Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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O-252
60747and
20070320a
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Delete vendor CAGE 27014. Change vendor CAGE 18714 to 34371. Add vendor CAGE 01295. Change drawing CAGE code to 67268. Change to table II and figure 4. Editorial changes throughout. - mbk 90-09-14 Michael A. Frye
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MIL-PRF-38535.
MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Update boilerplate to MIL-PRF-38535 requirements. - LTG 06-11-21 Thomas M. Hess B Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. LTG 13-04-25 Thomas M. Hess REV SHEET REV B B SHEET
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MIL-PRF-38535
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Untitled
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Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add case outline 2 (square chip carrier package) for vendor CAGE 27014. 87-05-28 N. A. Hauck B Update boilerplate to MIL-PRF-38535 requirements. – jak 01-12-12 Thomas M. Hess C Update boilerplate to MIL-PRF-38535 requirements. - LTG
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MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Correct title to accurately describe device. Update boilerplate to MIL-PRF-38535 requirements. - LTG 07-01-24 Thomas M. Hess B Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. LTG
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MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Convert to standardized military drawing format. Technical changes to table I. Editorial changes throughout. 89-11-16 M. A. Frye B Technical changes in 1.4 and table I. Editorial changes throughout. 91-12-16
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MIL-PRF-38535
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Untitled
Abstract: No abstract text available
Text: HCPL-576x* 5962-8947701 AC/DC to Logic Interface Hermetically Sealed Optocouplers Data Sheet Description Features These devices are single channel, hermetically sealed, voltage/current threshold detection optocouplers. The products are capable of operation and storage over the
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HCPL-576x*
MIL-PRF-38534
QML-38534
MIL-PRF-38534.
5968-9404E,
5988-3098EN
AV02-3836EN
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R329-92. - WLM 92-10-30 Monica L. Poelking B Correct title to accurately describe device function. Add notes to figure 4, switching waveforms and test circuit. Update boilerplate to MIL-PRF-38535
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5962-R329-92.
MIL-PRF-38535
MIL-PRF-38535
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82m21a
Abstract: AUIRF auirf33 AEC-Q101-002 AUIRF3315STRR
Text: PD - 97733 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l Advanced Planar Technology Low On-Resistance l Dynamic dV/dT Rating l l 175°C Operating Temperature Fast Switching l Fully Avalanche Rated l l l l AUIRF3315S D G S Repetitive Avalanche Allowed up to
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AUIRF3315S
82m21a
AUIRF
auirf33
AEC-Q101-002
AUIRF3315STRR
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Untitled
Abstract: No abstract text available
Text: PD - 97733 AUTOMOTIVE GRADE AUIRF3315S HEXFET Power MOSFET Features l Advanced Planar Technology Low On-Resistance l Dynamic dV/dT Rating l l 175°C Operating Temperature Fast Switching l Fully Avalanche Rated l l l l D G S VDSS RDS on max. ID Repetitive Avalanche Allowed up to
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AUIRF3315S
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Untitled
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Text: PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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6384A
AUIRF2807
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AUIRF2807
Abstract: No abstract text available
Text: PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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6384A
AUIRF2807
AUIRF2807
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diode DLA 5.9
Abstract: AUF2807
Text: PD - 96384 AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRF2807
diode DLA 5.9
AUF2807
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Untitled
Abstract: No abstract text available
Text: PD - 96365B AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant
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96365B
AUIRF7316Q
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Untitled
Abstract: No abstract text available
Text: PD - 97697A AUTOMOTIVE GRADE AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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7697A
AUIRF3808
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Untitled
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Text: AUTOMOTIVE GRADE PD - 97697A AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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7697A
AUIRF3808
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AUIRL1404S
Abstract: AUIRL1404 AN-994 3L-TO-262 diode DLA 5.9
Text: PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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6385A
AUIRL1404S
AUIRL1404L
AUIRL1404S
AUIRL1404
AN-994
3L-TO-262
diode DLA 5.9
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Untitled
Abstract: No abstract text available
Text: AUTOMOTIVE GRADE AUIRF7316Q HEXFET Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free, RoHS Compliant
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AUIRF7316Q
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Untitled
Abstract: No abstract text available
Text: PD - 96385 AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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AUIRL1404S
AUIRL1404L
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Untitled
Abstract: No abstract text available
Text: PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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6385A
AUIRL1404S
AUIRL1404L
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IRS 640
Abstract: IRS 510
Text: AUTOMOTIVE GRADE PD - 97697 AUIRF3808 HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
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AUIRF3808
IRS 640
IRS 510
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310A tube
Abstract: No abstract text available
Text: PD - 97698 AUTOMOTIVE GRADE AUIRF3808S HEXFET Power MOSFET Features ● ● ● ● ● ● ● ● ● Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax
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AUIRF3808S
310A tube
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Untitled
Abstract: No abstract text available
Text: Interconnection Systems Selection Guide 82750 Revised 7-95 Magnet Wire Splices and Terminals AMPLIVAR Terminals and Splices Magnat Wire Terminals (AMPLIVAR) Product Facts • Compression crimp eliminates cold solder points, weld burns and wire enbrittlement usually
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