chip 8-pin TL431
Abstract: TC96C555COA TC96C555CPA TC96C555EOA TC96C555EPA TC96C555MJA power oscillator
Text: 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR TC96C555 TC96C555 3A OUTPUT PROGRAMMABLE POWER OSCILLATOR FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC96C555 Power Oscillator is an easily programmed IC that can be used in simple switch-mode power supplies, diode doublers and inverters, and similar circuits where
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TC96C555
TC96C555
TC4423/4/5
25nsec
800pF.
chip 8-pin TL431
TC96C555COA
TC96C555CPA
TC96C555EOA
TC96C555EPA
TC96C555MJA
power oscillator
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Zener Diode BA11
Abstract: SFs SOT23-3 zener diode A29 flyback transformer design for mosFET Zener Diode BA19 Beckman ra6 PAH25 74ac126 PAH18 router board r52 hn
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E Rev 1.0: Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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Am186CC/CH/CH
AM186CC
186EXP/TIB
Am186CC/CH/CU
T7256
79C32
79C32
16x12
Zener Diode BA11
SFs SOT23-3
zener diode A29
flyback transformer design for mosFET
Zener Diode BA19
Beckman ra6
PAH25
74ac126
PAH18
router board r52 hn
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sensor IN4148
Abstract: 50k trimpot DIODE IN4148 TelCom Semiconductor datasheet AN7 trimpot datasheet sensor IN4148 datasheet TC7106 IN4148 TC04
Text: SOLVE SENSOR OFFSET PROBLEMS WITH TC7106 APPLICATION NOTE 7 SOLVE SENSOR OFFSET PROBLEMS WITH TC7106 BY WES FREEMAN Design engineers sometimes have to interface the TC7106 and similar ADCs to “non-ideal” sensors. A very common problem is that the sensor often does not give a
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TC7106
TC7106
sensor IN4148
50k trimpot
DIODE IN4148
TelCom Semiconductor
datasheet AN7
trimpot datasheet
sensor IN4148 datasheet
IN4148
TC04
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automatic change over switch circuit diagram
Abstract: RELECO c3 a30 fx 24 v dc RELECO C3-A30 FX 24 VDC RELECO C4-A40 C3-A30, RELECO C5-A30, RELECO C2-A20, RELECO C9-A41, RELECO IEC 947 EN60947 RELECO C4-A40 DX
Text: Benefits of the new Five colours for an easier identification of coil voltage AC red: 230 Vac North America 120 Vac dark red: others Vac system Push-to-Test-Pull-to-Lock button (PTPL) grey: Vac/dc DC C dark blue: others Vdc Coil voltage marked on the top face of the relay
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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diode c2s
Abstract: 1T364 sony tuners
Text: 4 TE D SONY CORP/ COMPONENT PRODS ISONY f l 3 û 2 3 f l 3 OGQEÔÔ7 3 1T364 S O N Y . T - 0 7 - ! 1Ì Silicon Variable Capacitance Diode Description 1T364 Is a variable capacitance diode designed for the tuning of wide band multichannel CATV tuners. Package Outline
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23fl3
1T364
1T364
470MHz)
C2/C25)
1T364-T7
1T364-T8
diode c2s
sony tuners
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sony tuners
Abstract: C25 diode sony tuner radio 1T359 DIODE C2 7
Text: SONY CORP/COMPONENT PRODS MTE 0 3 f i E 3f l3 D 000200=1 7 ISONY 1T359 S O N Y . Silicon Variable C ap a cita n ce Diode Description The 1 T 3 5 9 is a variable cap a cita n ce diode for electronic tuning, designed for radio or T V tuners. t- o 7 - n Package Outline
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1T359
1T359
C2/C25)
sony tuners
C25 diode
sony tuner radio
DIODE C2 7
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1XGH10N100U1
Abstract: No abstract text available
Text: Low VCE{sat IGBT with Diode High speed IGBT with Diode IXGH10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30
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IXGH10N100U1
IXGH10N100AU1
1XGH10N100U1
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C25P05Q
Abstract: C25P06Q
Text: SCHO TIKY BARRIER DIODE C2SPOSQ C25P06Q 2 7 .7 A /5 0 -6 0 V FEATURES • Similar to TO-247AC TO-3P Case • Dual Diodes - Cathode Comaon • Low Forward Voltage Drop •Low Power Loss, High Efficiency ° High Surge Capability • 20 Volts thru 100 Volte Types Available
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A/50-60V
C25P06Q
O-247AC
47IJISI
571T7TÃ
C25P050
C25P05Q
C25P06Q
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IXSN62
Abstract: No abstract text available
Text: 4 b û b 2 2 b 0 0 0 1 5 2 b 7êb « I X Y DIXYS IXSN62N60U1 IGBT with Diode IC25 V CES Combi Pack CE sat = 90 A = 600 V = 2.5 V High Short Circuit SOA Capability Preliminary data Symbol Test Conditions v’ ces vtcor Tj v QES v OEM 'c2S = 25'C to Maximum Ratings
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IXSN62N60U1
OT-227
IXSN62
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b263
Abstract: 19 247 V 4836 v 4836 HJC.1
Text: aixYs Ultra-Low V IGBT with Diode IXGH 31N60U1 Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25-C 40 A ^C90 Tc = 90°C 31 A ^CM
