FCH20U10
Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
FCH20U10
niec FCHS10A12
FCU20A40
FCU10UC30
FCQ10U06
FSF05B60
SA10QA03
fchs20a08
10ERB20
FCQS30A045
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schottky barrier diode b22
Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode
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OD-123
O-220F-2pin
O-251
O-252)
O-220-2pin
O-220
O-220F
O-262
schottky barrier diode b22
FCH20U10
Schottky Diode B29
fcu20a40
10ERB20
niec FCHS10A12
FCQS10A065
EC30QSA045
FCHS10A12
fchs20a08
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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Q62702-B195
Abstract: No abstract text available
Text: Silicon Tuning Varactor BBY 35 F ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code Pin Configuration Package1 BBY 35 F – Q62702-B195 Cathode: black dot, heat sink T1 Maximum Ratings
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Q62702-B195
Q62702-B195
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Q62702-B194
Abstract: Q62702-B257
Text: Silicon Tuning Varactors BBY 34 C BBY 34 D ● Hyperabrupt junction tuning diode ● Frequency linear tuning range 4 … 12 V ● High figure of merit Type Marking Ordering Code BBY 34 C – Q62702-B257 BBY 34 D Pin Configuration Package1 D Q62702-B194 Maximum Ratings
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Q62702-B257
Q62702-B194
Q62702-B194
Q62702-B257
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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IDTQS32XVH384
Abstract: QS32XVH384
Text: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS32XVH384
20-BIT
500MHz
10MHz;
32XVH384
IDTQS32XVH384
QS32XVH384
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IDTQS32XVH384
Abstract: QS32XVH384
Text: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS32XVH384 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS32XVH384
20-BIT
500MHz
10MHz;
32XVH384
IDTQS32XVH384
QS32XVH384
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IDTQS34XVH245
Abstract: QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
IDTQS34XVH245
QS34XVH245
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IDTQS34XVH2245
Abstract: QS34XVH2245 B12 nec diode
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 PRELIMINARY DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS34XVH2245
32-BIT
10MHz;
80-Pin
34XVH2245
IDTQS34XVH2245
QS34XVH2245
B12 nec diode
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IDTQS32XVH384
Abstract: QS32XVH384 SO484
Text: IDTQS32XVH384 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V/3.3V 20-BIT HIGH BANDWIDTH BUS SWITCH IDTQS32XVH384 PRELIMINARY FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC
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IDTQS32XVH384
20-BIT
500MHz
10MHz;
SO48-4)
IDTQS32XVH384
QS32XVH384
SO484
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QS32XL2384
Abstract: QS32XL384
Text: QS32XL384, QS32XL2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switches QS32XL384 QS32XL2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS32XL384,
QS32XL2384
20-Bit
QS32XL384
48-pin
QS32XL2384
QS32XL384
propQS32XL384
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diode b1c
Abstract: No abstract text available
Text: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art
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MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
MBRS1100T3/D
diode b1c
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diode A23
Abstract: QS3245 QS34X2245 QS34X245
Text: QS34X245, QS34X2245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-Bit MultiWidthTM Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS34X245 QS34X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs
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QS34X245,
QS34X2245
32-Bit
QS34X245
QS34X245
QS3245
QS34X2245
80-pin
diode A23
QS3245
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QS32X2384
Abstract: QS32X384 32x384
Text: QS32X384, QS32X2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switch QS32X384 QS32X2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs
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QS32X384,
QS32X2384
20-Bit
QS32X384
QS32X2384
QS532X384
QS32X384
32x384
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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QS32XR384
Abstract: B10-B14
Text: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs
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QS32XR384
20-Bit
48-pin
QS32XR384
MDSL-00344-00
B10-B14
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y • 1 - Cathode 2 - Anode Back of Case - Cathode APT60D20B 200V 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT60D20B
O-247
O-247AD
B1986
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Silicon Tuning Varactors BBY 34 C BBY 34 D • Hyperabrupt junction tuning diode • Frequency linear tuning range 4 . 12 V • High figure of merit Type Marking Ordering Code BBY 34 C - Q62702-B257 BBY 34 D Pin Configuration Package1’ D ° Q62702-B194
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Q62702-B257
Q62702-B194
a235bD5
B235bOS
Qbb72
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jointal Z
Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Text: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28
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JIS-C7021
40VDC
jointal Z
5n fast recovery diodes
30DL4 diode
30dl4
F10P20F
circuit SCHEMATIC DIAGRAM SMPS 12v 5A
diode RP 6040
31DF2 diode
f5kq100
smps 8085
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs
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qs34X245
34x2245
32-Bit
QS34X2245
DSL-00254-00
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