diode marking code cz
Abstract: marking code e6
Text: DISCRETE SEMICONDUCTORS DATA SHEET PESD5V0S1BA Low capacitance bi-directional ESD protection diode in SOD323 Product specification 2004 Mar 22 Philips Semiconductors Product specification Low capacitance bi-directional ESD protection diode in SOD323 PESD5V0S1BA
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OD323
IEC-61000-4-5
SCA76
R76/01/pp11
diode marking code cz
marking code e6
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Untitled
Abstract: No abstract text available
Text: BAT66. Silicon Schottky Diode • Power rectifier diode • For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purpose BAT66-05 " , , ! ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT66.
BAT66-05
OT223
50/60Hz,
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Untitled
Abstract: No abstract text available
Text: BAS52. Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
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Untitled
Abstract: No abstract text available
Text: BAT165. Silicon Schottky Diode • Medium current Schottky rectifier diode • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Miniature plastic package for surface mounting SMD BAT165 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT165.
BAT165
OD323
50/60Hz,
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Untitled
Abstract: No abstract text available
Text: BAT240. Silicon Schottky Diode • Rectifier Schottky diode for telecommunication and industrial applications • High reverse voltage • For power supply applications • For clamping and protection in high voltage applications BAT240A 3 D 1 D 2 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT240.
BAT240A
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sot363 marking DATE code
Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727
sot363 marking DATE code
BCR108S
IEC61000-4-4
ESD5V0S5US-E6727
ESD5V0S5US
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ESD5V0S5US-E6727
Abstract: No abstract text available
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727
E6727*
ESD5V0S5US-E6727
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Untitled
Abstract: No abstract text available
Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)
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IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
E6727*
OT363
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composition of material used in zener diode
Abstract: IEC-1000-4-2
Text: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05
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65 diode 1N
Abstract: IEC-1000-4-2 RSA6.1J4
Text: RSA6.1J4 Diodes ESD Protection diode RSA 6.1J4 1.6 + − 0.1 E61 5 (4) 0.5 0.5 1.0 + − 0.1 zConstruction Silicon epitaxial planar 0.5 + − 0.05 1.2 + − 0.1 1.6 + − 0.1 zFeatures 1) Ultra small mold type. (EMD5) 2) High reliability. 0.22 + − 0.05
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aurix
Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
726-ESD3V3U1U02LRHE6
ESD3V3U1U-02LRH
E6327
aurix
XPOSYS
teaklite
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IEC-61000-4-2
Abstract: No abstract text available
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN zExternal dimensions Unit : mm zApplication Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 zFeatures 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
IEC-61000-4-2
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6.1EN
Abstract: IEC-61000-4-2
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
IEC-61000-4-2
150pF
6.1EN
IEC-61000-4-2
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composition of material used in zener diode
Abstract: IEC-61000-4-2
Text: RSA6.1EN Diodes ESD Protection diode RSA 6.1EN !External dimensions Units : mm !Application Noise suppression on signal line 2.0±0.2 0.9±0.1 1.3±0.1 0.7 0.65 0.65 !Features 1) Small surface mounting type. (UMD5) 2) Multiple diodes with common anode configuration.
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SC-88A
OT-353
composition of material used in zener diode
IEC-61000-4-2
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diode e61
Abstract: ROHM 1SR159-200 ROHM 200V 200mA DIODE 110v zener 10w
Text: ESD Protection diode Silicon Epitaxial Planer RSA6.1EN Characteristic Peak Pulse-1(tp=10X1000µs) Peak Pulse Power-2(tp=8X20µs) DIMENSION (UNIT:mm) Limits 30W Ppk 200W Junction temperature Tj 150˚C Storage temperature Tstg -55~150°C 0.9±0.1 2.0±0.2
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10X1000
11nsec
50nsec
RB159L-400
diode e61
ROHM 1SR159-200
ROHM 200V 200mA DIODE
110v zener 10w
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SOt323 marking code 6X
Abstract: INFINEON diode MARK 22 bat62-02l E6327 Application
Text: BAT62. Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies BAT62 4 BAT62-02L BAT62-02W BAT62-03W 3 BAT62-08S 6 4 3 D 2 D 1 D 1 2 2 1 BAT62-09S 4 5 D 1 1 1 BAT62-07W BAT62-07L4 D 2 6 D 3 1 2 D 2 D 1 D 2 2 4 5 3 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT62.
