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    DIODE DB 900 Search Results

    DIODE DB 900 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE DB 900 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA4VAT907-1061T

    Abstract: No abstract text available
    Text: High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT907-1061T V3 Features • • • • • Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical 1MHz Offset,


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    PDF MA4VAT907-1061T 77Volts MA4VAT907-1061T

    Untitled

    Abstract: No abstract text available
    Text: MA4VAT904-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz M/A-COM Products Rev. V3 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc


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    PDF MA4VAT904-1061T MA4VAT904-1061T

    Untitled

    Abstract: No abstract text available
    Text: MA4VAT904-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V4 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package


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    PDF MA4VAT904-1061T MA4VAT904-1061T

    Untitled

    Abstract: No abstract text available
    Text: MA4VAT907-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V5 Features • • • • • Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical 1MHz Offset,


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    PDF MA4VAT907-1061T MA4VAT907-1061T

    MA4VAT904-1061T

    Abstract: No abstract text available
    Text: High IP3 PIN Diode Variable Attenuator 0.80-1.0 GHz Features • • • • • • Useable Bandwidth: 0.60GHz to 1.2 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical +45 dBm IIP3, Low Loss Typical SOIC-8 Surface Mount Package


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    PDF 60GHz MA4VAT904-1061T

    band variable attenuators and AGC

    Abstract: MA4VAT907-1061T
    Text: MA4VAT907-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V5 Features • • • • • Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical 1MHz Offset,


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    PDF MA4VAT907-1061T MA4VAT907-1061T band variable attenuators and AGC

    MA4VAT904-1061T

    Abstract: No abstract text available
    Text: MA4VAT904-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz Rev. V4 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package


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    PDF MA4VAT904-1061T MA4VAT904-1061T

    rf attenuator soic

    Abstract: MA4VAT904-1061T
    Text: High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz MA4VAT904-1061T V2 Features • • • • • • 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 45 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc SOIC-8 Surface Mount Package


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    PDF MA4VAT904-1061T MA4VAT904-1061T rf attenuator soic

    698-798MHz

    Abstract: Microwave PIN diode VFVA500-200
    Text: Advanced Data Sheet VFVA500-200 PIN Diode Voltage Variable Attenuator MICROWAVE PRODUCTS GROUP 600 – 900 MHz Features        Fully integrated solution; Easy to implement 0-5 V control range 45 dBm IIP3 25 dB attenuation range 1.2 dB insertion loss


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    PDF VFVA500-200 VFVA500-200 RevF0910 698-798MHz Microwave PIN diode

    Untitled

    Abstract: No abstract text available
    Text: Advanced Data Sheet VFVA500-200 PIN Diode Voltage Variable Attenuator MICROWAVE PRODUCTS GROUP 600 – 900 MHz Features ¾ ¾ ¾ ¾ ¾ ¾ ¾ Fully integrated solution; Easy to implement 0-5 V control range 45 dBm IIP3 25 dB attenuation range 1.2 dB insertion loss


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    PDF VFVA500-200 VFVA500-200 RevE0710

    Untitled

    Abstract: No abstract text available
    Text: High IP3 PIN Diode Variable Attenuator 0.60-1.2 GHz Features • • • • • • Large Useable Bandwidth: 0.60 GHz to 1.2 GHz 1.0 dB Insertion Loss 14 dB Return Loss, Typical 25 dB Attenuation, Typical +50 dBm IP3 SOIC-8 Package MA4VAT907-1061T V1 PIN Configuration


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    PDF MA4VAT907-1061T

    Untitled

    Abstract: No abstract text available
    Text: MA4VAT907-1061T High IIP3 PIN Diode Variable Attenuator 0.8 - 1.0 GHz M/A-COM Products Rev. V4 Features • • • • • Bandwidth: 0.80 GHz to 1.0 GHz 1.0 dB Insertion Loss, Typical 12 dB Return Loss, Typical 25 dB Attenuation, Typical 50 dBm Input IP3, Typical 1MHz Offset,


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    PDF MA4VAT907-1061T MA4VAT907-1061T

    DS0492

    Abstract: DS0432 33dBm
    Text: MODEL NUMBER DS0492 FEATURES • 5 - 200 MHz • 1 Watt CW Thru • 0.5 dB Insertion Loss • +43 dBm 3rd Order I.P. 1 Watt PIN Diode SP2T • +33 dBm 0.1 dB Compression • Non-Reflective • 14 Pin DIP • See DS0432 for 200-900 MHz Version SP2T DAICO Industries


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    PDF DS0492 DS0432 DS0492 33dBm

