905 nm Infrared Emitting Diode
Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Text: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply
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7040 TTL
Abstract: LS588 905 nm Infrared Emitting Diode
Text: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger
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LT3682EDD datasheet
Abstract: LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208
Text: LT3682 1A Micropower Step-Down Switching Regulator FEATURES DESCRIPTION n The LT 3682 is an adjustable frequency 250kHz to 2.2MHz monolithic buck switching regulator that accepts input voltages up to 36V. A high efficiency 0.5Ω switch is included on the device along with a boost diode and the
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LT3682
250kHz
QFN24
TSSOP16E
LT3684
850mA,
DFN10
MSOP10E
LT3685
LT3682EDD datasheet
LT3682EDD#PBF
MARKING TRANSISTOR BD RC
B150
LQH55D
LT3682
eef 1208
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diode lt 205
Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
Text: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN
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CMLM2205
OT-563
CMLM0205
CMLM0705
150mA,
diode lt 205
CMLM0705
CMLM2205
diode marking 53
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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LT 8233
Abstract: diode LT 8233 4CM6 U891 L486 D029 U615
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00001t3
9305-F-078
lead-171
LT 8233
diode LT 8233
4CM6
U891
L486
D029
U615
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Untitled
Abstract: No abstract text available
Text: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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00Q01t
9305-F-078
DO-35
DO-41
DO-15
DO-201AD
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BZY95C12
Abstract: in152 BZY95-C12 BZY95-C51 BZY95C22 BZY96C5V1 BZY96C6V2 BZY96-C6V8 BZY95-C24 BZY95C24
Text: SEMITRON INDUSTRIES LT» 43E D • &137 &&^ OOOOISI O B S L C B BZY9S/BZY96/Z2 SERIES Hermetically Sealed Metal Package ■Voltage Regulator Diode Released to BS/CECC 9305-F082 ■Voltage Range 3.0 to 400 Volts 1.5 Watt Steady State ■400 Watt Peak Power
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BZY9S/BZY96/Z2
9305-F082
9305-F-082
DO-35
DO-35
DO-41
DO-15
DO-201AD
BZY95C12
in152
BZY95-C12
BZY95-C51
BZY95C22
BZY96C5V1
BZY96C6V2
BZY96-C6V8
BZY95-C24
BZY95C24
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D0201AD
Abstract: No abstract text available
Text: ¡LITE-ON INC ra ijj L 31E D 5531^7 0ÜG1ÔS4 *4 I LT N GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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S53b3k
T-13/4
LTE-2871/2871C
LTE-2871
D0-41and
D0-41L
201AD
553b3b7
D0201AD
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JU003
Abstract: No abstract text available
Text: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls
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ETK81-O5O
Ic680
JU003
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ITB68
Abstract: No abstract text available
Text: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS
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9305-F-080
DO-35
DO-41
DO-15
DO-201AD
ITB68
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transistor bel 100
Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Text: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31
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6DI5OZ-12O
eST05835%
195t/R89)
transistor bel 100
transistor f151
B-429
30S3
F151
M606
transistor BC 2500
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2DI5OZ-12O
Abstract: B381 IB07
Text: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching
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2DI5OZ-12O
E82988
l95t/R89
Shl50
B381
IB07
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IN4745
Abstract: in4749 in4728
Text: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping
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IN4728
DO-41
DO-41,
IL-STD-202
IN4764
IN4745
in4749
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MRD500
Abstract: motorola MRD500 MRD510 laser diode RW
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le
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MRD500
MRD510
RD500)
MRD510)
MRD500
motorola MRD500
MRD510
laser diode RW
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H23L1
Abstract: EI114
Text: G E SOLI» STATE 01 Optoelectronic Specifications. DE J 3fl?SDfll □ □ l c]flD4 D | Ì ^ H ì- K Matched Emitter-Detector Pair H23L1 SYM A B Bi ÿb bi O E El e ei G L Lt R 5 T T he G E Solid State H 23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a
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H23L1
H23L1
270fl
EI114
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ERD29
Abstract: F553 T151 T460 T810
Text: ERD29 2 .5A M B N 'iS : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current High voltage by mesa design, Ä 7 - 3 - K :« C o lo r c o d e : G re e n • f if f K H i High reliability .t y p e nam e V o lt a g e c la s s A D r ia g e a
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ERD29
l95t/R89
F553
T151
T460
T810
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LT 5224 diode
Abstract: IN5222 IN5229 LT 5224 zener diode in 5229 b
Text: 1N5221 thru Microjsemi Corp. f The diode experts / SANTA ANA, CA / / SCOTTSDALE, AZ 1N5281 DO-35 F o r m ore in fo rm ation call: 6 0 2 9 4 I-6 3 0 0 SILIC O N 500 mW ZEN ER D IO D E S FEATU R ES • 2.4 THRU 200 V OLTS • COM PACT PAC KAGE • CO N SU LT FA C TO R Y FOR V OLTAGES ABO VE 200 V
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1N5221
1N5281
DO-35
1N5221
1N5242A,
1N5243A,
1N5281A,
LT 5224 diode
IN5222
IN5229
LT 5224
zener diode in 5229 b
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LT 5247
Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Text: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V
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DO-35
1N5221A,
1N5242A,
1N5243A,
1N5281A,
1N5221
1N5281
LT 5247
5253-1N
LT 5247 H
LT 5224 diode
LT 5245
IN5242
IC 5276
in5250
LT 5249
LT 5252
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in4742a
Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Text: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V
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LTE2871
Abstract: D0-201AD LTE-2871
Text: ¡LITE-ON INC L r a ijj 31E D 5531^7 0ÜG1ÔS4 *4 ILTN GaAs T-13/4 MODIFIED 1 ' LEA 50 INFRARED EMITTING DIODE LT E-2871/2871C FEATU RES • S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y . • LOW COST. • N A R R O W B EA M .
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T-13/4
LTE-2871/2871C
LTE-2871
553b3b7
D0201AD
LTE2871
D0-201AD
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t333b
Abstract: ks52
Text: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax
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KS52450310
T-33-35
S52450310
S52450310
t333b
ks52
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ufnd110
Abstract: T3535
Text: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled
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Gia717
UFND110
UFND113
T3535
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere
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GEPS2001
GEPS2001
H51868
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