Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R
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BAV99
BAV99L-AE3-R
BAV99G-AE3-R
BAV99L-AL3-R
BAV99G-AL3-R
BAV99L-AN3-R
BAV99G-AN3-R
BAV99L-AL6-R
BAV99G-AL6-R
OT-23
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LTspice
Abstract: Acbel schematic diagram switching power supply NTC 15K LT8582 LT3786 XAL6060-472ML High Current Battery Charger adapter battery hp 19V Sanyo supercapacitors LTC3115-1
Text: April 2012 I N T H I S I S S U E 2.5MHz, dual monolithic supply with integrated 3A power switches 12 digital power manager sequences any number of supplies 28 dual monolithic ideal diode extends battery life 34 supercapacitor-based power supply backup 36 µModule DC/DC converter
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com/554
LTM8052
SW-COC-001530
LTspice
Acbel schematic diagram switching power supply
NTC 15K
LT8582
LT3786
XAL6060-472ML
High Current Battery Charger
adapter battery hp 19V
Sanyo supercapacitors
LTC3115-1
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construction of varactor diode
Abstract: No abstract text available
Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12147
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200ms
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1220MHz
construction of varactor diode
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mc12149
Abstract: No abstract text available
Text: Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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200ms
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MA393
Abstract: MC12147 MC12147D MC12149 MC12202 motorola varactor
Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12147/D
MC12147
MC12147
MC12202
MA393
MC12147D
MC12149
motorola varactor
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ML12149-5P
Abstract: LANSDALE SEMICONDUCTOR MA393 MC12149 MC12149D ML12149 ML12210 so8 Wire bond
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
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ML12149
MC12149
ML12149
ML12210
ML12149-5P
LANSDALE SEMICONDUCTOR
MA393
MC12149
MC12149D
so8 Wire bond
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MA393
Abstract: MC12147 MC12147D MC12149 MC12202
Text: MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12147
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MC12147/D
MA393
MC12147D
MC12149
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construction of varactor diode
Abstract: MA393 varactor diode high frequency MC12147 MC12147D MC12202
Text: Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12147/D
MC12147
MC12147
MC12202
construction of varactor diode
MA393
varactor diode high frequency
MC12147D
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Untitled
Abstract: No abstract text available
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
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ML12210
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Untitled
Abstract: No abstract text available
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
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ML12149-5P
Abstract: ML12210 MA393 MC12149 MC12149D ML12149 LT 725
Text: ML12149 Low Power Voltage Controlled Oscillator Buffer Legacy Device: Motorola MC12149 The ML12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO
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MC12149
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ML12210
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MA393
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MC12149D
LT 725
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using
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MC12149
1300MHz.
MC12202
MC12149/D*
MC12149/D
DL140
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MC12149
Abstract: MA393 MC12149D MC12202
Text: Order this document by MC12149/D Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an
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MC12202
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MC12149D
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construction of varactor diode
Abstract: varactor diode high frequency MA393 MC12147 MC12147D MC12202
Text: Freescale Semiconductor, Inc.Order this document by MC12147/D MC12147 Low Power Voltage Controlled Oscillator Buffer LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA DEVICE TO BE PHASED OUT. ARCHIVE INFORMATION Freescale Semiconductor, Inc.
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MC12147
MC12202
construction of varactor diode
varactor diode high frequency
MA393
MC12147D
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MMBV3102L
Abstract: MMBV3102LT1 sot diode marking 303
Text: SILICON EPICAP DIODE MMBV3102LT1 . . d e sign e d in the Surface M o u n t package for general freq u en cy control and tun ing applications; p ro vid in g solid-state reliability in replacem ent of m echanical tun ing m ethods. CASE 318-07, STYLE 8 SOT-23 TO-236AB
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MMBV3102LT1
OT-23
O-236AB)
MMBV3102L
MMBV3102LT1
sot diode marking 303
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Untitled
Abstract: No abstract text available
Text: JAN, JANTX, JANTXV,4N22, 4N23, 4N24 OPTOCOUPLERS mu O P T O E LE C TR O N IC PRODUCTS D IV IS IO N A V A ILA B LE T H R O U G H DISTRIBUTION FEATURES: • Base lead provided for conventional transistor biasing • Overall current gain.1.5 typical 4N24
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PH0810-15
Abstract: No abstract text available
Text: m an A M P com pany Wireless Bipolar Power Transistor, 15W 850 - 960 MHz PH0810-15 V2.00 .975 <2 4 .77 " Features • • • • • .725 <18.42)"" D esigned for l.i n e a r A m plifier A pplications Class AB: -30dBc Typ 3rd 1MD at 15 W atts PHP C o m m o n K m itter C onfiguration
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-30dBc
PH0810-15
PH0810-15
10T/NO.
1N4245)
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2SK790
Abstract: HSO16 2SK79 1SV35
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS
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TDT725G
300uA
EGA-2SK790-A
EGA-2SK790-5
2SK790
HSO16
2SK79
1SV35
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ch7j
Abstract: L238B
Text: PLE SS EY SEMICONDUCTORS 1 2E A PLESSEY W S em icon d u ctors 7250513 D 000^330 5 . T-T 7-Cn-05 M L238B 8-CHANNEL TOUCH CONTROL INTERFACE The ML238B is an eight channel sense circuit designed specifically for touch tuning in colour and monochrome television receivers. Using low threshold P-MOS technology,
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L238B
ML238B
7-Cn-05
-t-30V
ch7j
L238B
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics
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PHP65N06LT,
PHB65N06LT
T0220AB)
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Untitled
Abstract: No abstract text available
Text: JAN-, JANTX-, JANTXV- 4N22A, 4N23A, 4N24A OPTOCOUPLERS mu O P T O E L E C T R O N IC P R O D U C T S DIVISION A V A IL A B L E T H R O U G H D IS T R IB U T IO N FEATU RES: The collector Is electrically Isolated from the case on the 4N22A, 4N23A, and 4N24A only.
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4N22A,
4N23A,
4N24A
4N24A
4N24A)
4N22A
4N23A
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Diode lt 725
Abstract: P6020P
Text: Sept mber 1997 s e m ic d n d u c t o r NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,
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NDP6020P
NDB6020P
P6020P
Diode lt 725
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1BH62
Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Text: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage
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D00aa4D
1S1835
1S1834
100ns
1BH62
DIODE 1BH62
IS1835
1JH62
1DH62
1GH62
1JH62 3-3b1a
DIODE 39c
1S1835
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Untitled
Abstract: No abstract text available
Text: /Twm _ TECHNOLOGY LT1170/LT1171 /LT1172 ] ooicHz, 5A, 2.5A a n d 1.25A High Efficiency Switching Regulators F€OTUft€S DCSCMPTIOn • Wide Input Voltage Range: 3V to 60V ■ Low Quiescent Current: 6mA ■ Internal 5A Switch 2.5A for LT1171,1.25A forLH 172
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LT1170/LT1171
/LT1172
LT1172
/LT1172
CmTA11
S51fi4bfl
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