Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE L4 54 Search Results

    DIODE L4 54 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE L4 54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOD-110

    Abstract: BAT254 smd schottky diode marking 72 Diode smd code 805 MCC SMD DIODE SMD MARKING 541 DIODE str f 6707 MAR 733
    Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 handbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION


    Original
    PDF M3D177 BAT254 OD110 MAM214 SCDS48 117021/1100/01/pp8 SOD-110 BAT254 smd schottky diode marking 72 Diode smd code 805 MCC SMD DIODE SMD MARKING 541 DIODE str f 6707 MAR 733

    str 6707

    Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
    Text: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic


    Original
    PDF M3D177 BAT254 BAT254 OD110 MAM214 OD110) SCDS48 117021/1100/01/pp8 str 6707 BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72

    BDX54B

    Abstract: BDX54b equivalent BDX53A BDX53B BDX53C BDX54C
    Text: BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATIONS ■ AUDIO AMPLIFIERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 3 TO-220 DESCRIPTION


    Original
    PDF BDX53A/53B/53C BDX54B/54C BDX53B, BDX53C, BDX54B BDX54C O-220 BDX53A, BDX53B BDX53C BDX54b equivalent BDX53A BDX54C

    Untitled

    Abstract: No abstract text available
    Text: Green Product STU/D20L01 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 54 @ VGS=10V


    Original
    PDF STU/D20L01 O-252 O-251 252AA( O-252

    agilent pHEMT transistor

    Abstract: pHEMT transistor atf541m4 ATF pHEMT ATF-541M4 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K knife edge isolation schematic diagram ac power regulator
    Text: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1279 Introduction Agilent Technologies’ ATF-541M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in


    Original
    PDF ATF-541M4 ATF-55143 ATF-541xx agilent pHEMT transistor pHEMT transistor atf541m4 ATF pHEMT ATF-541M4 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K knife edge isolation schematic diagram ac power regulator

    depletion mode

    Abstract: ATF541M4 AN1279 2907A similar ATF-541M4 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K 1279 transistor
    Text: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using ATF-541M4 Enhancement Mode PHEMT Application Note 1279 Introduction Avago Technologies’ ATF-541M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz


    Original
    PDF ATF-541M4 5988-5520EN depletion mode ATF541M4 AN1279 2907A similar ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K 1279 transistor

    spice model three phase TRANSFORMER

    Abstract: three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice
    Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: [email protected] INTRODUCTION


    Original
    PDF AN1679/D BP1112 r14525 spice model three phase TRANSFORMER three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice

    spice model three phase TRANSFORMER

    Abstract: AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148
    Text: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: [email protected] INTRODUCTION


    Original
    PDF AN1679/D BP1112 r14525 spice model three phase TRANSFORMER AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148

    C 12 PH Zener diode

    Abstract: MC3479-D 100-20 diode MC3479 stepper motor zener motorola MC3479 equivalent MC3479 5 volts ZENER DIODE MC14049uB data only Nippon Pulse Motor
    Text: Order this document by MC3479/D MC3479 Stepper Motor Driver The MC3479 is designed to drive a two–phase stepper motor in the bipolar mode. The circuit consists of four input sections, a logic decoding/sequencing section, two driver–stages for the motor coils, and an


    Original
    PDF MC3479/D MC3479 MC3479 C 12 PH Zener diode MC3479-D 100-20 diode MC3479 stepper motor zener motorola MC3479 equivalent 5 volts ZENER DIODE MC14049uB data only Nippon Pulse Motor

    ATF-54143

    Abstract: ATF54143 GRM188R71H103KA01D LL1608-FH2N7S LL1608-FH5N6K ATF at 2.4 Ghz
    Text: ATF-54143 High Intercept Low Noise Amplifier for the 1850– 1910 MHz PCS Band using the Enhancement Mode PHEMT Application Note 1222 Introduction Avago Technologies’ ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6


    Original
    PDF ATF-54143 ATF-54143 ATF-55143 5988-4290EN 5989-2273EN ATF54143 GRM188R71H103KA01D LL1608-FH2N7S LL1608-FH5N6K ATF at 2.4 Ghz

    5988-2336en

    Abstract: ATF-54143 2N2907 ATF-55143 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K LNAS11
    Text: High Intercept Low Noise Amplifier for the 1850 – 1910 MHz PCS Band using the Agilent ATF-54143 Enhancement Mode PHEMT Application Note 1222 Introduction Agilent Technologies’ ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in


    Original
    PDF ATF-54143 ATF-55143 5988-2336EN 5988-2336en ATF-54143 2N2907 LL1608-F2N7S LL1608-FH2N7S LL1608-FH5N6K LNAS11

    GRM42-6X7R104K50

    Abstract: EXCELDRC35C transmission line GRM42-6C BZX284C5V1 GRM42-6C0G102J50 EEVHB1V100P 4.7 B2 zener B2 Zener zener 1206 5.1 v
    Text: DB-54003L-175 BOM Component ID Description Manufacturer Part Code B1 Ferrite Bead Value Case size PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 120 pF 1206 MURATA GRM42-6C0G121J50 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102J50


