hp11612a
Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Text: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑
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5091-4932E
5966-0780E
order50
hp11612a
anzac power divider
HP8565A
HP83595A
HP8565
HP436A
HP8640B
Microwave PIN diode
pin diode microstrip
0805Z473
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LN189S
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo
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LN189S
LN189S
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LN189L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol
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LN189L
LN189L
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LN66
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l
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Panasonic circuit breaker
Abstract: TPS2330 EEUFC1H471L IRF7413 TPS2331 SLVA116
Text: Application Report SLVA116 – May 2002 A FET OR-ing Circuit For Fault-Tolerant Power Systems Ed Jung PMP Systems Power ABSTRACT Fault-tolerant power systems commonly achieve redundancy by diode OR-ing the outputs of several power supply modules. The OR-ing circuit is inefficient if the diode forward
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SLVA116
TPS2331
Panasonic circuit breaker
TPS2330
EEUFC1H471L
IRF7413
SLVA116
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fire detector
Abstract: 100HZ 1U20 47PF GL1F201 IS1U20
Text: PREPARED BY: I DATE: SPEC No. ,-. ED-95093 ,. OPTO-ELEtiC @”C DEVICES DW.”. SPECIFICATION / \ DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. GL1F201 \ 1. These specification sheets include the contents under the copyright of Sharp Corporation “Sharp”).
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ED-95093
GL1F201
fire detector
100HZ
1U20
47PF
GL1F201
IS1U20
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GaAs 850 nm Infrared Emitting Diode
Abstract: LN52
Text: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur
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ZENER 6.2V DO-214AC
Abstract: No abstract text available
Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
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SML4728
SML4763A
DO-214AC
25ALS
ZENER 6.2V DO-214AC
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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ca3141e
Abstract: No abstract text available
Text: f ü H A R R CA3141 IS High-Voltage Diode Array For Commercial, Industrial & Military Applications August 1991 Features D escription • M a tch ed M on olithic C o n s tru c tio n - V p for Each D iode Pair M a tch ed to W ithin 0 .5 5 m V Typ at Ip = 1m A
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CA3141
CA3141E
CA3141
16-lead
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: A D VA N C ED PO W ER Te c h n o lo g y 1 - Cathode 2 - Anode Back of Case - Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30 A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT30D100B
APT30D90B
APT30D80B
O-247AD
3000-sso
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SLD201V
Abstract: sld201 SLD201U TO50 package noise diode
Text: SLD201U/V SONY. 20mW High Power Laser Diode Description Package O utline SLD201 U /V is a gain-g u id ed h ig h -p o w e r laser diode fabricated by MOCVD. SLD201U U n it: mm trinci 51 OC Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs d ouble-hetero laser diode.
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SLD201
SLD201U
SLD201V
720kHz
30kHz
SLD201U/V
SLD201V
SLD201U
TO50 package
noise diode
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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CLM185T2
Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Text: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q
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CLM185-2
CLM285-2
CLM385-2
CLM185
20yiA
CLM185T2
CLM285T2
CLM285d.
4432E
CLM285Y2
CLM385N2
CLM385T2
CLM385Y2
120PV
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GL3201
Abstract: GL3201A GL3202 audio signal detector circuit fm detector coil audio rms detector GL320
Text: GL3201A/GL3202 TV SOUND IF AMP Features Pin Configuration • Electronic attenuator replaces conventional volume control.range>60 dB • Differential peak detector requires one single tun ed coil • Internal Zener diode regulated supply • Inherent high stability
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GL3201A/GL3202
GL3201A
GL3202
L3201A/GL3202
GL3201
GL3201A
GL3202
audio signal detector circuit
fm detector coil
audio rms detector
GL320
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Untitled
Abstract: No abstract text available
Text: D e57W GÜQ2mb T3Q A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anode Back of Case - Cathode APT15D100K 1000V 15A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE I PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT15D100K
O-220
O-22QAC
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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6bv8
Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Text: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and
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ET-T981
600-milliampere
6bv8
diode 12-55 c
capacitor RGF
general electric
RK 1900
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Te c h n o l o g y 1 - Cathode 2 - Anods Back of Caaa -Cathoda APT30D40B 400V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS > Anti-Parallel Dloda -Switchmoda Power Supply -Invartars
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APT30D40B
O-247
O-247AD
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Untitled
Abstract: No abstract text available
Text: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode at E-C Lead Form ed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1“ Suffix)
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MJD122
300uS,
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Coaxial Pin Diode Attenuator 700 -1100 MHz MLCT 700D V3.00 Features • • • • • 80dB Dynamic Range High Setting Accuracy TTL Compatible 1 Watt Power Rating Designed for Cellular Applications Description D esig n ed prim arily for com m ercial applications the
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ip olivetti cd
Abstract: GL100MD1MP1 GL100MD1
Text: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.
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ED-02157
GL100MD1MP1
ip olivetti cd
GL100MD1
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