BAT62
BAT62-02L
BAT62-02W
BAT62-03W
BAT62-07W
BAT62-07L4
BAT62-08S
BAT62-09S
BAT62
SOt323 marking code 6X
INFINEON diode MARK 22
E6327 Application
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DIN 6784
Abstract: No abstract text available
Text: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT17.
BAT17
BAT17-04
BAT17-04W
BAT17-05
BAT17-05W
BAT17-06W
BAT17-07
BAT17
DIN 6784
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sot323 marking code A.C
Abstract: No abstract text available
Text: BAT17. Silicon Schottky Diode • For mixer applications in VHF/UHF range • For high-speed switching application BAT17 BAT17-04 BAT17-04W 3 1 BAT17-05 BAT17-05W 3 2 BAT17-06W 3 D 1 D 2 D 1 1 2 1 BAT17-07 3 D 2 2 4 D 1 D 2 1 2 3 D 1 1 D 2 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT17.
BAT17
BAT17-04
BAT17-04W
BAT17-05
BAT17-05W
BAT17-06W
BAT17-07
BAT17
sot323 marking code A.C
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CM1499-E6DE
Abstract: DFN-12 MO-229C mobile camera dfn
Text: Issue X-1 CM1499-E6DE 6-Channel LCD and Camera EMI Filter Array with ESD Protection Features Product Description • The CM1499-E6DE is a six channel pi-style EMI filter array with ESD protection, which integrates six filters C-R-C in small form factor 0.50mm pitch, DFN package. The CM1499-E6DE has component values of
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CM1499-E6DE
CM1499-E6DE
15pF-100-15pF
110MHz
44Mbps.
MO-229C
12-Lead,
DFN-12
mobile camera dfn
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CM1499-E6DE
Abstract: DFN-12 MO-229C CM1499 DFN-12 MARKING A0
Text: 6-Channel LCD and Camera EMI Filter Array with ESD Protection CM1499-E6DE Features Product Description • The CM1499-E6DE is a 6-channel pi-style EMI filter array with ESD protection that integrates six filters C-R-C into a small form factor 0.50mm pitch, DFN
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CM1499-E6DE
CM1499-E6DE
15pF-100-15pF
110MHz
44Mbps.
DFN-12
MO-229C
CM1499
DFN-12 MARKING A0
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Untitled
Abstract: No abstract text available
Text: 6-Channel LCD and Camera EMI Filter Array with ESD Protection CM1499-E6DE Features Product Description • The CM1499-E6DE is a 6-channel pi-style EMI filter array with ESD protection that integrates six filters C-R-C into a small form factor 0.50mm pitch, DFN
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CM1499-E6DE
CM1499-E6DE
15pF-100
-15pF
110MHz
44Mbps.
DA385<
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diode ESD E6
Abstract: CM1408-06DE CM1408-06 CM1408-E6 MO-229C TDFN-12 cm1408
Text: CM1408-06/E6 6-Channel LCD and Camera EMI Filter Array with ESD Protection Features Applications • • • • • • • • • • Six channels of EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network
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CM1408-06/E6
-25dB
12-lead
MO-229C
12-Lead,
diode ESD E6
CM1408-06DE
CM1408-06
CM1408-E6
TDFN-12
cm1408
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STS 75 SOT23
Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Text: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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Q62702-S612
E6327:
OT-23
STS 75 SOT23
marking BSs sot23
E6327
STS SOT
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TRANSISTOR BSP 149
Abstract: sot 223 marking code BSP SIPMOS Q67000-S071 C 029 Transistor E6327 35GN
Text: BSP 149 SIPMOS Small-Signal Transistor ● VDS 200 V ● ID 0.48 A ● RDS on 3.5 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 149 Q67000-S071 E6327: 1000 pcs/reel
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Q67000-S071
E6327:
OT-223
TRANSISTOR BSP 149
sot 223 marking code BSP
SIPMOS
C 029 Transistor
E6327
35GN
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