    Original
    PDF DB-54003L-175 EXCELDRC35C GRM42-6C0G121J50 GRM42-6C0G102J50 GRM42-6X7R104K50 EEVHB1V100P GRM42-6C0G221J50 1812SMS-33 1812SMS-22 GRM42-6X7R104K50 EXCELDRC35C transmission line GRM42-6C BZX284C5V1 GRM42-6C0G102J50 EEVHB1V100P 4.7 B2 zener B2 Zener zener 1206 5.1 v

    MC3479

    Abstract: MC3479-D MC3479 equivalent 1N5221A MC14049UB MC3479P analog bipolar DRIVER coil ic LM 350 equivalent
    Text: Order this document by MC3479/D MC3479 Stepper Motor Driver The MC3479 is designed to drive a two–phase stepper motor in the bipolar mode. The circuit consists of four input sections, a logic decoding/sequencing section, two driver–stages for the motor coils, and an


    Original
    PDF MC3479/D MC3479 MC3479 MC3479/D* MC3479-D MC3479 equivalent 1N5221A MC14049UB MC3479P analog bipolar DRIVER coil ic LM 350 equivalent

    marking l4 sot-23

    Abstract: BAT54 l44 SOT23 DIODE marking CODE AV BAT54 BAT54A BAT54C BAT54S l4 marking code diode
    Text: Certificate TH97/10561QM BAT54/54A/54C/54S Certificate TW00/17276EM SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL SOT-23 PRV : 30 Volts Io : 200 mA 0.100 0.013 1.40 0.95 0.50 0.35 FEATURES : 3.10 2.70 0.19 0.08 * These diodes feature very low turn-on voltage


    Original
    PDF TH97/10561QM BAT54/54A/54C/54S TW00/17276EM OT-23 OT-23 BAT54 BAT54A BAT54C BAT54S BAT54 marking l4 sot-23 BAT54 l44 SOT23 DIODE marking CODE AV l4 marking code diode

    capacitor

    Abstract: capacitor 120 pF 142-0701-801 GRM42-6C0G121J50 capacitor 120 nF GRM42 l 0701 3214W-1-103E BZX284C5V1 EEVHB1V100P
    Text: DB-54008L-470 BOM Component ID Description Value Case size Manufacturer Part Code C4 Capacitor 10 nF 1206 Murata GRM42-6X7R104K50 C3 Capacitor 1 nF 1206 Murata GRM42-6C0G102J50 C1 Capacitor 120 pF 1206 Murata GRM42-6C0G121J50 C2 Capacitor 120 pF 1206 Murata


    Original
    PDF DB-54008L-470 GRM42-6X7R104K50 GRM42-6C0G102J50 GRM42-6C0G121J50 120pF OD110 BZX284C5V1 PD54008L capacitor capacitor 120 pF 142-0701-801 GRM42-6C0G121J50 capacitor 120 nF GRM42 l 0701 3214W-1-103E BZX284C5V1 EEVHB1V100P

    PPAP

    Abstract: 4810N
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original
    PDF NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N

    Untitled

    Abstract: No abstract text available
    Text: NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4810N


    Original
    PDF NTD4810N, NVD4810N NTD4810N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4810N NTD4810N/D

    SSU50N10

    Abstract: MosFET
    Text: SSU50N10 54A , 100V , RDS ON 22mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-263 The SSU50N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original
    PDF SSU50N10 O-263 SSU50N10 50N10 9-Dec-2011 MosFET

    IRF630

    Abstract: IRF630FP
    Text: IRF630 IRF630FP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630 200 V < 0.40 Ω 9A IRF630FP 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES


    Original
    PDF IRF630 IRF630FP O-220/TO-220FP O-220 O-220FP IRF630 IRF630FP

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original
    PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D

    4906ng

    Abstract: 06ng 49 06ng NTD4906NT4G 4906n 48 06ng NTD4906NT4H NTD4906N 369D mosfet 06ng
    Text: NTD4906N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original
    PDF NTD4906N NTD4906N/D 4906ng 06ng 49 06ng NTD4906NT4G 4906n 48 06ng NTD4906NT4H NTD4906N 369D mosfet 06ng

    Untitled

    Abstract: No abstract text available
    Text: S3 National m M Semiconductor 54AC/74AC14 Hex Inverter with Schmitt Trigger Input General Description The 'AC14 co ntains six inverter gates each with a Schm itt trigger input. The 'AC 14 co ntains six logic inverters w hich accept standard C M OS input signals and provide standard


    OCR Scan
    PDF 54AC/74AC14 125-C

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON MDO^miera «! BDX53A/53B/53C BDX54B/54C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . BDX53B, BDX53C, BDX54B AND BDX54C ARE SGS-THOMSON PREFERRED SALESTYPES APPLICATIONS . AUDIO AMPLIFIERS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION


    OCR Scan
    PDF BDX53A/53B/53C BDX54B/54C BDX53B, BDX53C, BDX54B BDX54C BDX53A, BDX53B BDX53C T0-220