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    DIODE MARKING C3 Search Results

    DIODE MARKING C3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    CD731

    Abstract: marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE CD731 SOT23 - 6L Formed SMD Package MARKING CD731 = C3S dot on pin 1 Schottky Barrier Diode (set of three) ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) - specification per diode


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    PDF CD731 C-120 CD731Rev 130804E CD731 marking 6l "SMD PACKAGE" smd diode So SMD PACKAGE INDIA

    chip Marking 3A3

    Abstract: Diode BGX50A BGX50A VPS05178
    Text: BGX50A Silicon Switching Diode Array 3  Bridge configuration  High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage


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    PDF BGX50A VPS05178 EHA00007 OT143 EHB00147 EHB00148 Jul-31-2001 EHB00149 chip Marking 3A3 Diode BGX50A BGX50A VPS05178

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Plastic-Encapsulate Diodes SOT-23 SOT-23 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast reverse recovery time z Small total capacitance 1 3 2 MARKING: C3 Maximum Ratings ,Single Diode @Ta=25℃


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    PDF OT-23 1SS226

    VPS05178

    Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
    Text: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 14-099R VPS05178 EHA07012 OT-143 EHD07089 EHD07090 Oct-07-1999 VPS05178 marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode

    A4 marking diode

    Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
    Text: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF 15-099R VPS05178 EHA07012 OT-143 EHD07077 EHD07078 Oct-07-1999 A4 marking diode VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R

    BAT62-08S

    Abstract: VPS05604
    Text: BAT62-08S Silicon Schottky Diode Array Preliminary data 4  Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604


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    PDF BAT62-08S OT-363 VPS05604 EHA07193 EHA07291 OT363 EHD07061 900MHz EHD07063 BAT62-08S VPS05604

    marking code 62 3 pin diode

    Abstract: No abstract text available
    Text: BAT 62-08S Silicon Schottky Diode Array Preliminary data 4 • Low barrier diode for detectors up to GHz 5 6 frequencies Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 2 1 3


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    PDF 62-08S OT-363 VPS05604 EHA07193 EHA07291 62-08S Q62702-A1343 OT-363 D07060 EHD07061 marking code 62 3 pin diode

    marking u1s SOT-143

    Abstract: VPS05178 chip Marking 3A3
    Text: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol


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    PDF VPS05178 EHA00007 OT-143 EHB00147 EHB00148 Oct-26-1999 EHB00149 marking u1s SOT-143 VPS05178 chip Marking 3A3

    4C3 diode

    Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
    Text: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3  Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R


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    PDF BAT15-099R VPS05178 EHA07012 OT143 EHD07077 15-099R Jul-31-2001 4C3 diode Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3

    Q62702-B0858

    Abstract: No abstract text available
    Text: BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment 1 VES05991 Type Marking Ordering Code Pin Configuration


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    PDF 1-02W VES05991 Q62702-B0858 SCD-80 Jul-23-1998 EHD07128 Q62702-B0858

    Q62702-B663

    Abstract: diode marking 20
    Text: BBY 51-03W Silicon Tuning Diode l High Q hyperabrupt tuning diode l Designed for low tuning voltage operation l For VCO's in mobile communications equipment Type Marking Ordering Code tape and reel Pin Configuration Package 1 2 BBY 51-03W H Q62702-B663 C1


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    PDF 1-03W Q62702-B663 OD-323 Q62702-B663 diode marking 20

    BBY51-03W

    Abstract: No abstract text available
    Text: BBY51-03W Silicon Tuning Diode 2  High Q hyperabrupt tuning diode 1  Designed for low tuning voltage operation  For VCO's in mobile communications equipment VPS05176 Type Marking Pin Configuration Package BBY51-03W H 1=C SOD323 2=A Maximum Ratings Parameter


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    PDF BBY51-03W VPS05176 OD323 Jul-04-2001 EHD07128 EHD07129 BBY51-03W

    Untitled

    Abstract: No abstract text available
    Text: BBY 51-02W Silicon Tuning Diode • High Q hyperabrupt tuning diode • Low series inductance 2 • Designed for low tuning voltage operation • For VCO's in mobile communications equipment 1 VES05991 Type Marking Pin Configuration Package BBY 51-02W I 1=C


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    PDF 1-02W VES05991 SCD-80 Oct-05-1999 EHD07128 EHD07129

    VPS05604

    Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
    Text: BAT 18-04S Silicon PIN Diode Preliminary data 4 5  Low-loss VHF / UHF switch above 10 MHz 6  PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package


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    PDF 18-04S VPS05604 EHA07464 OT-363 100MHz EHD07019 EHD07020 Dec-16-1999 VPS05604 DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3

    s3s sot23

    Abstract: BBY51
    Text: BBY51 Silicon Tuning Diode 3  High Q hyperabrupt dual tuning diode  Designed for low tuning voltage operation  For VCO's in mobile communications equipment 2 1 Type Marking BBY51 S3s Pin Configuration 1 = A1 2 = A2 VPS05161 Package 3 = C1/2 SOT23 Maximum Ratings


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    PDF BBY51 VPS05161 Aug-08-2001 EHD07128 s3s sot23 BBY51

    Q62702B

    Abstract: marking 34 diode
    Text: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration


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    PDF 1-02W Q62702-B0858 SCD-80 Q62702B marking 34 diode

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BBY51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Ordering Code Pin Configuration BBY51 S3 Q62702-B631 1=A Package < Marking II CM Type


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    PDF BBY51 Q62702-B631 OT-23 fl235bOS 23Sb05

    rs 434 065

    Abstract: 434 diode
    Text: SIEMENS BBY 51 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Pin Configuration Package < Q62702-B631 II CM Ordering Code S3 I! Marking BBY 51 < Type


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    PDF Q62702-B631 OT-23 rs 434 065 434 diode

    S 437 Diode

    Abstract: No abstract text available
    Text: SIE M E N S BBY 51-03W Silicon Tuning Diode • • • High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment Type Marking Ordering Code tape and reel Pin Configuration Package 1) BBY 51-03W


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    PDF 1-03W Q62702-B663 OD-323 1-03W S 437 Diode

    Q62702-B0832

    Abstract: Diode 442 marking VB DIODE
    Text: SIEMENS BBY 51-07 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY 51-07 HHs Q62702-B0832 1 =C1 Od Pin Configuration II Ordering Code O Marking


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    PDF Q62702-B0832 OT-143 Q62702-B0832 Diode 442 marking VB DIODE