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31N60U1
O-247
B2-63
b263
19 247 V 4836
v 4836
HJC.1
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1XGP12N6
Abstract: No abstract text available
Text: Low V CE sat IGBT with Diode IXGP12N60U1 V CES CE(sat) Symbol Test Conditions v CES T j = 2 5 °C to 150CC 600 V V COR Tj = 25°C to 150°C; RQE = 1 MQ 600 V v GES Continuous ±20 V v GEM T ransient ±30 V ^C2S Tc = 25”C 24 A Maximum Ratings Tc = 90”C
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IXGP12N60U1
T0-220
B2-27
XOP12N60U1
B2-28
1XGP12N6
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q5t3
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C
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32N60AU1
O-247
one100C
q5t3
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSH 15N120AU1 ^C25 V CES SCSOA Capability CE sat Symbol Test Conditions V CES T , = 25°C to 150°C 1200 V vCGR T j = 25°C to 150°C; ReE= 1 MQ 1200 V v vGEM C ontinuous T ransient ±20 ±30 V V ^C2S ^C90 ^CM T c = 25°C T c = 90” C T c = 25°C , 1 ms
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15N120AU1
O-247
-100/ps;
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Untitled
Abstract: No abstract text available
Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90
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IXGH39N60BD1
O-247
125CC,
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HVC358B
Abstract: HVC367
Text: DIODE llg^-IS JüS ÎP lÜ E ?^:# “i ^ — K Application Package code MPAK Tuning BS/CS Tuner URP UFP VCO UHF Tuning URP URP UFP URP VHF Tuning TV Tuner UFP AFC MPAK LLD URP UFP URP VCO UFP MPAK SÉRIES Variable capacitance diodes for electronic tuning
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HVM11
HVM15
HVU12
HVU314
HVU316
HVC317B
HVU356
HVU202A
HVC202A
HVU200A
HVC358B
HVC367
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0DQ154Q
Abstract: No abstract text available
Text: MbflbSEb 0DQ154Q 05b B I X Y □IXYS K3BT with Diode IXSN50N120AU1 C25 V CES High Short Circuit SOA Capability CE sat = 75 A = 1200 V = 3.7 V 2 O Preliminary data (09/93) J W ) Symbol Test Conditions v CE8 Tj = 25‘ C to 150'C 1200 V V«* Tj = 25'C to 150'C; R ^ = 1 M il
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0DQ154Q
IXSN50N120AU1
OT-227
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ixsn35n100au1
Abstract: No abstract text available
Text: 4feflfc>2Sb OOOITM? D3M • IXY n ix Y S IXSN35N100AU1 PRELIMINARY DATA SHEET IGBT miniBLOC with Diode C 25 VC ES i f V C E sat S ym bol T e s t C o n d itio n s V CES T j =25°C to 150°C 600 V vCGR T , = 25°C to 150°C; R „ = 1 MQ 600 V V GES C ontinuous
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IXSN35N100AU1
-15A/ijs,
80A/us
D-68916;
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1NS14
Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S
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SQ1213A
MV83Z
MV833
MVB34
MV835
MVS36
MV837
MV838
MVB40
1NS14
1N487A
G610A
1N473A
1MH12
PEC 736
amk 30-2
HA1I34A
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Text: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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RE79-24
hitachi mosfet power amplifier audio application
2SK215 equivalent
PM4550C
2sd667 2sb647
2SD667 equivalent
2SJ99
K429
HITACHI 2SJ56
k399
Hitachi 2sk176 2sj56
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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p-channel smd marking code tm
Abstract: smd marking code diode ME SMD mosfet MARKING code TJ
Text: International Rectifier Iö R P D - 9 .1 2 6 8 E IRF7506 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel M O S FE T Very Small SO IC Package Low Profile <1.1 mm Available in Tape & Reel
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IRF7506
p-channel smd marking code tm
smd marking code diode ME
SMD mosfet MARKING code TJ
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K2057
Abstract: 2SK2236 k20s 2SK2146 2sk1855 2SK2057 2SK2150 k205 2SK185 2SK1854
Text: POWER MOS FET 3.7T-MOSIII*5 V dss= 250~600V type High withstanding series, well suited for applications with Ballast and A C=100V IN switching power supplies. • G uaran teed V gss = ± 30V for all types ■ Im proved high w ithstanding c a rac te ristic s by optimizing the cell configuration
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2SK1544
T0-220
T0-220AB
T0220FL/SM
K2057
2SK2236
k20s
2SK2146
2sk1855
2SK2057
2SK2150
k205
2SK185
2SK1854
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A735
Abstract: No abstract text available
Text: Semiconductor, Inc. TC125 TC126 PFM STEP-UP DC/DC REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC125/6 step-up Boost switching regulators fur nish output currents to a maximum of 80 mA (V in = 2V, V out = 3V) with typical efficiencies above 80%. These devices
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TC125
TC126
OT23-5
TC125)
TC126)
TC125/6
TC125/6-01
TC125/6-01
A735
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