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    DIODE FOOTPRINTS Search Results

    DIODE FOOTPRINTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE FOOTPRINTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    PDF MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555

    Untitled

    Abstract: No abstract text available
    Text: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD 323/SOT 23 footprints Applications Band switching in VHF-tuners Construction Silicon epitaxial planar


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    PDF MSU277 323/SOT 1-Jan-2006

    MSU277

    Abstract: No abstract text available
    Text: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD-323/SOT-23 footprints Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj=25℃


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    PDF MSU277 OD-323/SOT-23 1-Nov-2006 MSU277

    Untitled

    Abstract: No abstract text available
    Text: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD-323/SOT-23 footprints Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj=25℃


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    PDF MSU277 OD-323/SOT-23 1-Sep-2009

    sod323 reflow

    Abstract: low leakage tvs diode sod323 SD05C-01FTG
    Text: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low


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    PDF SD05C 8/20s IEC61000-4-5) IEC61000-4-2, OD323 IEC61000-4-4, 5/50ns) IEC61000-4-5, sod323 reflow low leakage tvs diode sod323 SD05C-01FTG

    MAD130P

    Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    PDF MMAD1108 De218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MAD130P 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and


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    PDF IEC61000-4-5) IEC61000-4-2, OD323

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low


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    PDF SD05C IEC61000-4-5) IEC61000-4-2, OD323

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and


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    PDF IEC61000-4-5) IEC61000-4-2, OD323

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low


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    PDF SD05C IEC61000-4-5) IEC61000-4-2, OD323

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and


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    PDF IEC61000-4-5) IEC61000-4-2, OD323

    Untitled

    Abstract: No abstract text available
    Text: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SD05C Series SD05C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The bidirectional SD05C TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low


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    PDF SD05C IEC61000-4-5) IEC61000-4-2, OD323

    NTHD4N02F

    Abstract: NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D NTHD4N02F NTHD4N02FT1 NTHD4N02FT1G 5M MARKING CODE SCHOTTKY DIODE

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 1.0 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D

    MCL245

    Abstract: No abstract text available
    Text: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current


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    PDF MCL245 LS-31 200mA 100uA MCL245

    melf diode code

    Abstract: MCL245 MELF Package
    Text: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current


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    PDF MCL245 LS-31 200mA 100uA melf diode code MCL245 MELF Package

    MCL245

    Abstract: No abstract text available
    Text: MCL245 SILICON EPITAXIAL PLANAR DIODE LS-31 Features • Fast switching diode • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage VRM 250 V Mean Rectified Current


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    PDF MCL245 LS-31 200mA 100uA MCL245

    Untitled

    Abstract: No abstract text available
    Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 2.7 A, N−Channel, with 2.2 A Schottky Barrier Diode, ChipFET http://onsemi.com Features • • • • • MOSFET Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals


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    PDF NTHD4N02F NTHD4N02F/D

    sod323 reflow

    Abstract: sd05
    Text: TVS Diode Arrays SPA Devices General Purpose ESD Protection - SD05 Series SD05 Series 450W Discrete Unidirectional TVS Diode RoHS Pb GREEN The SD05 TVS diode is designed to replace multilayer varistors (MLVs) in electronic equipment for low speed and DC applications. It will protect any sensitive equipment


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    PDF 8/20s IEC61000-4-5) IEC61000-4-2, OD323 IEC61000-4-4, 5/50ns) IEC61000-4-5, 8/20s) Appli10 OD323 sod323 reflow sd05

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    marking dp sot363

    Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 marking dp sot363 BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 bf245 equivalent marking code a5 sot363

    2N301

    Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


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    PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N301 BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent