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    DIODE E5 Search Results

    DIODE E5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE E5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A2CS, E50A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2010. 1. 28 Revision No : 0 1/2


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    PDF E50A2CS, E50A2CR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES 2002. 4. 16 Revision No : 5 1/1


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    PDF E50A21VBS, E50A21VBR

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A2CBS, E50A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR + Type (- Type)


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    PDF E50A2CBS, E50A2CBR E50A2CBS 100mA, 100ms 100mA

    alternator diode 50a

    Abstract: E50A2CBR E50A2CBS alternator diode
    Text: SEMICONDUCTOR E50A2CBS, E50A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS E50A2CBR + Type (- Type)


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    PDF E50A2CBS, E50A2CBR E50A2CBS 100mA, 100ms 100mA alternator diode 50a E50A2CBR E50A2CBS alternator diode

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A27VBS/SA, E50A27VBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Zener Voltage : 27V Typ. POLARITY E50A27VBS/SA (+ Type) E50A27VBR/RB (- Type) K


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    PDF E50A27VBS/SA, E50A27VBR/RB E50A27VBS/SA 100mA, 100mS

    E50A27VBR

    Abstract: E50A27VBS 50A ZENER alternator diode 50a
    Text: SEMICONDUCTOR E50A27VBS/SA, E50A27VBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Zener Voltage : 27V Typ. POLARITY E50A27VBS/SA (+ Type) E50A27VBR/RB (- Type) K


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    PDF E50A27VBS/SA, E50A27VBR/RB E50A27VBS/SA 100mA, 100mS E50A27VBR E50A27VBS 50A ZENER alternator diode 50a

    alternator diode

    Abstract: alternator diode 50a E50A2CBR E50A2CBS
    Text: SEMICONDUCTOR E50A2CBS/SA, E50A2CBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS/SA + Type E50A2CBR/RB


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    PDF E50A2CBS/SA, E50A2CBR/RB E50A2CBS/SA E50A2CBR E50A2CBRB 100mA, 100ms 100mA alternator diode alternator diode 50a E50A2CBR E50A2CBS

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A2CBS/SA, E50A2CBR/RB TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=50A. Repetive Peak Reverse Voltage : VRRM=200V POLARITY E50A2CBS/SA + Type E50A2CBR/RB


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    PDF E50A2CBS/SA, E50A2CBR/RB E50A2CBS/SA E50A2CBRB E50A2CBSA 100mA, 100ms 100mA

    alternator diode

    Abstract: alternator diode 50a E50A2CPS
    Text: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)


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    PDF E50A2CPS, E50A2CPR E50A2CPS 100mA, 100mA 100ms alternator diode alternator diode 50a E50A2CPS

    Zener 21V

    Abstract: E50A21VBR E50A21VBS
    Text: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 21V Typ. POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) K H MAXIMUM RATING (Ta=25℃)


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    PDF E50A21VBS, E50A21VBR E50A21VBS 100mA, 100mS Zener 21V E50A21VBR E50A21VBS

    32V zener

    Abstract: alternator diode 50a alternator diode zener diode application E50A37VBR E50A37VBS
    Text: SEMICONDUCTOR E50A37VBS, E50A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ᴌAverage Forward Current : IO=50A. ᴌZener Voltage : 37V Typ. POLARITY E50A37VBS (+ Type) E50A37VBR (- Type) K H MAXIMUM RATING (Ta=25ᴱ)


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    PDF E50A37VBS, E50A37VBR E50A37VBS 100mA, 100mS 32V zener alternator diode 50a alternator diode zener diode application E50A37VBR E50A37VBS

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Zener Voltage : 37V Typ. F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS


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    PDF E50A37VPS, E50A37VPR E50A37VPS 100mA, 100mS

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A27VBS, E50A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 27V Typ. POLARITY E50A27VBS (+ Type) E50A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)


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    PDF E50A27VBS, E50A27VBR E50A27VBS 100mA, 100mS

    DI 380 Transistor

    Abstract: E50A27VBR E50A27VBS
    Text: SEMICONDUCTOR E50A27VBS, E50A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 27V Typ. POLARITY E50A27VBS (+ Type) E50A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃)


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    PDF E50A27VBS, E50A27VBR E50A27VBS 100mA, 100mS DI 380 Transistor E50A27VBR E50A27VBS

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A21VBS, E50A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=50A. ・Zener Voltage : 21V Typ. POLARITY E50A21VBS (+ Type) E50A21VBR (- Type) K H MAXIMUM RATING (Ta=25℃)


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    PDF E50A21VBS, E50A21VBR E50A21VBS 100mA, 100mS

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ・Average Forward Current : IO=50A. E L2 ・Reverse Voltage : 200V Min. F1 L1 G POLARITY B E50A2CPS (+ Type) E50A2CPR (- Type)


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    PDF E50A2CPS, E50A2CPR E50A2CPS 100mA, 100mA 100ms

    alternator diode 50a

    Abstract: E50A2CS E50A2CR
    Text: SEMICONDUCTOR E50A2CS, E50A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 A1 D3 FEATURES B1 B2 D2 ・Repetitive Peak Reverse Voltage : VRRM=200V. D1 ・Average Forward Current : IO=50A. E MAXIMUM RATING Ta=25℃


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    PDF E50A2CS, E50A2CR alternator diode 50a E50A2CS E50A2CR

    mo299

    Abstract: TAC10 lt416 LHS01
    Text: LM96063 Remote Diode Digital Temperature Sensor with Integrated Fan Control General Description • Integrated PWM fan speed control output supports high The LM96063 is remote diode temperature sensors with integrated fan control that includes remote diode sensing. The


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    PDF LM96063 2N3904, mo299 TAC10 lt416 LHS01

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 ^ 3 1 0 D lt7 1 ti E • B Y588 T-£>/-/6~ BASE-EMITTER EFFICIENCY DIODE Solid-glass passivated rectifier diode in a hermetically sealed axial-leaded glass envelope. The device is intended for use as efficiency diode in horizontal deflection circuits between base and emitter terminals


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    PDF BY588

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ LASER DIODE NDL7408P Series 1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER DESCRIPTION NDL7408P Series is a 1 310 nm laser diode coaxial module with single mode fiber. Quantum Well st-MQW structure and a built-in InGaAs monitor photo diode.


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    PDF NDL7408P NDL7408PL TA-NWT-000983

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


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    PDF Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74

    MTX70A

    Abstract: FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN
    Text: ì Power Modules STANDARD THYRISTOR MODULE STANDARD DIODE MODULE 27 THYRISTOR-DIODE MODULE 28 FAST THYRISTOR / DIODE MODULE 29 NON-INSULATION POWER MODULE CAPSULE VERSION POWER MODULE & MOUNTING CLAMP BRIDGE RECTIFER MODULE 30-31 31 32-34 £ 4 t S / i B t W f d U : « * « » SCHOTTKY/SUPER FAST RECOVERY DIODE MODULE 34-35


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    PDF 3s300A ZG50HFL120C1S SKM75GB128DN BSM50GB120DLC ZG75HFL120C1S SKM100GB128DN BSM75GB120DLC ZG100HFL120C1S SKM145GB128DN BSM100GB120DLCK MTX70A FF300R12KS4 MOTOR SOFT START MDS100 mfq 60A bridge rectifier SSC AC welder IGBT circuit ZG300HFL120C2S 3phase bridge diode mds 60 SKM200GB125DN