marking CG
Abstract: No abstract text available
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable
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BAS70-04LT1
marking CG
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diode MARKING CODE CG
Abstract: diode cg sot-23 318 MARKING MARKING CG sot23 Diodes MARKING CG SOT-23 power sot-23 Marking cg 04LT1 CG SOT23
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS70-04LT1
diode MARKING CODE CG
diode cg sot-23
318 MARKING
MARKING CG sot23
Diodes MARKING CG SOT-23
power sot-23 Marking cg
04LT1
CG SOT23
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BAS70-04LT1
Abstract: BAS70-04LT1G
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS70-04LT1
BAS70-04LT1
BAS70-04LT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS70-04LT1
OT-23
O-236AB)
BAS70-04LT1/D
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BAS70-04LT1
Abstract: BAS70-04LT1G 318 MARKING
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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Original
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BAS70-04LT1
BAS70-04LT1/D
BAS70-04LT1
BAS70-04LT1G
318 MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAS70-04LT1G
BAS70â
04LT1/D
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM110P04-04L Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0040 RDS(on) () at VGS = - 4.5 V 0.0060 ID (A) - 120
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SQM110P04-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110P04-04L-GE3
18-Jul-08
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67047
Abstract: SQM120P04-04L
Text: SQM120P04-04L Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) () at VGS = - 10 V 0.0040 RDS(on) () at VGS = - 4.5 V 0.0060 ID (A) - 120
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Original
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SQM120P04-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM120P04-04L-GE3
18-Jul-08
67047
SQM120P04-04L
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS70-04LT1G,
SBAS70-04LT1G
AEC-Q101
BAS70-04LT1/D
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PDF
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SQM110P04
Abstract: No abstract text available
Text: SQM110P04-04L Vishay Siliconix Automotive P-Channel - 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = 10 V 0.0038 RDS(on) (Ω) at VGS = 4.5 V 0.0060 ID (A) • TrenchFET Power MOSFET
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SQM110P04-04L
AEC-Q101
2002/95/EC
O-263
SQM110P04-04L-GE3
18-Jul-08
SQM110P04
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM120N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET
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SQM120N06-04L
2002/95/EC
AEC-Q101
O-263
O-263
SQM120N06-04L-GE3
18-Jul-08
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PDF
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SQM110N06-04L
Abstract: SQM110N06
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.0035 RDS(on) (Ω) at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET
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Original
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SQM110N06-04L
2002/95/EC
AEC-Q101
O-263
SQM110N06-04L-GE3
18-Jul-08
SQM110N06-04L
SQM110N06
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS40-04LT1
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BAS70
Abstract: BAS70-04LT1G
Text: BAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where
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BAS70-04LT1G
BAS70-04LT1/D
BAS70
BAS70-04LT1G
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SQM110N06
Abstract: No abstract text available
Text: SQM110N06-04L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0050 ID (A) • TrenchFET Power MOSFET
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Original
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SQM110N06-04L
AEC-Q101
2002/95/EC
O-263
O-263
SQM110N06-04L-GE3
18-Jul-08
SQM110N06
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PDF
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Untitled
Abstract: No abstract text available
Text: DT1140-04LP ADVANCE INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data • Clamping Voltage:9V at 10A 100ns TLP; 9V at 6A 8 s/20μs IEC 61000-4-2 ESD : Air – +20/-18kV, Contact – +20/-16kV IEC 61000-4-5 (Lightning): ±6A (8/20µs)
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DT1140-04LP
100ns
20/-18kV,
20/-16kV
J-STD-020
MIL-STD-202,
DS36293
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Untitled
Abstract: No abstract text available
Text: DT1240-04LP ADVANCED ADVANCE INFORMATION INFORMATIO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features & Applications Mechanical Data • Clamping Voltage: 9V at 10A 100ns, TLP 9.4V at 5.5A 8 s/20μs
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DT1240-04LP
100ns,
DS36312
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marking 04L sot23
Abstract: sot23 04l BAS40-04L BAS40-04LT1 04L sot23 marking 04L to236AB marking cb bas40
Text: BAS40-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount
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BAS40-04LT1
marking 04L sot23
sot23 04l
BAS40-04L
BAS40-04LT1
04L sot23
marking 04L to236AB
marking cb bas40
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fr 2193
Abstract: No abstract text available
Text: SQD50N02-04L Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd
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SQD50N02-04L
AEC-Q101
2002/95/EC
O-252
O-252
SQD50N02-04L-GE3
18-Jul-08
fr 2193
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PDF
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SUM110N06-04L
Abstract: No abstract text available
Text: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*
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SUM110N06-04L
O-263
08-Apr-05
SUM110N06-04L
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SUM110N06-04L
Abstract: s300-50
Text: SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0035 at VGS = 10 V 0.005 at VGS = 4.5 V • TrenchFET Power MOSFETS • New Low Thermal Resistance Package ID (A) 110 Available RoHS*
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SUM110N06-04L
O-263
18-Jul-08
SUM110N06-04L
s300-50
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PDF
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SUM110P04-04L
Abstract: VOLTAGE-1000
Text: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance
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Original
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SUM110P04-04L
O-263
18-Jul-08
SUM110P04-04L
VOLTAGE-1000
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PDF
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72437
Abstract: No abstract text available
Text: SUM110P04-04L Vishay Siliconix P-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET Power MOSFET • New Package with Low Thermal Resistance
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Original
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SUM110P04-04L
O-263
SUM110P04-04L
08-Apr-05
72437
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PDF
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04LT1
Abstract: BAS70 BAS70-04LT1
Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable
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Original
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BAS70-04LT1
236AB)
r14525
BAS70
04LT1/D
04LT1
BAS70-04LT1
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PDF
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