20 µs) ■ Stand-off voltage range: from 5 V to 70 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C
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AEC-Q101
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K 4005 transistor
Abstract: No abstract text available
Text: f Z 7 ^ 7 # . S G M S - 1 H 0 M » Ê t H ê r a M S 0 N SD1660 O g ! RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS . . . . . . . . . > 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY
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SD1660
SD1660
K 4005 transistor
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LH0066
Abstract: LH0086 LH0086CD LH0086C LH0086D Ta-12S
Text: LH0086/LH0086C National Semiconductor LH0086/LH0086C Digitally-Programmable-Gain Amplifier General Description Features The LH0086 is a self-contained, high-accuracy, digitally-programmable-gain amplifier. It consists of a FET-input opera tional amplifier, a precision resistor ladder, and a digitallyprogrammable switch network. A three-bit TTL-compatible
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LH0086/LH0086C
LH0086
LH0086C
LH0066
LH0086CD
LH0086D
Ta-12S
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5q 1265 rf
Abstract: DIODE aay 49
Text: SGS-THOMSON 5 7 . SD1492 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • ■ i ■ ■ . ■ . ■ 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION
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SD1492
SD1492
5q 1265 rf
DIODE aay 49
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Untitled
Abstract: No abstract text available
Text: S G S - T H Ç O M S O N IlO T M D Ê i ï. SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS > . . . . . . . . . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY
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SD1680
SD1680
1994SGS-THOMSON
0D70b77
|
|
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Untitled
Abstract: No abstract text available
Text: f Z 7 S G S -T H O M S O N ^ 7 # . K M SD1680 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 915 - 960 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR
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SD1680
SD1680
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K 4005 transistor
Abstract: ISD1660 ATC100B 47JJ
Text: f Z 7 SGS-THOMSON ^ 7 # . K M SD1660 « « ® « ! RF & M I C R O W A V E T R A N S I S T O R S 8 0 0 /9 0 0 M H z A P P L I C A T I O N S • . ■ . ■ ■ . ■ ■ . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHING DESIGNED FOR HIGH POWER LINEAR
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SD1660
SD1660
K 4005 transistor
ISD1660
ATC100B
47JJ
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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j 692
Abstract: 11N5968 A4954 1N6637 JANTX 1N4954 1N4954US 1N4996 1N4996US 1N5968 1N5968US
Text: MIL S P E C S MME » • □QQQ12S 0031^32 1 ■¡MILS I INCH-POUND I The documentation and process conversion | measures necessary to comply with this | revision shall be completed b y ^ g ^ g-j MIL-S-19500/356D 19 J u n e 1 9 9 2 SUPERSEDING MIL-S-19500/356C
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31ci32
MIL-S-19500/356D
MIL-S-19500/356C
1N4954
1N4996,
1N5968,
1N5969,
1N6632
1N6637,
1N4954US
j 692
11N5968
A4954
1N6637 JANTX
1N4996
1N4996US
1N5968
1N5968US
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POVER TRANSISTOR MOSFET
Abstract: SC3331 MC33372 TOP221 PN MOTOROLA MBR20100 604953B02500
Text: Order this document by MC33370/D M MOTOROLA MC33370 thru MC33374 —— — — High Voltage Power Switching Regulator The MC33370 series are monolithic high voltage power switching regulators that combine the required converter functions with a unique programmable
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MC33370/D
MC33370
POVER TRANSISTOR MOSFET
SC3331
MC33372
TOP221 PN
MOTOROLA MBR20100
604953B02500
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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LM1204
Abstract: No abstract text available
Text: December 1994 Semiconductor & LM1204 150 MHz RGB Video Amplifier System General Description Features The LM1204 is a triple 150 MHz video amplifier system designed specifically for high resolution RGB video display applications. In addition to three matched video amplifiers,
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LM1204
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DIODE S3V 40
Abstract: differential pair cascode differential pair cascode darlington lm1209 LM1208N LM1209N N28B blank schematic flow
Text: a t i o n a l S e m LM1208/LM 1209 N i c o n d u c t o r & LM1208/LM 1209 130 MHz/100 MHz RGB Video Amplifier System with Blanking General Description The L M 1 2 0 8 /L M 1 209 is a very high frequency video am plifi er system intended fo r use in high resolution RGB m onitor
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LM1208/LM1209
Hz/100
LM1208/LM
1208/LM1209
112C8N
I12C8N
TL/H/11884-21
b501il24
TL/H/11884â
DIODE S3V 40
differential pair cascode
differential pair cascode darlington
lm1209
LM1208N
LM1209N
N28B
blank schematic flow
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