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    DIODE B8 Search Results

    DIODE B8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode b81

    Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
    Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE


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    PDF 5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009

    B80C

    Abstract: bare diode bookham diode
    Text: Data sheet 80W 9xx nm High Power Bare Laser Diode Bar Features • Bare 10mm x 1.2mm laser diode bar • 80W operating power B80C-9xx-01 • Highly reliable single quantum well MBE structure The Bookham Technology B80C-9xx-01 bare laser diode bar series has been designed to provide the


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    PDF B80C-9xx-01 B80C-9xx-01 915nm, 940nmllustrative 21CFR B80C bare diode bookham diode

    Untitled

    Abstract: No abstract text available
    Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.


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    PDF GD16521 GD16521 STM-16 OC-48 DK-2740

    laser diode for free space communication

    Abstract: GD16521-48BA GD16521-D STM-16 DIODE h4 1027ib 50W 50 ohm termination
    Text: 2.5 Gbit/s Re-timing Laser Driver GD16521 an Intel company Preliminary General Description Features laser diode. A modulation current control loop maintains a constant modulation current for the laser diode, or alternatively maintains a constant extinction ratio of the laser diode.


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    PDF GD16521 GD16521 STM-16 OC-48 DK-2740 laser diode for free space communication GD16521-48BA GD16521-D DIODE h4 1027ib 50W 50 ohm termination

    FCH20U10

    Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 FCH20U10 niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045

    schottky barrier diode b22

    Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
    Text: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode


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    PDF OD-123 O-220F-2pin O-251 O-252) O-220-2pin O-220 O-220F O-262 schottky barrier diode b22 FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    SANYO DC 303

    Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
    Text: Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.


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    PDF EN4657 FP303 FP303 2SD1623 SB05-05CP, FP303] SANYO DC 303 SB05-05CP MARKING 303

    DIN 16901 130

    Abstract: SQH5
    Text: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FS300R12KE3 DIN 16901 130 SQH5

    FS450R12KE3

    Abstract: No abstract text available
    Text: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FS450R12KE3 FS450R12KE3

    diode B87

    Abstract: No abstract text available
    Text: Technische Information / technical information FS225R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FS225R12KE3 diode B87

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one


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    PDF EN4658 FC601 FC601 SB007-03CP RA104C FC601]

    FC601

    Abstract: RA104C marking 601 SB007-03CP sanyo fc601
    Text: Ordering number:EN4658 FC601 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one


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    PDF EN4658 FC601 FC601 SB007-03CP RA104C FC601] RA104C marking 601 sanyo fc601

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


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    PDF CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FZ300R12KE3G

    Untitled

    Abstract: No abstract text available
    Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A ­Wide zener voltage range selection : 2.0V to 75V ­Surface device type mounting ­Moisture sensitivity level 1 ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    PDF BZT52C2V0K BZT52C75K 200mW OD-523F OD-523F MIL-STD-202, 60-cycle

    FZ300R12KE3G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FZ300R12KE3G FZ300R12KE3G

    FZ300R12KE3B1G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3B1G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FZ300R12KE3B1G FZ300R12KE3B1G

    FZ300R12KE3B1G

    Abstract: No abstract text available
    Text: Technische Information / technical information FZ300R12KE3B1G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter


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    PDF FZ300R12KE3B1G FZ300R12KE3B1G

    5BJC4100

    Abstract: F5BHC 5BBC3820
    Text: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting


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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code BBY53 S7s Q62702-B824


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    PDF BBY53 Q62702-B824 OT-23 H35bDS 0S35bD5

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b S B T B l 0 02 b2 fi4 03S W A P X Product specification BAT85 Schottky barrier diode N AMER PHILIPS/DISCRETE DESCRIPTION A Schottky barrier diode with an integrated protection ring against static discharges. This diode, in a SOD68 DO-34 envelope, is


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    PDF BAT85 DO-34) bb53T31

    smd diode 106a

    Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
    Text: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD


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    PDF BYG90-90 BYG90-90 OD106A b-100 7110fl2b 711002b 01032B3 smd diode 106a DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S B85 diode smd diode byg 20

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4657 _FP303 TR : NPN Epitaxial Planar Silicon Transistor No.4657 SBD : Schottky Barrier Diode I DC-DC Converter Applications F eatures • Composite type with NPN transistor and Schottky barrier diode facilitates high-density mounting.


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    PDF FP303 2SD1623 SB05-05CP,