diode F4 6A
Abstract: diode F4
Text: GBU 6A . GBU 6M . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 03 Inline bridge Silicon-Bridge Rectifiers >? 4 >? ? >? A >? > >? B >? C
|
Original
|
PDF
|
|
STTH60P03SW
Abstract: STTH60P03 STTH60P03S
Text: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain
|
Original
|
PDF
|
STTH60P03S
O-247
STTH60P03SW
STTH60P03SW
STTH60P03
STTH60P03S
|
stth60p03sw
Abstract: IRM-A20 STTH60P03 STTH60P03S STTH60
Text: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain
|
Original
|
PDF
|
STTH60P03S
O-247
STTH60P03SW
STTH60P03SW
IRM-A20
STTH60P03
STTH60P03S
STTH60
|
stth60p03sw
Abstract: No abstract text available
Text: STTH60P03S ULTRAFAST RECTIFIER PDP ENERGY RECOVERY Table 1: Main Product Characteristics IF AV 60 A A VRRM 300 V A VFP (typ) 2.5 V IRM (typ) 6A Tj 175°C VF (typ) 0.9 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ K A TO-247 STTH60P03SW Ultrafast recovery allowing High Sustain
|
Original
|
PDF
|
STTH60P03S
O-247
STTH60P03SW
STTH60P03SW
|
474F3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
PDF
|
IFS75B12N3E4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
474F3
|
IFS150B12N3T4_B31
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
|
Original
|
PDF
|
IFS150B12N3T4
E1322
FF326DC
FC26E1
2313F
D36134
1231423567896AB
54F36C
4112CD3567896BE
IFS150B12N3T4_B31
|
STW7NC80Z
Abstract: Zener diode 400V 6A
Text: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
|
Original
|
PDF
|
STW7NC80Z
O-247
STW7NC80Z
Zener diode 400V 6A
|
STW7NC90Z
Abstract: No abstract text available
Text: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
|
Original
|
PDF
|
STW7NC90Z
O-247
STW7NC90Z
|
Diode zener 3a
Abstract: STW7NC80Z diode F4 6A
Text: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
|
Original
|
PDF
|
STW7NC80Z
O-247
Diode zener 3a
STW7NC80Z
diode F4 6A
|
LTC4098-3.6
Abstract: A20-LCD15.6 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
|
Original
|
PDF
|
IFS75B12N3E4
428654F4
D3265
ECFC24
B32DC
CD3289
ECFC26
B32DC6
C36B3
1231423567896AB
LTC4098-3.6
A20-LCD15.6
SXA-01GW-P0.6
|
TL 078
Abstract: diode F4 6A STW7NC90Z
Text: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED
|
Original
|
PDF
|
STW7NC90Z
O-247
TL 078
diode F4 6A
STW7NC90Z
|
diode F4 6A
Abstract: 4F36F123
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current
|
Original
|
PDF
|
IFS100B12N3E4
428654F4
D3264
ECFC24
B32DC
D3692C
CD3288
ECFC26
B32DC6
6934F
diode F4 6A
4F36F123
|
IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current
|
Original
|
PDF
|
IFS100B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
BC33694
1231423567896AB
C5363
IFS100B12N3E4B
|
LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense
|
Original
|
PDF
|
IFS75B12N3E4
428654F4
BCFC24
E32DC
BCFC26
E32DC6
6734F
9C46E4
327C53
1231423567896AB
LTC4098-3.6
se666
k3332
edt0145.6
SEH-01T-P0.6
|
|
|
STW7NC80Z
Abstract: No abstract text available
Text: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STW7NC80Z
O-247
STW7NC80Z
|
STW7NC90Z
Abstract: No abstract text available
Text: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
Original
|
PDF
|
STW7NC90Z
O-247
STW7NC90Z
|
STPS40L40CT
Abstract: diode marking H2 STPS40L40CW
Text: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF
|
Original
|
PDF
|
STPS40L40CT/CW
O-220AB
STPS40L40CT
O-247
STPS40L40CW
O-220AB
O-247
STPS40L40CT
diode marking H2
STPS40L40CW
|
STPS40L40CT
Abstract: STPS40L40CW
Text: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF
|
Original
|
PDF
|
STPS40L40CT/CW
O-220AB
STPS40L40CT
O-247
STPS40L40CW
O-220AB
O-247
STPS40L40CT
STPS40L40CW
|
STPS40L40CT
Abstract: STPS40L40CW
Text: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF
|
Original
|
PDF
|
STPS40L40CT/CW
O-220AB
STPS40L40CT
O-247
STPS40L40CW
O-220AB
O-247
STPS40L40CT
STPS40L40CW
|
diode F4 6A
Abstract: No abstract text available
Text: STPS40L40CT/CW LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV A1 K 2 x 20 A A2 VRRM 40 V Tj (max) 150 °C VF (max) 0.49 V FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF
|
Original
|
PDF
|
STPS40L40CT/CW
O-220AB
STPS40L40CT
O-247
STPS40L40CW
diode F4 6A
|
7 band audio spectrum analyzer ic
Abstract: 2SCF2 NJU7305 NJU7505 NJU7505XD NJU7505XM audio connection diagram
Text: NJU7505 PPRELIMINARY BAND PASS FILTER FOR AUDIO SPECTRUM ANALYZER DISPLAY • GENERAL DESCRIPTION The NJU7505 is a band pass filter for audio spectrum analyzer display. It consists of high and low band pass filters, CR oscillation circuit, control circuit and DC transfer circuit.
|
Original
|
PDF
|
NJU7505
NJU7505
NJU7505XD
NJU7305
220pF
7 band audio spectrum analyzer ic
2SCF2
NJU7305
NJU7505XD
NJU7505XM
audio connection diagram
|
Untitled
Abstract: No abstract text available
Text: STK681-360-E Thick Film Hybrid IC Forward/Reverse Motor Driver Application Note http://onsemi.com Overview The STK681-360-E is a hybrid IC for use in PWM current control forward/reverse DC motor driver with brush. Function • Allows forward, reverse, and brake operations in accordance with the external input PWM signal.
|
Original
|
PDF
|
STK681-360-E
STK681-360-E
25ation
|
STW6NA90
Abstract: sd 50 diode
Text: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
|
Original
|
PDF
|
STW6NA90
100oC
O-247
STW6NA90
sd 50 diode
|
UFNF230
Abstract: F-431
Text: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
|
OCR Scan
|
PDF
|
i347clb3
UFNF430
UFNF431
UFNF432
UFNF433
UFNF320
UFNF321
UFNF322
UFNF323
UFNF230
F-431
|
