Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE BFE 16 E Search Results

    DIODE BFE 16 E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE BFE 16 E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HUL7211

    Abstract: Error Diode BFE
    Text: Specifcations Hologram Unit HUL7211 For CD Player / Portable CD Player Features • Low voltage drive (VCC = 3 V) • Built-in I-V conversion amp. • Low power consumption laser diode Error Signal Detection Method Package Code • Focus error signal detection : SSD method


    Original     		HUL7211 LDHU01 HUL7211 Error Diode BFE PDF

    3 beam method

    Abstract: 3 beam method CD-R
    Text: Specifications HUH7285 / HUH7286 For CD-R/RW Drives 32 x writing / 48 × reading Features ● (5.0) 3.1±0.4 Reference plane HUH7285: 4 pins HUH7286: 2 pins 0.1 max. (0.52) (2.3) Focus error signal detection: SSD method Tracking error signal detection:


    Original     		HUH7285 HUH7286 HUH7285: HUH7286: LDHU06-2 3 beam method 3 beam method CD-R PDF

    HULT271

    Abstract: dvd hologram unit Laser Diode for dvd 400 mW LDHU07
    Text: Specifcations Hologram Unit HULT271 For DVD/CD Drives (Dual wavelength Hologram Unit) Features • One chip two wavelength laser diode enables the reading of DVD/CD in one package • 24 ´ reading of CD, CD-ROM From 4 ´ to 8 ´ reading of DVD, DVD-ROM


    Original     		HULT271 LDHU07 HULT271 dvd hologram unit Laser Diode for dvd 400 mW LDHU07 PDF

    CA3096

    Abstract: transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096A CA3096AE 40841 MOSFET CA3096AM96
    Text: CA3096, CA3096A, CA3096C UC T T P RO D E T E ODUC L TE PR OBSO U IT T BS L E S U A3 0 9 6 HF POSSIB January 2004 NPN/PNP Transistor Arrays Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 transistor equivalent ca3096 40841 thyristor firing circuits 3096A CA3096E CA3096AE 40841 MOSFET CA3096AM96 PDF

    CA3096

    Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
    Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096AM CA3096AM96 PDF

    40841

    Abstract: 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent CA3096A
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 2158D how to control firing angle in thyristor 3096A CA3096 558 npn CA3096AE CA3096E CA3096E equivalent PDF

    40841 MOSFET

    Abstract: 2158D CA3096 CA3096E equivalent CA3096A CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096C CA3096E
    Text: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types


    Original     		CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C 40841 MOSFET 2158D CA3096 CA3096E equivalent CA3096AE 40841 dual gate mosfet CA3096AM96 CA3096E PDF

    CA3046 equivalent

    Abstract: AN5296 Harris CA3018 CA3045
    Text: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    Original     		CA3045, CA3046 CA3045 CA3046 500MHz CA3046 equivalent AN5296 Harris CA3018 PDF

    an5296

    Abstract: CA3046 CA3045 "an5296 Application of the CA3018" CA3018 CA3045F CA3046M CA3046M96 CA3046 equivalent "Application of the CA3018"
    Text: CA3045, CA3046 Data Sheet September 1998 File Number 341.4 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    Original     		CA3045, CA3046 CA3045 CA3046 an5296 "an5296 Application of the CA3018" CA3018 CA3045F CA3046M CA3046M96 CA3046 equivalent "Application of the CA3018" PDF

    AN5296 Application note CA3018

    Abstract: CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 CA3018A AN5296 Application of the CA3018 Integrated
    Text: S E M I C O N D U C T O R CA3018, CA3018A NS EW DESIG FOR N MENDED OM November 1996 NOT REC General Purpose Transistor Arrays Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.


