Le57D11
Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Text: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the
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Le57D11
Legerity SLAC
L11A050AA
jr223
RTX22
AM79Q021
diode AR s1 55
CD11
CD12
CD22
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D20N06
Abstract: TRANSISTOR SDM M6 SDM M6
Text: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TYPE V DSS R DS on ID ST D20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STD20N06
D20N06
100oC
175oC
O-251)
O-252)
O-251
O-252
D20N06
TRANSISTOR SDM M6
SDM M6
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6810
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Untitled
Abstract: No abstract text available
Text: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain
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AON6812
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diode AR S1 99
Abstract: S3 DIODE schottky 486 smps
Text: Advanced Technical Information Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 HiPerFET MOSFET Diode Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V Transient
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100N10S1
100N10S2
100N10S3
diode AR S1 99
S3 DIODE schottky
486 smps
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Untitled
Abstract: No abstract text available
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
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AO6604
Abstract: No abstract text available
Text: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AO6604
AO6604
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AO4616
Abstract: 20V P-Channel Power MOSFET 500A
Text: AO4616 30V Complementary MOSFET General Description Product Summary The AO4616 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4616
AO4616
20V P-Channel Power MOSFET 500A
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Untitled
Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AON4605
AON4605
110m1
180m1
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AO4629L
Abstract: No abstract text available
Text: AO4629L Complementary Enhancement Mode Field Effect Transistor General Description Product Summary AO4629L uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
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AO4629L
AO4629L
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3X2A
Abstract: No abstract text available
Text: AON4605 30V Complementary MOSFET General Description Product Summary The AON4605 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
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AON4605
AON4605
3X2A
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PM45100K
Abstract: PM50100K 0312C
Text: PM45100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain
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PM45100K
31Max
PM45100K
PM50100K
0312C
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AOD609
Abstract: aod609 datasheet
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
aod609 datasheet
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Untitled
Abstract: No abstract text available
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
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Untitled
Abstract: No abstract text available
Text: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)
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AON7810
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AON7810
Abstract: No abstract text available
Text: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)
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AON7810
AON7810
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Untitled
Abstract: No abstract text available
Text: AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS 30V 16A
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AON6816
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Untitled
Abstract: No abstract text available
Text: AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application VDS ID (at VGS=10V)
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AON6816
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Untitled
Abstract: No abstract text available
Text: ZXM HC6A07T8 COM PLEM ENTARY 60V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V (BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench M OSFETs from Zetex utilizes a unique
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HC6A07T8
REE52)
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Untitled
Abstract: No abstract text available
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
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AOD603A
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
O252-4L
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SKM652
Abstract: SKM692F SKM682F
Text: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì
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ai3bLj71
fll3bb71
T-39-15
SKM651
SKM652F
SKM681F
SKM682F
SKM691F
SKM692F
SKM652
SKM692F
SKM682F
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