k540
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT544A-xxA Series Document No. : HUW0825015-01A Date of issue : Nov. 21 2008 Preliminary Preliminary Specification of 1.5 m Tunable Laser Diode Module SLT544A-xxA Series RoHS Compliant Sumitomo Electric Industries, Ltd.
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SLT544A-xxA
HUW0825015-01A
100GHz
HUW0825015-01A
k540
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thermistor k275
Abstract: J955 k365 IC K520 K615 k620 k275 k245 transistor F370 k355
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xA Series Document No. : HUW0025006-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 10mW ~ SLT548x-xA Series
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SLT548x-xA
HUW0025006-01C
50GHz
IRO-D01002
July/26/2001
thermistor k275
J955
k365
IC K520
K615
k620
k275
k245
transistor F370
k355
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k540
Abstract: tunable laser diode slt5446 Diode k420
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT5446-xxA Series Document No. : HUW0425035-01A Date of issue : Jan. 10th, 2005 Preliminary Technical Specification of 1.5µm Tunable Laser Diode Module SLT5446-xxA Series Sumitomo Electric Industries, Ltd. 1/8
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SLT5446-xxA
HUW0425035-01A
100GHz
k540
tunable laser diode
slt5446
Diode k420
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thermistor k275
Abstract: k355 k185 J955 k535 J780 J945 J965 K195 k540
Text: Sumitomo Electric Industries, Ltd. Part No. : SLT548x-xB Series Document No. : HUW0025007-01C Date of issue : January 31, 2002 Technical Specification of 1.5µm Tunable Laser Diode Module for WDM External Modulation ~ 8 Channels , 20mW ~ SLT548x-xB Series
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SLT548x-xB
HUW0025007-01C
50GHz
IRO-D01002
July/2/2001
thermistor k275
k355
k185
J955
k535
J780
J945
J965
K195
k540
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V23990-K420-A60-PM
Abstract: No abstract text available
Text: V23990-K420-A60-PM target datasheet MiniSKiiP 3 PIM 1200V/100A Features MiniSKiiP® 3 housing ● Solderless interconnection ● Mitsubishi Generation 6.1 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A60-PM Maximum Ratings
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V23990-K420-A60-PM
200V/100A
V23990-K420-A60-PM
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V23990-K420-A40-PM
Abstract: No abstract text available
Text: V23990-K420-A40-PM MiniSKiiP 3 PIM 1200V/100A MiniSKiiP® 3 housing Features ● Solderless interconnection ● Trench Fieldstop IGBT4 technology Target Applications Schematic ● Industrial Motor Drives Types ● V23990-K420-A40-PM Maximum Ratings Tj=25°C, unless otherwise specified
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V23990-K420-A40-PM
200V/100A
V23990-K420-A40-PM
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k4202
Abstract: 2SK4202 nec k4202 d1922 2SK4202-S19-AY D19229EJ1V0DS
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
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2SK4202
2SK4202
2SK4202-S19-AY
O-220
k4202
nec k4202
d1922
2SK4202-S19-AY
D19229EJ1V0DS
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K4201
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
K4201
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2SK4201
Abstract: 2SK4201-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 13 mΩ MAX. (VGS = 10 V, ID = 40 A)
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2SK4201
2SK4201
2SK4201-S19-AY
O-220
2SK4201-S19
2SK42
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2sk4202
Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS on = 7.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
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2SK4202
2SK4202
2SK4202-S19-AY
O-220
nec k4202
k4202
2sk420
d1922
2SK4202-S19-AY
NEC TRANSISTOR MARKING CODE
2SK4202-S19
2SK42
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2SK4201
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK4201
Abstract: 2SK4201-S19
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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k4202
Abstract: 2sk4202 nec k4202 2SK4202-S19-AY K4-20
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Keithley
Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
Text: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor
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A1516
Abstract: 2SK4209 A-1516 2SK42 k420
Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
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2SK4209
ENA1516
PW10s,
A1516-5/5
A1516
2SK4209
A-1516
2SK42
k420
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A1289
Abstract: A-1289 A1289-5 2SK42 2SK4203LS 2SK4203 K4203
Text: 2SK4203LS Ordering number : ENA1289 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4203LS General-Purpose Switching Device Applications Features • • 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C
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2SK4203LS
ENA1289
PW10s,
A1289-5/5
A1289
A-1289
A1289-5
2SK42
2SK4203LS
2SK4203
K4203
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK4209 Ordering number : ENA1516 SANYO Semiconductors DATA SHEET 2SK4209 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.
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2SK4209
ENA1516
A1516-5/5
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2SK4200
Abstract: K4200 2SK4200LS A13333 A13334 2SK42 A13331 ENA1333
Text: 2SK4200LS Ordering number : ENA1333 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4200LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.
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2SK4200LS
ENA1333
A1333-5/5
2SK4200
K4200
2SK4200LS
A13333
A13334
2SK42
A13331
ENA1333
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K4208
Abstract: 2SK4208 2SK420 2SK42
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package Gate-source surrender voltage VGSS : ±30 V guaranteed Avalanche energy capability guaranteed: EAS > 801 mJ
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2002/95/EC)
2SK4208
O-220D-A1
K4208
2SK4208
2SK420
2SK42
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K4208
Abstract: 2sk4208 2SK420
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package Gate-source surrender voltage VGSS : ±30 V guaranteed Avalanche energy capability guaranteed: EAS > 801 mJ
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2002/95/EC)
2SK4208
O-220D-A1
K4208
2sk4208
2SK420
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PDF
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K4208
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package Gate-source surrender voltage VGSS : ±30 V guaranteed Avalanche energy capability guaranteed: EAS > 801 mJ
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2002/95/EC)
2SK4208
O-220D-A1
K4208
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PDF
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K4207
Abstract: No abstract text available
Text: 2SK4207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK4207 Swiching Regulator Applications Unit: mm 1.0 2.0 4.5 Ф3.2±0.2 15.9max. z Low drain−source ON-resistance: RDS (ON) = 0.78Ω (typ.) Absolute Maximum Ratings (Ta = 25°C)
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2SK4207
K4207
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general microwave F9120
Abstract: DM864B APC UPS es 500 CIRCUIT DIAGRAM 75W HI FI AMPLIFIER DM189CH schematic diagram APC UPS systems DM186CH General Microwave M871, Opt. 4 f9114 APC Back ES 500 UPS circuit diagram
Text: ^ *L S HwH' 991 GENERAL MICROWAVE lir a GENERAL MICROWAVE GENERAL MICROWAVE COMPONENTS & INSTRUMENTS INFORMATION . Ordering Information 1. Please order by m odel num ber, op tio n num ber where ap plicable , and p ro d u c t name. Telephone orders for standard catalog products will be ac
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S-162
17--Tlx:
general microwave F9120
DM864B
APC UPS es 500 CIRCUIT DIAGRAM
75W HI FI AMPLIFIER
DM189CH
schematic diagram APC UPS systems
DM186CH
General Microwave M871, Opt. 4
f9114
APC Back ES 500 UPS circuit diagram
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