Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6005WDPK
R07DS0901EJ0200
PRSS0004ZE-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6005WDPK
R07DS0901EJ0201
PRSS0004ZE-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A
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RJS6004WDPK
R07DS0897EJ0300
PRSS0004ZE-A
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RJS6004TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6004TDPP-EJ
R07DS0896EJ0300
PRSS0002ZA-A
O-220FP-2L)
RJS6004TDPP-EJ
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RJS6005TDPP-EJ
Abstract: No abstract text available
Text: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A
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RJS6005TDPP-EJ
R07DS0900EJ0300
PRSS0002ZA-A
O-220FP-2L)
RJS6005TDPP-EJ
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Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES
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DSF21035SV
DS4176-1
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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DS4231
Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.
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DSF21060SV
DDS4231-2
DS4231-3
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DS4231
DSF21060SV
DSF21060SV55
DSF21060SV56
DSF21060SV57
DSF21060SV58
DSF21060SV59
DSF21060SV60
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AN4506
Abstract: DSF21035SV DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs APPLICATIONS • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-1
DS4176-2
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
AN4506
DSF21035SV
DSF21035SV30
DSF21035SV32
DSF21035SV34
DSF21035SV35
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DS4231
Abstract: No abstract text available
Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces January 2000 version, issue DS4231-3.0 DS4231-4.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters.
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DSF21060SV
DS4231-3
DS4231-4
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DS4231
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DSF21035SV
Abstract: DSF21035SV30 DSF21035SV32 DSF21035SV34 DSF21035SV35
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces March 1998 version, DS4176-1.4 DS4176-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-1
DS4176-2
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
DSF21035SV
DSF21035SV30
DSF21035SV32
DSF21035SV34
DSF21035SV35
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DS4231
Abstract: DDS4231-2 DSF21060SV DSF21060SV55 DSF21060SV56 DSF21060SV57 DSF21060SV58 DSF21060SV59 DSF21060SV60
Text: DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 1690A IFSM 16000A Qr 1200µC trr 6.5µs APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.
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DSF21060SV
DDS4231-2
DS4231-3
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DS4231
DSF21060SV
DSF21060SV55
DSF21060SV56
DSF21060SV57
DSF21060SV58
DSF21060SV59
DSF21060SV60
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Untitled
Abstract: No abstract text available
Text: DSF21035SV DSF21035SV Fast Recovery Diode Advance Information Replaces January 2000 version, DS4176-2.0 DS4176-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode ■ Antiparallel Diode ■ Inverters
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DSF21035SV
DS4176-2
DS4176-3
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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1000A 100V power diode
Abstract: No abstract text available
Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces January 2000 version, DS4218-4.0 DS4219-5.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode
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DSF20060SF
DS4218-4
DS4219-5
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
1000A 100V power diode
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A 7800A
Abstract: DSF20060SF DSF20060SF55 DSF20060SF56 DSF20060SF58 DSF20060SF60
Text: DSF20060SF DSF20060SF Fast Recovery Diode Replaces March 1997 version, DS4218-3.4 DS4219-4.0 January 2000 KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs APPLICATIONS • Inverters ■ Choppers ■ Inverse Parallel Diode ■ Freewheel Diode
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DSF20060SF
DS4218-3
DS4219-4
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
A 7800A
DSF20060SF
DSF20060SF55
DSF20060SF56
DSF20060SF58
DSF20060SF60
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1N4148 JANTX microsemi
Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Text: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching
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1N4148UB
MIL-PRF-19500/116
1N4148UB
MIL-PRF-19500/116.
1N4148
T4-LDS-0281-2,
1N4148 JANTX microsemi
1N4148 JANTX
1N4148 JANTXV
1n4148 general diode
microsemi 1n4148
EIA-418D
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1N4148 JANTX microsemi
Abstract: 1N4148 JANTXV MELF Package EIA-418D
Text: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with
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1N4148UBC
MIL-PRF-19500/116
1N4148UBC
MIL-PRF-19500/116.
1N4148
T4-LDS-0281-4,
1N4148 JANTX microsemi
1N4148 JANTXV
MELF Package
EIA-418D
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marking SA
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M
SBS006.
SBS806M]
marking SA
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)
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ENN7029
SBS806M
SBS806M]
SBS806M
SBS006.
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diode
Abstract: No abstract text available
Text: Diode arrays Diode arrays are available in both leaded and surface mount packages. The diode array data sheets are arranged in the following order in this chapter: • surface mount diode arrays • leaded diode arrays The diode arrays are available in the following packages:
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SC-59,
OT-23)
OT-323)
diode
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LIC AGENTS DATA
Abstract: No abstract text available
Text: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
LIC AGENTS DATA
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Untitled
Abstract: No abstract text available
Text: HL1566AF 1.55 jam Laser Diode with EA Modulator HITACHI Description The HL1566AF is a 1.55 |_im InGaAsP distributed-feedback laser diode DFB-LD with a multi-quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is
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HL1566AF
HL1566AF
HL1566AFndicular)
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BAV74
Abstract: DIN 3015
Text: BAV74 Silicon planar twin-diode The silicon planar tw in -d io d e BAV 74 in the minature plastic case 23 A 3 DIN 41869 S O T -23 is suitable fo r use as high-speed s w itch in g diode in film circuits. The diode is coded JA. The stated data apply fo r any diode system, unless otherw ise
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BAV74
OT-23)
Q62702-A
Utt05
03S1-
Tota12
BAV74
DIN 3015
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Untitled
Abstract: No abstract text available
Text: M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 D S 4 1 7 6 -1 .4 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 3500V 3000A Jf AV
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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