Untitled
Abstract: No abstract text available
Text: STK850 N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK STripFET™III MOSFET General features Type VDSS RDS on RDS(on)*Q g PTOT STK850 30V <0.0029Ω 58.8 nC*mΩ 5.2W • ULTRA LOW TOP AND BOTTOM JUNCTION TO CASE THERMAL RESISTANCE ■ VERY LOW CAPACITANCES
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STK850
2002/95/EC
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LTV817
Abstract: mark code t4 diode TB 1275 N DATA SHEET LTV817 photocoupler LTV817M-V LTV817S-V LTV817-V LTV827-V pc 817 LTV-817
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-817 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV817-V : 1-channel type / LTV827-V : 2-channel type /
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LTV-817
LTV817-V
LTV827-V
LTV847-V
LTV817M-V
LTV827M-V
LTV847M-V
LTV817S-V
LTV827S-V
LTV847S-V
LTV817
mark code t4 diode
TB 1275 N DATA SHEET
LTV817 photocoupler
LTV817M-V
LTV817S-V
LTV817-V
LTV827-V
pc 817
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LTV846S
Abstract: LTV846-V LTV-816 b 816 4pin 826m LTV816S LTV816S-V LTV826S-V LTV846 mark code t4 diode
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-816 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV816-V : 1-channel type / LTV826-V : 2-channel type /
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LTV-816
LTV816-V
LTV826-V
LTV846-V
LTV816M-V
LTV826M-V
LTV846M-V
LTV816S-V
LTV826S-V
LTV846S-V
LTV846S
LTV846-V
b 816 4pin
826m
LTV816S
LTV816S-V
LTV826S-V
LTV846
mark code t4 diode
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PC 814 photocoupler
Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
Text: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /
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LTV-814
LTV814-V
LTV824-V
LTV844-V
LTV814M-V
LTV824M-V
LTV844M-V
LTV814S-V
LTV824S-V
LTV844S-V
PC 814 photocoupler
LTV824-V
Lite-On LTV814
LTV814-V
LTV824STA1-V
mark code t4 diode
LTV814STA1-V
LTV814S-V
LTV824M-V
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PC123 VDE
Abstract: PC 123 photocoupler PC123 PC123 pin out PC123A PC123B PC123C PC123S PC123Y PC123Y5
Text: PREPARED BY: \ &&-‘/,L DATE: .%’2 , - :-, <’ ‘. h 4/ APPROVED - ,. BY: DATE: I- 1 -. ,dC, SHARP ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPEC. No. ED-94040E ISSUE March 5, 1998 PAGE 14 Pages REPRESENTAm A 1 lUi\1 I DMSION OPTO-ELECTRONIC DEVICES Dn!
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ED-94040E
PC123
852VJ
71OVl
PC123 VDE
PC 123 photocoupler
PC123
PC123 pin out
PC123A
PC123B
PC123C
PC123S
PC123Y
PC123Y5
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LD128DN
Abstract: schematic diagram Electronic Ballast STLD128DNT4 stld128dn ld128 JESD97 STLD128DN-1 TRANSISTOR T4 ST
Text: STLD128DN High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Large RBSOA ■ Through hole TO-251 IPAK power package in
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STLD128DN
O-251
O-252
LD128DN
schematic diagram Electronic Ballast
STLD128DNT4
stld128dn
ld128
JESD97
STLD128DN-1
TRANSISTOR T4 ST
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transistor MARKING K4
Abstract: No abstract text available
Text: STK850 N-CHANNEL 30V - 0.0024 Ω - 30A - PolarPAK STripFET™ Power MOSFET General features Type VDSS RDS on RDS(on)*Q g PTOT STK850 30V <0.0029Ω 58.8 nC*mΩ 5.2W • ULTRA LOW TOP AND BOTTOM JUNCTION TO CASE THERMAL RESISTANCE ■ VERY LOW CAPACITANCES
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STK850
2002/95/EC
transistor MARKING K4
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MJD122
Abstract: JESD97 MJD122-1 MJD122T4 MJD127
Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)
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MJD122
O-251
O-252
MJD127.
MJD122T4also
MJD122
JESD97
MJD122-1
MJD122T4
MJD127
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W
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BBY66.
