diode BYW 64
Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Text: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62
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B250C5000/3300
F/250V
3nF/250V
F/400V
47nF/400V
F/50V
F/63V
F/100V
diode BYW 64
B81121 X2 mkt
TDB7812T
B81121
B32530
1nf 100v mkt
100v mkt
b81121 x2
7812T
B41822
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Diode LT 9250
Abstract: diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 diodes byw 92 diodes byw diode BYW 19
Text: S G S- TH OM SO N O STC D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) T H O M S O N -C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 02252 HIGH EFFICIENCY
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00G2252
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode LT 9250
diode BYW 92
LT 9250
diode lt 0236
5 amp diode byw 92-200
diode BYW 92-200
diodes byw 92
diodes byw
diode BYW 19
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diode BYW 92
Abstract: 5 amp diode byw 92 diode BYW 92-200 SA 9259 diode puissance 30 amp BYW 90 diode BYW 66 diodes byw 5 amp diode byw 92-200 rms p2f
Text: S G S- TH OM SO N O STC T H O M D 1 7121237 00G2252 BYW 92-50^200, R BYW 92-150 A f (R) S O N - C S F D M S IO N SEM ICONDUCTEURS DISCRETS SUPERSWITCH H IG H E F F IC IE N C Y FAST R E C O V E R Y R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT
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0DG2252
7T2C1537
0QQ22S7
diode BYW 92
5 amp diode byw 92
diode BYW 92-200
SA 9259
diode puissance 30 amp
BYW 90
diode BYW 66
diodes byw
5 amp diode byw 92-200
rms p2f
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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diode BYW 66
Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY
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BYW80150A
Q00S2M5
diode BYW 66
diode P2F
DIODE DO-220
high efficiency fast recovery diode byw
BYW 90
diode BYW 85
BYW 26
8050 2D C
diode BYW
diode BYW 60
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diode byw 81 200
Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY
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Iat100Â
diode byw 81 200
Diode BYW 59
Diode BYW 56
diode BYW 66
Q002
ANTENA
8150 diode
diode BYW
diode BYW 81
diode P2F
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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77150
Abstract: diode BYW 31 200
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT
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QGGE22Û
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
77150
diode BYW 31 200
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BYW 90
Abstract: l200c 1200C dioda ZTF 160 soae
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A, (R) 1H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT D T 'ô 3 ~ Z I 59C 022 HIGH EFFICIENCY SUPERSWITCH
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I71H1237
BYW 90
l200c
1200C
dioda
ZTF 160
soae
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diodes byw 92
Abstract: BYW 200 ZTF 160 thomson diodes diode BYW 92 diode La AV8080 diode BYW 66
Text: STC D 1• 7 ^ 5 3 7 S G S—THOMSON 59C 0 2 2 1 6 D OüüEait. 7 T-*>2~U BYW 08-50-200, R O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T SUPERSW ITCH
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BYW08
diodes byw 92
BYW 200
ZTF 160
thomson diodes
diode BYW 92
diode La
AV8080
diode BYW 66
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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Diode BYW 56
Abstract: 0224S diode BYW 19 2791T byw+36+v
Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH
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1200C
REDRE08
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
Diode BYW 56
0224S
diode BYW 19
2791T
byw+36+v
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77150
Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228
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PIAVI51
BVW77
77150
diode puissance 30 amp
diode BYW 76
diode BYW 66
BYW 77
high efficiency fast recovery diode byw
diode BYW
BYW 90
22313
diodes byw
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111EF
Abstract: BYW 200 diodes byw 78 100 T03A diode BYW 66 78150
Text: STC s G S^THQMSQN Q Goaaa3M t BYW 78-50-200, R BYW 78-150 A , (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 022 D T 'ô 3 ~ Z I HIGH EFFICIENCY V SUPERSWITCH
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
111EF
BYW 200
diodes byw 78 100
T03A
diode BYW 66
78150
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BYW77100
Abstract: BYW77-150 BVW77-150 BYW31-100 BYW31-150 BYW31-50 BYW77-100 BYW77-50 UES701 UES702
Text: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A FEATURES DESCRIPTION • • • • • • Designed to meet the efficiency'dem and of sw itchin g type power supp lies, these devices are useful in m any sw itching
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UES701
UES702
UES703
BYW31-50
BYW77-50
BYW31-100
BYW77-100
BYW31-150
BYW77-150
BYW77100
BYW77-150
BVW77-150
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Untitled
Abstract: No abstract text available
Text: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A DE S C R IP T IO N Designed to meet the efficiency demand of sw itching type power supplies, these devices are useful in m any sw itching applications.
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UES701
BYW31-50
BYW77-50
UES702
BYW31-100
BYW77-100
UES703
BYW31-150
BYW77-150
UES701
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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DYW29-150
Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
Text: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150
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UES1401
BYW29-50
BYW80-50
UES1402
BYW29-100
BYW80-100
UES1403
BYW29-150
BYW80-150
BYW29-200
DYW29-150
es140
byw80
BYW29 diode rectifier
byw29100
UES1404
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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UES302
Abstract: UM801 UES803 100-C BYW78-100 BYW78-150 BYW78-50 UES801 UES802
Text: RECTIFIERS UES801 UES802 UES803 High Efficiency, 50A and 70A BYW78-50 BYW78-100 BYW78-150 FEATURES DESCRIPTION • High Continuous Current Rating • Very Low Forward Voltage • Very Fast Switching Speeds This Series is specifically designed for operation in power switching circuits
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UES801
BYW78-50
UES802
BYW78-100
UES803
BYW78-150
20KHz.
UM801
UES302
100-C
BYW78-150
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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