    1100 CHIP RESISTOR NETWORK

    Abstract: No abstract text available
    Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW610B-1 Layout Features ♦ ♦ ♦ V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction


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    PDF MA4SW610B-1 MA4SW610B-1 1100 CHIP RESISTOR NETWORK

    Untitled

    Abstract: No abstract text available
    Text: AT65-0008 Voltage Variable Attenuator, 900 - 2500 MHz SO-8 Features       V 5.00 High Third Order Intercept Point Surface Mount Package 25 dB Dynamic Range ±5% Operating Bandwidth PIN Diode Based Single Control Voltage Description M/A-COM’s AT65-0008 is a PIN diode based voltage


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    PDF AT65-0008 AT65-0008 AT65-0008TR AT65-0008-TB

    Untitled

    Abstract: No abstract text available
    Text: AT65-0008 Voltage Variable Attenuator 900 - 2500 MHz SO-8 Features • • • • • • High Third Order Intercept Point Surface Mount Package 25 dB Dynamic Range ±5% Operating Bandwidth PIN Diode Based Single Control Voltage Description M/A-COM’s AT65-0008 is a PIN diode based voltage variable


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    PDF AT65-0008 AT65-0008

    AT65-0008

    Abstract: AT65-0008-TB AT65-0008TR MS-012AA
    Text: AT65-0008 Voltage Variable Attenuator, 900 - 2500 MHz SO-8 Features n n n n n n V 5.00 High Third Order Intercept Point Surface Mount Package 25 dB Dynamic Range ±5% Operating Bandwidth PIN Diode Based Single Control Voltage Description M/A-COM’s AT65-0008 is a PIN diode based voltage


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    PDF AT65-0008 AT65-0008 AT65-0008TR AT65-0008-TB AT65-0008-TB AT65-0008TR MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: AT65-0008 Voltage Variable Attenuator, 900 - 2500 MHz SO-8 Features n n n n n n V 6.00 High Third Order Intercept Point Surface Mount Package 25 dB Dynamic Range ±5% Operating Bandwidth PIN Diode Based Single Control Voltage Description M/A-COM’s AT65-0008 is a PIN diode based voltage


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    PDF AT65-0008 AT65-0008

    PIN diode switch

    Abstract: SN62 PB36 ag2 solder preform SN62 PB36 ag2 MA4SW510B-1 MA4SW610B-1
    Text: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description


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    PDF MA4SW610B-1 MA4SW510B-1 MA4SW610B-1 PIN diode switch SN62 PB36 ag2 solder preform SN62 PB36 ag2

    SN62 PB36 ag2 solder preform

    Abstract: SN62 PB36 ag2 MA4SW510B-1
    Text: MA4SW510B-1 SP5T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.8 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description


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    PDF MA4SW510B-1 MA4SW510B-1 SN62 PB36 ag2 solder preform SN62 PB36 ag2

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET DD02-92, DD02-92LF: Directional Detector Features Frequency coverage: 650 MHz to 3.0 GHz Typical insertion loss < 0.2 dB to 2.3 GHz ● Typical directivity > 23 dB ● Small outline SC-88 6 Lead SC-70 ● Built-in temperature compensating diode


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    PDF DD02-92, DD02-92LF: SC-88 SC-70) J-STD-020 DD02-92 DD01-92

    MA4VAT900-1277T

    Abstract: No abstract text available
    Text: MA4VAT900-1277T HMIC PIN Diode Variable Attenuator 0.8 - 1.0 GHz Features Rev. V3 MLP 3mm Package—Circuit Side View • • • • • • • Bandwidth: 0.80 GHz to 1.00 GHz <1.0 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 24 dB Attenuation, Typical


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    PDF MA4VAT900-1277T MA4VAT900-1277T

    Untitled

    Abstract: No abstract text available
    Text: MA4VAT900-1277T HMIC PIN Diode Variable Attenuator 0.8 - 1.0 GHz Features Rev. V3 MLP 3mm Package—Circuit Side View • • • • • • • Bandwidth: 0.80 GHz to 1.00 GHz <1.0 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 24 dB Attenuation, Typical


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    PDF MA4VAT900-1277T MA4VAT900-1277T

    DS0432

    Abstract: DS0492
    Text: FEA TU R ES & 5 - 200 MHz 1 Watt CW Thru 0.5 dB Insertion Loss +43 dBm 3rd Order I.P. +33 dBm 0.1 dB Compression Non-Reflective 14 Pin DIP MODEL NO. DS0492 1 Watt PIN Diode SP2T SP2T See DS0432 for 200 - 900 MHz Version GND 14 GND 13 GND RF IN GND 12 11 10


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    PDF DS0432 DS0492 DS0492