    Original     		CA3018, CA3018A CA3018 CA3018A CA3018 500MHz AN5296 Application note CA3018 an5296 Harris CA3018 AN5296 Application of the CA3018 "Application of the CA3018" AN5296 application note an5296 ca3018 AN5296 Application of the CA3018 Integrated PDF

    Harris CA3046

    Abstract: an5296 d143 T transistor CA3045 HARRIS AN5296 application note ca3046 CA3046 equivalent CA3045 CA3045F CA3046 Harris
    Text: CA3045, CA3046 S E M I C O N D U C T O R General Purpose NPN Transistor Arrays November 1996 Features Description • Two Matched Transistors - VBE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV - IIO Match . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA Max


    Original     		CA3045, CA3046 CA3045 CA3046 1-800-4-HARRIS Harris CA3046 an5296 d143 T transistor CA3045 HARRIS AN5296 application note CA3046 equivalent CA3045F CA3046 Harris PDF

    Diode GFK

    Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


    Original     		CD214C DO-214AB Diode GFK DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE PDF

    Diode GFK

    Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		DO-214AB RS-481-A DO-214AB) Diode GFK GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor PDF

    Diode GFK

    Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
    Text: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series


    Original     		DO-214AB RS-481-A DO-214AB) Diode GFK GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18 PDF

    Untitled

    Abstract: No abstract text available
    Text: Hologram Unit HUH7282/HUH7283 For CD-R/RW Drivers Hologram Unit 3.95±0.15 0.3 16 15 14 13 12 11 10 9 φ8.5 +0 -0.05 M Di ain sc te on na tin nc ue e/ d • Features PKG center 1 2 3 4 5 6 7 8 7x0.5±0.1=3.5±0.1 3.95±0.15 0.3±0.1 8.8±0.2 • It is developed real with window structured


    Original     		HUH7282/HUH7283 HUH7282: HUH7283: PDF

    Untitled

    Abstract: No abstract text available
    Text: Hologram Unit HUH7285/HUH7286 For CD-R/RW Drivers Hologram Unit 3.95±0.15 0.3 16 15 14 13 12 11 10 9 φ8.5 +0 -0.05 M Di ain sc te on na tin nc ue e/ d • Features PKG center 1 2 3 4 5 6 7 8 7x0.5±0.1=3.5±0.1 3.95±0.15 0.3±0.1 8.8±0.2 • It is developed real with window structured


    Original     		HUH7285/HUH7286 HUH7285: HUH7286: PDF

    diode BFT 99

    Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
    Text: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly


    Original     		CD214C DO-214AB diode BFT 99 Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor PDF

    6R190C6

    Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original     		IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19 PDF

    CA3046

    Abstract: an5296 AN5296 application note AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 CA3046 equivalent AN5296 Application of the CA3018 Integrated CA3018 Monolithic Transistor Pair
    Text: CA3046 Data Sheet May 2001 File Number 341.5 General Purpose NPN Transistor Array Features The CA3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially


    Original     		CA3046 CA3046 an5296 AN5296 application note AN5296 Application note CA3018 "Application of the CA3018" AN5296 Application of the CA3018 CA3046 equivalent AN5296 Application of the CA3018 Integrated CA3018 Monolithic Transistor Pair PDF

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30 PDF

    marking diode KE

    Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
    Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series


    Original     		CD214C DO-214AB marking diode KE diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B PDF

    Diode BFE 16 e

    Abstract: AC480V
    Text: Series M 50 Diode 60-100 Amp • DIODE Modules S iig fe - High Surge Current Rectifier Circuits Up to 1600 Volt Blocking Standard and thiee-phase diode cinuits incorporate highly e fficie n t th em a l m anagem e n t ta provide high surge capability, extended life, and lelab fe


    OCR Scan     		D-66687 Diode BFE 16 e AC480V PDF

    Untitled

    Abstract: No abstract text available
    Text: E5E D N AMER PHILIPS/DISCRETE bb53131 0D50445 b BUK453-50A BUK453-50B PowerMOS transistor T -3 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53131 0D50445 BUK453-50A BUK453-50B BUK453 inK453-50A T-39-n PDF

    Diode BFE

    Abstract: No abstract text available
    Text: Series B-2T, B-2 25-42.5 Amp • SCR/DIODE Modules B ght Standard Grcuits For AC or DC Variable Voltage O utput Up To 15KW Control over power PART NUMBER IDENTIFICATION S e rie s T y p e B-Case style C eram ic Base C u rre n t 5 - 2 5 A m ps 6 - 42.5 A m ps


    OCR Scan     		E72445) D-66687 Diode BFE PDF