Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43 • BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY DIODE SOT-23 FEATURES z Low forward voltage z Fast switching BAS40 MARKING:43h BAS40-04 MARKING: 44 BAS40-05 MARKING: 45 BAS40-06 MARKING: 46 Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage
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OT-23
BAS40/-04/-05/-06
OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage
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OT-23
BAS40
BAS40-04
BAS40-05
BAS40-06
037TPY
950TPY
550REF
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DIODE SCHOTTKY 30V 200MA SOT23
Abstract: BAS40 BAS40-04 BAS40-05 BAS40-06 BAS40LT1
Text: BAS40LT1 SCHOTTKY DIODE Features Power dissipation 。 P D : 200 mW Tamb=25 C Pluse Drain I F : 200 mA Reverse Voltage V R : 40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C + SOT-23 3 1 2 1. 0.4 0.95 BAS40-04 Marking:44
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BAS40LT1
OT-23
BAS40-04
BAS40
BAS40-05
BAS40-06
100mA
200mA
DIODE SCHOTTKY 30V 200MA SOT23
BAS40LT1
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BAW56
Abstract: cd 5411
Text: BAW56 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • Silicon planar high-speed switching series diode pair. Package Outline Details Pin Configuration 1. Cathode k1 2. Cathode (k2) 3. Anode (a) Dimensions : Millimetres
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BAW56
BAW56
cd 5411
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smd 662 sot23
Abstract: DIODE smd marking A4 smd sot23 A4 smd diode A4 BAV70 358 SOT23 smd 7333 A
Text: BAV70 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • High speed switching diode pair, common cathode. SOT-23 Formed SMD Package Package Outline Details Pin Configuration 1. Anode a1 2. Anode (a2) 3. Cathode (k)
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BAV70
OT-23
smd 662 sot23
DIODE smd marking A4
smd sot23 A4
smd diode A4
BAV70
358 SOT23
smd 7333 A
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Untitled
Abstract: No abstract text available
Text: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV31XN
O-236AB)
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dab radio circuit
Abstract: construction of varactor diode dab radio varactor diode capacitance measurement Dual Varactor Diode with Common Cathode FSD271TA varactor diode pcb design varactor diode notes varactor diode q factor measurement top marking c2 sot23
Text: ZDC834A SILICON DUAL VARIABLE CAPACITANCE DIODE SUMMARY VBR=25V; IR=20nA; Cd=47pF Nom DESCRIPTION The ZDC834A is a new hyperabrupt SOT23 packaged dual common cathode varactor diode , offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance
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ZDC834A
ZDC834A
FEATUR631)
dab radio circuit
construction of varactor diode
dab radio
varactor diode capacitance measurement
Dual Varactor Diode with Common Cathode
FSD271TA
varactor diode pcb design
varactor diode notes
varactor diode q factor measurement
top marking c2 sot23
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T1 SOT23-6
Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
T1 SOT23-6
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
marking e1 diode
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ZHCS2000
Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZHCS2000
Schottky Diode 40V 2A
ZHCS2000TA
ZHCS2000TC
DSA003728
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ZS20
Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZS20
ZS20 SOT23 MARKING
T2 MARKING SOT23-6
ZHCS2000
ZHCS2000TA
ZHCS2000TC
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L05 diode
Abstract: ZHCS500 ZLLS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low forward
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ZLLS500
ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC LL-20 DIODE SCHOTTKY 40V 500MA marking ll20
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
LL-20
DIODE SCHOTTKY 40V 500MA
marking ll20
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ZHCS2000
Abstract: ZLLS2000 ZLLS2000TA ZLLS2000TC DIODE SCHOTTKY 40V 500MA 2222 diode
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
ZHCS2000
ZLLS2000
ZLLS2000TA
ZLLS2000TC
DIODE SCHOTTKY 40V 500MA
2222 diode
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L05 diode
Abstract: ZLLS500 MARKING L05 ZHCS500 ZLLS500TA ZLLS500TC
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
ZLLS500
L05 diode
MARKING L05
ZHCS500
ZLLS500TA
ZLLS500TC
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L05 diode
Abstract: ZLLS500 ZHCS500 ZLLS500TA ZLLS500TC 8-NP
Text: ZLLS500 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.7A; IR = 10 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS500
L05 diode
ZHCS500
ZLLS500TA
ZLLS500TC
8-NP
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Schottky Diode 40V 2A
Abstract: marking ma sot23-6 ZHCS2000 320 sot236 ZLLS1000TA ZLLS1000TC ZLLS2000 marking L10
Text: ZLLS2000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 2.2A; IR = 40 A DESCRIPTION This compact SOT23-6 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage
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ZLLS2000
OT23-6
Schottky Diode 40V 2A
marking ma sot23-6
ZHCS2000
320 sot236
ZLLS1000TA
ZLLS1000TC
ZLLS2000
marking L10
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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Diode 20A/30v
Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
Diode 20A/30v
SCHOTTKY 20A 40V
Schottky Diode 40V 5A
ZHCS1000
ZLLS1000
ZLLS1000TA
ZLLS1000TC
IR-1120
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ZLLS1000
Abstract: Diode 20A/30v ZHCS1000 ZLLS1000TA ZLLS1000TC
Text: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low
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ZLLS1000
ZLLS1000
Diode 20A/30v
ZHCS1000
ZLLS1000TA
ZLLS1000TC
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smd code marking LF sot23
Abstract: smd diode marking A3 sot23
Text: Philips Semiconductors Product specification Schottky barrier double diodes BAS40 series PINNING SOT23 (see Fig. 1a) FEATURES • Low forward voltage DESCRIPTION • Guard ring protected PIN BAS40 (see Fig. 1b) BAS40-04 (see Fig. 1c) BAS40-05 (see Fig. 1d)
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BAS40
BAS40
BAS40-04
BAS40-05
BAS40-06
OT143B
T143B
smd code marking LF sot23
smd diode marking A3 sot23
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Untitled
Abstract: No abstract text available
Text: BB804 _ y\ _ VHF VARIABLE CAPACITANCE DOUBLE DIODE The BB804 is a variable capacitance double diode in planar technology w ith common cathode in a plastic SOT23 envelope. It is intended fo r FM tuning especially fo r car radios.
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BB804
BB804
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