BBY66-05
BBY66-05W
BBY66-05W*
OT323
Jun-29-2004
Infineon Technologies Silicon Tuning Diode
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Untitled
Abstract: No abstract text available
Text: STK850 N-CHANNEL 30V - 0.0029 Ω - 30A - PolarPAK STripFET™ MOSFET PRELIMINARY DATA Package General features Type VDSS STK850 30 V RDS on RDS(on)*Q g <0.0035 Ω 85.75 nC*mΩ PTOT 5.2 W • TYPICAL RDS(on) = 0.0029 Ω ■ ULTRA LOW TOP AND BOTTOM JUNCTION
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STK850
2002/95/EC
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MJD122
Abstract: ST DARLINGTON TRANSISTOR Date Code Marking STMicroelectronics PACKAGE DPAK JESD97 MJD122-1 MJD122T4 MJD127 ST T4 0
Text: MJD122 Low voltage power Darlington transistor Features • Low base drive requirements ■ Integrated antiparallel collector-emitter diode ■ Through hole TO-251 IPAK power package in tube (suffix “-1”) ■ Surface mounting TO-252 (DPAK) power package in tape & reel (suffix “T4”)
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MJD122
O-251
O-252
MJD127.
MJD122T4n
MJD122
ST DARLINGTON TRANSISTOR
Date Code Marking STMicroelectronics PACKAGE DPAK
JESD97
MJD122-1
MJD122T4
MJD127
ST T4 0
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Untitled
Abstract: No abstract text available
Text: STK800 N-CHANNEL 30V - 0.006 Ω - 20A - PolarPAK STripFET™ MOSFET PRELIMINARY DATA General features Type VDSS STK800 30 V RDS on Package RDS(on)*Qg <0.007 Ω 100.5 nC*mΩ PTOT 5.2 W • TYPICAL RDS(on) = 0.006 Ω ■ ULTRA LOW TOP AND BOTTOM JUNCTION
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STK800
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 80.4nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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BBY66
Abstract: BBY66-05 BBY66-05W BCR108W BCW66 E6327
Text: BBY66. Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread BBY66-05 BBY66-05W
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BBY66.
BBY66-05
BBY66-05W
BBY66-05W*
OT323
BBY66
BBY66-05
BBY66-05W
BCR108W
BCW66
E6327
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STK800
Abstract: STK850 JESD97 K850
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK850
STK800
2002/95/EC
STK800
STK850
JESD97
K850
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STK80
Abstract: JESD97 K850 STK800 STK850
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK850
STK800
2002/95/EC
STK80
JESD97
K850
STK800
STK850
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Untitled
Abstract: No abstract text available
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK850
STK800
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested
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STK800
2002/95/EC
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K800
Abstract: JESD97 STK800
Text: STK800 N-channel 30V - 0.006Ω - 20A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0078Ω 100.5nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK800
2002/95/EC
K800
JESD97
STK800
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Untitled
Abstract: No abstract text available
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK850
STK800
2002/95/EC
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Untitled
Abstract: No abstract text available
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A made by FUJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode sha11 be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
ESJA53-f
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PC410L
Abstract: PC410LENIP mark code t4 X3 diode PC410LEN E64380 transistor uxr phototransistor TIL 51 5911UG uxr transistor
Text: SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATIONFOR PHOTOCOUPLER. MODEL No. PC410L o Business dealing name PC410LENIP Business dealing name PC410LEYIP Specified for Enclosed please find copies of the Specifications which consists of 15 pages including cover.
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PC410L
PC410LENIP
PC410LEYIP
PC410hen
PC410LEY1P
PC410L
PC410LENIP
mark code t4 X3 diode
PC410LEN
E64380
transistor uxr
phototransistor TIL 51
5911UG
uxr transistor
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CB417
Abstract: LVT3V3 sod6 cmos 3v3 SMLVT3V3 transil diode Transil
Text: LVT3V3 SMLVT3V3 /= T SGS-THOMSON * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -
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10/1000ns
8/20ps
CB417
LVT3V3
sod6
cmos 3v3
SMLVT3V3
transil diode
Transil
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