SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
schottky diode 60V 5A
30A high speed diode
Schottky Diode 20V 5A
Schottky diode high reverse voltage
marking code 1A diode
Schottky Diode 40V 2A
Schottky Barrier 3A
diode schottky code 10
SCHOTTKY BARRIER DIODE
ERG81-004
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1001C- □ Description The KPS1001C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1001C-
KPS1001C
21-JAN-11
KSD-XXXXXX-000
KPS1001C-T
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1004C- □ Description The KPS1004C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1004C-
KPS1004C
21-JAN-11
KSD-XXXXXX-000
KPS1004C-T
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KPS1005C-T
Abstract: KPS1005C-
Text: Paper Sensor KPS1005C- □ Description The KPS1005C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1005C-
KPS1005C
21-JAN-11
KSD-XXXXXX-000
KPS1005C-T
KPS1005C-T
KPS1005C-
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1002C- □ Description The KPS1002C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1002C-
KPS1002C
21-JAN-11
KSD-XXXXXX-000
KPS1002C-T
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1003C- □ Description The KPS1003C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation
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KPS1003C-
KPS1003C
21-JAN-11
KSD-XXXXXX-000
KPS1003C-T
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LTC4098-3.6
Abstract: No abstract text available
Text: 5 KP6,5.5 KP110CA power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter - @ 6 , / Absolute Maximum Ratings Symbol Conditions Axial lead diode
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KP110CA
KP110CA
LTC4098-3.6
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paper sensor
Abstract: Kodenshi light emitting and detecting sensor KPS1008C 1235mA
Text: Paper Sensor KPS1008C The KPS1008C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1008C
KPS1008C
paper sensor
Kodenshi
light emitting and detecting sensor
1235mA
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KPS-100
Abstract: paper sensor KPS1006C
Text: Paper Sensor KPS1006C The KPS1006C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1006C
KPS1006C
KPS-100
paper sensor
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1007C Description The KPS1007C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1007C
KPS1007C
21-JAN-11
KSD-XXXXXX-000
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1008C Description The KPS1008C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1008C
KPS1008C
21-JAN-11
KSD-XXXXXX-000
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Untitled
Abstract: No abstract text available
Text: Paper Sensor KPS1006C Description The KPS1006C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1006C
KPS1006C
21-JAN-11
KSD-XXXXXX-000
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paper sensor
Abstract: KPS-100 KPS1003C photo switch lds sensor
Text: Paper Sensor KPS1003C The KPS1003C photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC in which a photo diode, signal processing circuit, constant voltage circuit and modulation circuit are integrated at the light receiving side.
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KPS1003C
KPS1003C
paper sensor
KPS-100
photo switch
lds sensor
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Untitled
Abstract: No abstract text available
Text: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light
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S10108,
S10109
S10108
S10109
S10108:
S10109)
B1201,
KPIC1066E02
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GP 836 DIODE
Abstract: HP 3379 gp 728 diode marking 3507 diode marking 3fv DIODE 3FV 60 DIODE y 12 9p marking KDZ3.6FV 3fv 60
Text: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES ・Small Package : TFSC ・Nominal Voltage Tolerance About ±6%. MAXIMUM RATING Ta=25℃
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KDZ36FV
KDZ10FV
KDZ11FV
KDZ12FV
KDZ13FV
KDZ15FV
KDZ16FV
KDZ18FV
KDV36VV
GP 836 DIODE
HP 3379
gp 728 diode
marking 3507 diode
marking 3fv
DIODE 3FV 60
DIODE y 12
9p marking
KDZ3.6FV
3fv 60
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P781
Abstract: P7816 DATASHEET OF IC 741 photo diode photoreflector KPCA0007EA KPCB0016EB KPCB0018EA KPCB0019EA KPCB0020EA
Text: PHOTOREFLECTOR Photoreflector P7816 Thin package, photo IC diode output type photoreflector P7816 is a photoreflector using a photo IC diode on the output. The photo IC diode consists of a photodiode integrated with a current amplifier, and linearly amplifies and outputs the photocurrent generated in the photodiode. The two lead, current output allows operation just the same as
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P7816
P7816
SE-171
KPC1005E01
P781
DATASHEET OF IC 741
photo diode
photoreflector
KPCA0007EA
KPCB0016EB
KPCB0018EA
KPCB0019EA
KPCB0020EA
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE PD100GB/KP100GB_ UL;E76102 M Power Diode Module DD1 OOGB series are designed for various rectifier circuits. DD 1 OOGB has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800 V
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PD100GB/KP100GB_
E76102
DD100GB-40
DDIOOGB-80
B-106
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NEC SCR
Abstract: NDL3210S 7668 L3210S
Text: DATA SHEET VISIBLE LASER DIODE NDL3210S 4 mW, 670 nm SMALL PKG BAR CODE READER, POINTER APPLICATION AIGalnP DOUBLE HETEROSTRUCTURE VISIBLE LASER DIODE DESCRIPTION NDL3210S is a small package 05.6 mm AIGalnP 670 nm visible laser diode and especially developed for Bar
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NDL3210S
NDL3210S
IEI-1209)
NEC SCR
7668
L3210S
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20B3 diode
Abstract: thermistor 1812
Text: LB5374 Laser Diode Module Description The LB5374 is a single longitudinal mode laser diode module. Features 1.3 |im DFB laser diode • High speed modulation up to 2.5Gb/s • Built-in 30dB optical isolator • Internal monitor photodiode, thermistor and thermo-electric cooler
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LB5374
LB5374
14-pin
1180nH
20B3 diode
thermistor 1812
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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thyristor BBC
Abstract: thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor
Text: BBC BROWN BOVERI Breakover Diode BOD 1 -0 4 BOD 1-42 R Druckschrift/Publication No. C H -E 3.40515.1 D/E/F Ausgabe/Edition September/Septembre 1985 VBo ' 400.4200 V Kippdiode: BOD Breakover Diode: BOD Diode de retournement: BOD M erkm ale Features Particularités
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CH-5401
D-6800
D-6840
thyristor BBC
thyristor BBC CS 0,6
thyristor BBC CS
BROWN BOVERI protection
kippdiode
bbc cs 23 thyristor
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Untitled
Abstract: No abstract text available
Text: SONY SLD322XT 0.5W High Power Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achived by QW-SCH structure*2.
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SLD322XT
SLD300
SS-00259,
SLD322XT
SS00259
net/Sonylnfo/procurementinfo/ss00259/
M-273
LO-10)
M-273
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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