FMXA-1106S
Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
FMXA-1106S
XA1106
Diode XA1106
FMX-G26S
sanken lot number
B105
CF35
SANKEN power supply
SANKEN smps
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PDF
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XA1106
Abstract: Diode XA1106 FMXG26 FMX-G26S FMXA-1106S sanken lot number B105 Sanken marking SANKEN power supply
Text: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode
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Original
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
XA1106
Diode XA1106
FMXG26
FMX-G26S
FMXA-1106S
sanken lot number
B105
Sanken marking
SANKEN power supply
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PDF
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MPEN-230AF
Abstract: sanken sanken power transistor CF35
Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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MPEN-230AF
Package---TO-262
100Vguarantee
D01-006EA-051202
MPEN-230AF
sanken
sanken power transistor
CF35
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PDF
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diode B105
Abstract: Sanken catalogue MPEN-230AF
Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters
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Original
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MPEN-230AF
Package---TO-262
100Vguarantee
D01-006EA-051202
diode B105
Sanken catalogue
MPEN-230AF
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PDF
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d0109
Abstract: sanken power transistor FMEN-210A 210A
Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
d0109
sanken power transistor
210A
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-220A March, 2006 General Description Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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FMEN-220A
Package---TO220F
FMEN-220A
D01-010EA-060310
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PDF
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FME-220B
Abstract: sanken power transistor CF35 FME220 sanken
Text: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-220B
Package---TO220F
FME-220B
150Vguarantee
D01-013EA-070323
sanken power transistor
CF35
FME220
sanken
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PDF
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FMEN-210A
Abstract: FMEN210
Text: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters
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Original
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
FMEN210
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PDF
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FME-210B
Abstract: CF35 210B
Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-210B
Package---TO220F
FME-210B
150Vguarantee
D01-012EA-070322
CF35
210B
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PDF
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FMEN-220A
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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Original
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FMEN-220A
Package---TO220F
FMEN-220A
0E-01
D01-010EA-060310
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode FMEN-210A March, 2006 General Description Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications • DC-DC converters
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Original
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FMEN-210A
Package---TO220F
FMEN-210A
D01-090EA-060310
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PDF
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FME-210B
Abstract: sanken CF35 Sanken catalog
Text: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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Original
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FME-210B
Package---TO220F
FME-210B
150Vguarantee
D01-012EA-070322
sanken
CF35
Sanken catalog
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PDF
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sanken power transistor
Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Text: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters
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FMEN-220A
Package---TO220F
FMEN-220A
0E-01
D01-010EA-060310
sanken power transistor
CF35
sanken
DSA0016518
Sanken catalog
"Sanken Rectifiers"
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PDF
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FME-220B
Abstract: CF35 615t
Text: Schottky Barrier Diode FME-220B April. 2007 •General Description ■Package-TO220F FME-220B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters
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FME-220B
Package---TO220F
FME-220B
150Vguarantee
D01-013EA-070323
CF35
615t
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PDF
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Diode XA1106
Abstract: XA1106
Text: Ultrafast Recovery Diode FMXA-1106S General Description November, 2005 Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode FRD for a continuous-current-mode PFC circuit.
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FMXA-1106S
Package---TO220F-2Pin
D01-002EA-051128
Diode XA1106
XA1106
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PDF
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2SK3711
Abstract: SK3711 051124 sanken power transistor B105 CF35 MT100 sanken MOSFET DSA0016517 N CH MOSFET
Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit
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2SK3711
T02-002EA-051124
2SK3711
SK3711
051124
sanken power transistor
B105
CF35
MT100
sanken MOSFET
DSA0016517
N CH MOSFET
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PDF
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051124
Abstract: 2SK3711 B105 MT100 SK3711 sanken
Text: 60V N -ch MOSFET 2SK3711 December 2005 •Package—TO3P ■Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed ■Applications • Electric power steering • High current switching ■Equivalent circuit
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2SK3711
T02-002EA-051124
051124
2SK3711
B105
MT100
SK3711
sanken
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PDF
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SANKEN power supply
Abstract: XB2102 sanken lot number B105 FMXB-2102
Text: Fast Recovery Diode with built-in SBD for temperature detection FMXB-2102 December, 2005 •General Description ■Package-TO220F-2Pin An SBD for overheating detection is incorporated together with a secondary side rectification FRD into a TO220F package.
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FMXB-2102
Package---TO220F-2Pin
O220F
D01-005EA-051215
SANKEN power supply
XB2102
sanken lot number
B105
FMXB-2102
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PDF
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XB2102
Abstract: D01-005EA-051215 fire alarm using thermistor sanken lot number SANKEN power supply Sanken marking B105 CF35 FMXB-2102 ray 40
Text: Fast Recovery Diode with built-in SBD for temperature detection FMXB-2102 December, 2005 •General Description ■Package-TO220F-2Pin An SBD for overheating detection is incorporated together with a secondary side rectification FRD into a TO220F package.
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FMXB-2102
Package---TO220F-2Pin
O220F
D01-005EA-051215
XB2102
D01-005EA-051215
fire alarm using thermistor
sanken lot number
SANKEN power supply
Sanken marking
B105
CF35
FMXB-2102
ray 40
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PDF
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sanken power transistor
Abstract: CF35 SANKEN DIODE 5a schottky axial RW54 B105 10E01 diode ir ALLEGRO MICROSYSTEMS
Text: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters
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0E-01
0E-02
0E-03
D01-011EA-060629
sanken power transistor
CF35
SANKEN DIODE
5a schottky axial
RW54
B105
10E01 diode ir
ALLEGRO MICROSYSTEMS
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PDF
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Untitled
Abstract: No abstract text available
Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2
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2SK3711
T02-002EA-051124
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PDF
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RW54
Abstract: B105
Text: Schottky Barrier Diode RW54 July 2006 •General Description ■Package RW54 is an SBD for the high power current of 5A guarantee. Low forward voltage drop and excellent switching characteristics have been achieved. Φ6.5 axial ■Applications •DC-DC converters
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0E-01
0E-02
0E-03
D01-011EA-060629
RW54
B105
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PDF
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EKV550
Abstract: B105
Text: 50V N-ch MOSFET EKV550 January. 2006 •Features ■Package—TO-220 • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD ■Applications • DC-DC Converters • High speed switching
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EKV550
Package--TO-220
T02-005JA-060111
EKV550
B105
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE PD100GB/KP100GB_ UL;E76102 M Power Diode Module DD1 OOGB series are designed for various rectifier circuits. DD 1 OOGB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V
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OCR Scan
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PD100GB/KP100GB_
E76102
DD100GB-40
DDIOOGB-80
B-106
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PDF
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